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IXTT44N25L2HV

型号：

IXTT44N25L2HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

341 K

下载PDF手册
Advance Technical Information  
LinearL2TM  
Power MOSFET  
w/ Extended FBSOA  
VDSS = 250V  
ID25 = 44A  
RDS(on) 75m  
IXTT44N25L2HV  
IXTH44N25L2  
D
O
N-Channel Enhancement Mode  
RGi  
w
w
G
O
TO-268HV (IXTT..HV)  
O
S
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXTH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
44  
A
A
G
D
120  
S
D (Tab)  
D = Drain  
IA  
TC = 25C  
TC = 25C  
22  
3
A
J
EAS  
G = Gate  
S = Source  
Tab = Drain  
PD  
TC = 25C  
400  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
250  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
4.5  
Solid State Circuit Breakers  
Soft Start Controls  
Linear Amplifiers  
          100 nA  
IDSS  
10 A  
75 A  
Programmable Loads  
Current Regulators  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
75 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100920A (7/18)  
IXTT44N25L2HV  
IXTH44N25L2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
11  
18  
25  
S
Ciss  
Coss  
Crss  
5740  
820  
pF  
pF  
pF  
245  
RGi  
Integrated Gate Input Resistor  
3.3  
td(on)  
tr  
td(off)  
tf  
30  
78  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
110  
32  
RG = 0(External)  
Qg(on)  
Qgs  
256  
40  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
146  
RthJC  
RthCS  
0.31 °C/W  
°C/W  
TO-247  
0.21  
Safe Operating Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 250V, ID = 0.96A, TC = 75°C, Tp = 2s  
240  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
44  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.4  
V
trr  
QRM  
IRM  
366  
ns  
IF = 22A, -di/dt = 100A/μs  
4.9  C  
26.6  
VR = 100V  
A
Note 1: Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT44N25L2HV  
IXTH44N25L2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
180  
160  
140  
120  
100  
80  
V
= 20V  
10V  
V
= 20V  
GS  
GS  
13V  
12V  
9V  
8V  
11V  
10V  
9V  
7V  
60  
40  
8V  
6V  
5V  
20  
4
7V  
6V  
0
0
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 20V  
10V  
GS  
9V  
V
= 10V  
GS  
8V  
7V  
I
= 44A  
D
I
= 22A  
D
6V  
5V  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
V
GS(th)  
o
T
= 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTT44N25L2HV  
IXTH44N25L2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
o
T
J
= 125 C  
o
25 C  
o
- 40 C  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
o
T
J
= - 40 C, 25oC  
o
125 C  
o
T
J
= 125 C  
o
T = 25 C  
J
0
0
10  
20  
30  
40  
50  
60  
70  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10,000  
10  
9
8
7
6
5
4
3
2
1
0
V
= 125V  
DS  
I
I
= 22A  
D
G
C
iss  
= 10mA  
C
1,000  
oss  
= 1 MHz  
5
f
C
rss  
100  
0
40  
80  
120  
160  
200  
240  
280  
0
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTT44N25L2HV  
IXTH44N25L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1000  
100  
10  
1000  
100  
10  
R Limit  
DS( )  
on  
R
DS(  
on  
Limit  
)
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
o
o
1
1
T = 150 C  
J
T = 150 C  
J
o
o
T
C
= 25 C  
T
C
= 75 C  
Single Pulse  
Single Pulse  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_44N25L2 (7R-P27) 7-26-18  
IXTT44N25L2HV  
IXTH44N25L2  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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