CYTA44D
SURFACE MOUNT
DUAL, ISOLATED
HIGH VOLTAGE
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYTA44D type
consists of two (2) isolated NPN high voltage silicon
transistors packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal for
high voltage applications.
NPN SILICON TRANSISTORS
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
450
400
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
6.0
V
Continuous Collector Current
Power Dissipation
I
300
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
500
100
UNITS
nA
nA
nA
V
I
I
I
V
V
V
=400V
=400V
=4.0V
CBO
CES
EBO
CB
CE
BE
BV
BV
BV
BV
I =100µA
450
450
400
6.0
CBO
CES
C
I =100µA
V
C
I =1.0mA
V
CEO
C
I =10µA
V
EBO
E
V
V
V
V
I =1.0mA, I =0.1mA
0.40
0.50
0.75
0.75
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
V
C
B
h
h
h
h
V
=10V, I =1.0mA
40
50
45
20
20
CE
CE
CE
CE
CE
CB
EB
C
V
V
V
V
V
V
=10V, I =10mA
200
FE
C
=10V, I =50mA
FE
C
=10V, I =100mA
FE
C
f
=10V, I =10mA, f=10MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
7.0
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
130
pF
C
R2 (23-February 2010)
