SOT223 NPN SILICON PLANAR
FZTA14
DARLINGTON TRANSISTOR
ISSUE 3 JANUARY 1996
PARTMARKING DETAIL:-
DEVICE TYPE IN FULL
C
COMPLEMENTARY TYPE :- FZTA64
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Emitter Voltage
30
Collector-Base Voltage
30
V
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
10
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
1
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CES
30
V
IC=100µA, VBE=0
Collector Cut-Off
Current
ICBO
100
100
nA
nA
VCB=30V, IE=0
VEB=10V, IC=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
1.5
1.6
V
V
IC=100mA, IB=0.1mA*
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
2.0
V
IC=100mA, VCE=5V*
Base-Emitter
Saturation Voltage
VBE(sat)
2.0
2.2
V
V
IC=100mA, IB=0.1mA
IC=1A, IB=1mA
Static Forward Current hFE
Transfer Ratio
10K
20K
5K
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=1A, VCE=5V*
Transition Frequency
fT
170
MHz
IC=50mA, VCE=5V*
f=20MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
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