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IXTQ69N30PM

型号：

IXTQ69N30PM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

143 K

下载PDF手册
Advance Technical Information  
PolarTM  
Power MOSFET  
VDSS = 300V  
ID25 = 25A  
RDS(on) ≤ 49mΩ  
IXTQ69N30PM  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED  
(IXTQ...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
300  
300  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
25  
200  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
69  
1.5  
A
J
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
15  
90  
V/ns  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
ꢀPlastic Overmolded Tab for Electrical  
Isolation  
ꢀAvalanche Rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10 s  
Plastic Body for 10 s  
300  
260  
°C  
°C  
ꢀFast Intrinsic Diode  
ꢀLow Package Inductance  
Md  
Mounting Torque  
1.13/10  
2.5  
Nm/lb.in.  
g
Weight  
Advantages  
ꢀHigh Power Density  
ꢀEasy to Mount  
ꢀSpace Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
V
V
ꢀSwitch-Mode and Resonant-Mode  
Power Supplies  
5.0  
IGSS  
IDSS  
VGS = ±20V, VDS = 0V  
±100 nA  
ꢀDC-DC Converters  
ꢀLaser Drivers  
VDS = VDSS, VGS= 0V  
5 μA  
100 μA  
ꢀAC and DC Motor Drives  
ꢀRobotics and Servo Controls  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 34.5A, Note 1  
49 mΩ  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100204(10/09)  
IXTQ69N30PM  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED (IXTQ...M) OUTLINE  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 34.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
27  
45  
S
Ciss  
Coss  
Crss  
4960  
760  
pF  
pF  
pF  
190  
td(on)  
tr  
td(off)  
tf  
25  
25  
75  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5  
ꢀ
VDSS, ID = 34.5A  
RG = 4Ω (External)  
Qg(on)  
Qgs  
156  
32  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 34.5A  
Qgd  
79  
RthJC  
1.38 °C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
69  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
270  
1.5  
trr  
QRM  
IF = 25A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
250  
3.0  
ns  
μC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTQ69N30PM  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
9V  
8V  
7V  
7V  
6V  
60  
6V  
5V  
40  
5V  
20  
0
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 34.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
7V  
6V  
I D = 69A  
I D = 34.5A  
5V  
1
2
3
4
5
6
7
8
9
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 34.5A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
28  
24  
20  
16  
12  
8
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
20  
40  
60  
80  
100  
120  
140  
160  
180  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTQ69N30PM  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
200  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 150V  
I D = 34.5A  
I
G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
10ms  
100ms  
T
= 1 MHz  
5
f
DC  
rss  
0.1  
0
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTQ69N30PM  
Fig. 13. Maximum Transient Thermal Impedance  
10.000  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_69N30P(7S)10-16-09-A  
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