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IXTU1N80P

型号：

IXTU1N80P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

161 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power  
MOSFET  
VDSS = 800V  
ID25 = 1A  
RDS(on) ≤ 14Ω  
IXTA1N80P  
IXTP1N80P  
IXTU1N80P  
IXTY1N80P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
TO-220 (IXTP)  
TO-251 (IXTU)  
G
G
D
S
)  
(TAB)  
S
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-252 (IXTY)  
TJ = 25°C to 150°C  
800  
800  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1
2
A
A
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
1
75  
A
mJ  
Features  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
z International Standard Packages  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
42  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low Package Inductance  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
TSOLD  
z
Easy to Mount  
Space Savings  
High Power Density  
Md  
Mounting Torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
z
z
Weight  
TO-263  
TO-220  
TO-252  
TO-251  
2.50  
3.00  
0.35  
0.40  
g
g
g
g
Applications  
z Switched-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
800  
2.0  
Typ.  
Max.  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ±20V, VDS = 0V  
V
V
4.0  
±100 nA  
μA  
30 μA  
14  
IDSS  
VDS = VDSS  
VGS = 0V  
3
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
10  
Ω
DS100112(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA1N80P IXTP1N80P  
IXTU1N80P IXTY1N80P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
0.30  
0.55  
S
Ciss  
Coss  
Crss  
250  
22  
5.3  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
20  
18  
58  
42  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 50Ω (External)  
Qg(on)  
Qgs  
Qgd  
9.0  
1.4  
5.5  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RthJC  
RthCS  
3.0 °C/W  
°C/W  
(TO-220)  
0.50  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
1 A  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
4 A  
1.3 V  
ns  
IF = 1A, -di/dt = 100A/μs  
700  
VR = 100V, VGS = 0V  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA1N80P IXTP1N80P  
IXTU1N80P IXTY1N80P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
7V  
VGS = 10V  
I D = 1A  
6V  
5V  
I D = 0.5A  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA1N80P IXTP1N80P  
IXTU1N80P IXTY1N80P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VDS = 400V  
I D = 0.5A  
I G = 1mA  
TJ = 125ºC  
TJ = 25ºC  
0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90  
0
1
2
3
4
5
6
7
8
9
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1,000  
10.0  
= 1 MHz  
f
C
iss  
100  
10  
1
C
C
1.0  
oss  
rss  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_1N80P(1A)02-10-09-A  
IXTA1N80P IXTP1N80P  
IXTU1N80P IXTY1N80P  
TO-220 (IXTP) Outline  
TO-251 (IXTU) Outline  
1. Gate  
3. Source  
2.Drain  
4.Drain  
Pins: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
.086  
0.35  
.094  
.045  
b
b1  
b2  
0.64  
0.76  
5.21  
0.89  
1.14  
5.46  
.025  
.030  
.205  
.035  
.045  
.215  
c
c1  
0.46  
0.46  
0.58  
0.58  
.018  
.018  
.023  
.023  
D
5.97  
6.22  
.235  
.250  
.090 BSC  
.180 BSC  
.245  
.265  
E
e
e1  
6.35  
2.28  
4.57  
6.73  
BSC  
BSC  
H
17.02  
17.78  
.670  
.700  
L
L1  
L2  
8.89  
1.91  
0.89  
9.65  
2.28  
1.27  
.350  
.075  
.035  
.380  
.090  
.050  
TO-252 (IXTY) Outline  
TO-263 (IXTA) Outline  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Inches  
Dim.  
Millimeter  
Min. Max.  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
0.64 0.89  
0.025  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
© 2009 IXYS CORPORATION, All Rights Reserved  
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