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IXTV230N085T

型号：

IXTV230N085T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

286 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 85  
ID25 = 230  
RDS(on) ≤ 4.4 mΩ  
V
A
IXTV230N085T  
IXTV230N085TS  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
PLUS220 (IXTV)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
85  
85  
V
V
VGSM  
Transient  
20  
V
G
D
D (TAB)  
S
ID25  
ILRMS  
IDM  
TC =25°C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
230  
75  
520  
A
A
A
PLUS220SMD (IXTV_S)  
IAR  
EAS  
TC =25°C  
TC =25°C  
40  
1.0  
A
J
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 3.3 Ω  
3
V/ns  
G
S
D (TAB)  
D = Drain  
TAB = Drain  
G = Gate  
S = Source  
TC =25°C  
550  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
FC  
Mounting force (PLUS220)  
11...65 /2.5...15  
3
N/lb.  
g
Weight  
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
85  
V
V
2.0  
4.0  
- 42V Power Bus  
- ABS Systems  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
Systems  
High Current Switching  
TJ = 150° C  
ꢀ
RDS(on)  
VGS = 10 V, ID = 50 A, Notes 1, 2  
3.7  
4.4 mΩ  
Applications  
DS99705(11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTV230N085T  
IXTV230N085TS  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
PLUS220 (IXTV) Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
75  
125  
S
Ciss  
Coss  
Crss  
9900  
1230  
286  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
32  
49  
56  
39  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A  
RG = 3.3 Ω (External)  
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
Qg(on)  
Qgs  
187  
51  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Qgd  
55  
RthJC  
RthCS  
0.27°C/W  
°C/W  
PLUS220  
0.25  
Source-Drain Diode  
Symbol  
Values  
Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic  
Min. Typ.  
Max.  
230  
520  
1.0  
IS  
VGS = 0 V  
A
A
PLUS220SMD (IXTV_S) Outline  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50 A, VGS = 0 V, Note 1  
V
IF = 50 A, -di/dt = 100 A/µs  
90  
ns  
VR = 25 V, VGS = 0 V  
Note 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location is 5 mm or less from the package body.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
5,049,961  
5,063,307  
5,034,796  
5,237,481  
5,381,025  
5,187,117  
6,162,665  
6,259,123B1 6,534,343  
5,486,715  
6,404,065B1 6,683,344  
6,710,405B2 6,759,692  
6,306,728B1 6,583,505  
6,727,585  
7,005,734B2 7,063,975B2  
7,063,975B2 7,071,537  
6,771,478B2 7,071,537  
one or moreof the following U.S. patents:  
4,850,072 5,017,508  
4,881,106  
6,710,463  
IXTV230N085T  
IXTV230N085TS  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
20  
5V  
0
0
0
1
2
3
4
5
6
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 115A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 230A  
D
I
= 115A  
D
60  
5V  
40  
20  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 115A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
T = 175ºC  
J
External Lead Current Limit  
- - - -  
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTV230N085T  
IXTV230N085TS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
240  
220  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
T
J
=150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20 40 60 80 100 120 140 160 180 200 220 240  
ID - Amperes  
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7  
VGS - Volts  
6
6.3 6.6  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 43V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
60  
30  
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXTV230N085T  
IXTV230N085TS  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
52  
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
52  
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
R
V
V
= 3.3  
Ω
G
= 10V  
GS  
DS  
T = 25ºC  
J
= 42.5V  
R
V
V
= 3.3  
Ω
G
= 10V  
GS  
DS  
= 42.5V  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
220  
200  
180  
160  
140  
120  
100  
80  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
50  
90  
t r  
td(on)  
t f  
R
td(off)  
- - - -  
= 3.3 , V = 10V  
Ω
GS  
- - - -  
48  
46  
44  
42  
40  
38  
36  
34  
85  
80  
75  
70  
65  
60  
55  
50  
T = 125ºC, V = 10V  
J
GS  
G
V
= 42.5V  
V
= 42.5V  
DS  
DS  
I
= 25A  
D
I
= 50A  
D
I
= 25A  
D
60  
I
= 50A  
D
40  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
240  
220  
200  
180  
160  
140  
120  
100  
80  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
41.5  
41  
110  
100  
90  
t f  
td(off)  
- - - -  
tf  
R
td(off)  
- - - -  
= 3.3 , VGS = 10V  
T = 125ºC, V = 10V  
J
GS  
Ω
G
V
= 42.5V  
DS  
VDS = 42.5V  
I
= 25A  
D
40.5  
40  
TJ = 125ºC  
80  
I
= 50A  
D
39.5  
39  
70  
60  
60  
40  
T = 25ºC  
38.5  
38  
J
50  
20  
0
50  
40  
2
4
6
8
10  
12  
14  
16  
18  
20  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
RG - Ohms  
© 2006 IXYS CORPORATION All rights reserved  
IXYS REF: T_230N085T (6V) 8-18-06.xls  
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