IXTU05N100
IXTY05N100
Symbol
Test Conditions
Characteristic Values
TO-251Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 500mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.55
0.93
S
Ciss
Coss
Crss
260
22
8
pF
pF
pF
td(on)
tr
td(off)
tf
11
19
40
28
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47 (External)
1. Gate
3. Source
2.Drain
4.Drain
Qg(on)
Qgs
7.8
1.4
4.1
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
Qgd
A
A1
2.19
0.89
2.38
1.14
.086
0.35
.094
.045
RthJC
3.1C/W
b
b1
b2
0.64
0.76
5.21
0.89
1.14
5.46
.025
.030
.205
.035
.045
.215
c
c1
0.46
0.46
0.58
0.58
.018
.018
.023
.023
D
5.97
6.22
.235
.250
.090 BSC
.180 BSC
.245
.265
E
e
e1
6.35
2.28
4.57
6.73
BSC
BSC
Source-Drain Diode
H
17.02
17.78
.670
.700
Symbol
Test Conditions
Characteristic Values
L
L1
L2
8.89
1.91
0.89
9.65
2.28
1.27
.350
.075
.035
.380
.090
.050
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
750 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
3
A
V
TO-252 AA Outline
1.5
A
E
b3
c2
L3
4
IF = IS, -di/dt = 100A/s
710
ns
VR = 100V, VGS = 0V
A1
H
A2
L4
1
2
3
L1
b2
L
c
1 - Gate
2,4 - Drain
3 - Source
e
e1
L2
e1
0
5.55MIN
OPTIONAL
6.50MIN
4
Note 1: Pulse test, t 300s, duty cycle, d 2%.
6.40
2.28
2.85MIN
1.25MIN
BOTTOM
VIEW
LAND PATTERN RECOMMENDATION
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
