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IXTU12N06T

型号：

IXTU12N06T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

157 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 60V  
ID25 = 12A  
RDS(on) ≤ 85mΩ  
IXTU12N06T  
IXTY12N06T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-251 (IXTU)  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
60  
60  
V
V
D (TAB)  
S
TO-252 (IXTY)  
G
VGSM  
Transient  
±20  
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
Package Current Limit, RMS TO-252  
12  
30  
25  
A
A
A
ILRMS  
IAR  
TC = 25°C  
TC = 25°C  
3
A
S
EAS  
20  
mJ  
D (TAB)  
PD  
TC = 25°C  
33  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
TSOLD  
z Ultra-low On Resistance  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Md  
Mounting torque  
1.13/10  
Nm/lb.in.  
Weight  
TO-251  
TO-252  
0.40  
0.35  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 25μA  
VGS = ± 20V, VDS = 0V  
60  
V
V
Applications  
2.0  
4.0  
z
Automotive  
± 50 nA  
μA  
100 μA  
- Motor Drives  
- 42V Power Bus  
IDSS  
VDS = VDSS  
VGS = 0V  
1
- ABS Systems  
TJ = 150°C  
z
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
85 mΩ  
z
Systems  
High Current Switching  
z
Applications  
DS99947(4/08)  
2008 IXYS CORPORATION All rights reserved  
IXTU12N06T  
IXTY12N06T  
Symbol  
Test Conditions  
Characteristic Values  
TO-251 (IXTU) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Notes 1  
VGS = 0V, VDS = 25V, f = 1MHz  
2.9  
4.7  
S
Ciss  
Coss  
Crss  
256  
46  
pF  
pF  
pF  
10.4  
td(on)  
tr  
td(off)  
tf  
12  
29  
29  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 6A  
RG = 50Ω (External)  
Qg(on)  
Qgs  
Qgd  
3.4  
1.0  
0.9  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A  
1. Gate  
3. Source  
2.Drain  
4. Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
RthJC  
4.5 °C/W  
Min.  
Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
.086  
0.35  
.094  
.045  
b
b1  
b2  
0.64  
0.76  
5.21  
0.89  
1.14  
5.46  
.025  
.030  
.205  
.035  
.045  
.215  
Source-Drain Diode  
Characteristic Values  
c
c1  
0.46  
0.46  
0.58  
0.58  
.018  
.018  
.023  
.023  
Symbol  
Test Conditions  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
12  
D
5.97  
6.22  
.235  
.250  
.090 BSC  
.180 BSC  
.245  
.265  
E
e
e1  
6.35  
2.28  
4.57  
6.73  
BSC  
BSC  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 6A, VGS = 0V, Note 1  
48  
H
17.02  
17.78  
.670  
.700  
L
L1  
L2  
8.89  
1.91  
0.89  
9.65  
2.28  
1.27  
.350  
.075  
.035  
.380  
.090  
.050  
1.2  
IF = 6A, VGS = 0V, -di/dt = 100A/μs  
VR = 30V  
trr  
30  
ns  
A
TO-252 (IXTY) Outline  
IRM  
1.34  
Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
0.64 0.89  
0.025  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
PRELIMINARY TECHNICAL INFORMATION  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTU12N06T  
IXTY12N06T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
12  
11  
10  
9
32  
28  
24  
20  
16  
12  
8
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8
8V  
7V  
7V  
7
6
6V  
5V  
5
4
6V  
5V  
3
2
4
1
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
2
4
6
8
10  
12  
14  
16  
18  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 6A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
12  
11  
10  
9
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
VGS = 10V  
9V  
8V  
I D = 12A  
8
7V  
7
I D = 6A  
6
6V  
5V  
5
4
3
2
1
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 6A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
13  
12  
11  
10  
9
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 175ºC  
15V  
- - - -  
8
7
6
5
4
3
2
TJ = 25ºC  
1
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
ID - Amperes  
TC - Degrees Centigrade  
2008 IXYS CORPORATION All rights reserved  
IXTU12N06T  
IXTY12N06T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
10  
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
0
1
2
3
4
5
6
7
8
9
10  
3.5  
1
3.0  
0.4  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
VDS = 30V  
I D = 6A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
0.5  
1
1.5  
2
2.5  
3
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1,000  
10.0  
C
iss  
100  
10  
1
1.0  
C
C
oss  
rss  
= 1 MHz  
5
f
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
10  
15  
20  
25  
30  
35  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Second  
IXTU12N06T  
IXTY12N06T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
RG = 50Ω  
VGS = 10V  
VDS = 30V  
TJ = 25ºC  
RG = 50Ω  
VGS = 10V  
DS = 30V  
V
I D = 12A  
I D = 6A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
6
7
8
9
10  
11  
12  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
32  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
22  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
tf  
t d(off) - - - -  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
tr  
td(on) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 30V  
RG = 50Ω, VGS = 10V  
21  
20  
19  
18  
17  
VDS = 30V  
I D = 6A  
I D = 12A  
I D = 6A  
I D = 6A, 12A  
I D = 12A  
50  
60  
70  
80  
90  
100  
110  
120  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
45  
40  
35  
30  
25  
20  
15  
10  
44  
40  
36  
32  
28  
24  
20  
16  
21  
20  
19  
18  
17  
32  
30  
28  
26  
24  
22  
20  
18  
16  
t f  
TJ = 125ºC, VGS = 10V  
t
d(off) - - - -  
VDS = 30V  
I D = 6A  
TJ = 25ºC  
TJ = 125ºC  
t f  
RG = 50Ω, VGS = 10V  
t
d(off) - - - -  
I D = 12A  
VDS = 30V  
50  
60  
70  
80  
90  
100  
110  
120  
6
7
8
9
10  
11  
12  
RG - Ohms  
ID - Amperes  
2008 IXYS CORPORATION All rights reserved  
IXYS REF: T_12N06T(U1) 4-03-08-A  
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