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IXTQ180N085T

型号：

IXTQ180N085T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

194 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH180N085T  
IXTQ180N085T  
VDSS = 85  
ID25 = 180  
RDS(on) ≤ 5.5 m Ω  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
85  
85  
V
V
VGSM  
Transient  
20  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
180  
75  
480  
A
A
A
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
1.0  
A
J
G
D
S
(TAB)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 5 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC =25°C  
430  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀUnclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
85  
V
V
2.0  
4.0  
- 42V Power Bus  
- ABS Systems  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
TJ = 150° C  
Systems  
High Current Switching  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
4.2  
5.5 m Ω  
Applications  
DS99701 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH180N085T  
IXTQ180N085T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247AD Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
70  
120  
S
Ciss  
Coss  
Crss  
7500  
930  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
200  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
32  
70  
55  
65  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
170  
40  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
46  
RthJC  
RthCS  
0.35°C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
3.65  
.140 .144  
IS  
VGS = 0 V  
180  
A
A
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
480  
1.0  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/µs  
90  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTH180N085T  
IXTQ180N085T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
5V  
40  
20  
5V  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
180  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 180A  
D
I
= 90A  
D
6V  
5V  
60  
40  
20  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 90A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
V
= 10V  
15V  
GS  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
- - - -  
1.8  
1.6  
1.4  
1.2  
1
60  
40  
20  
T = 25ºC  
J
0.8  
0.6  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTH180N085T  
IXTQ180N085T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
240  
200  
160  
120  
80  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
125ºC  
25ºC  
150ºC  
60  
40  
40  
20  
0
0
0
40  
80  
120  
160  
200  
240  
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
V
= 43V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
C
oss  
rss  
f = 1 MHz  
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH180N085T  
IXTQ180N085T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
80  
70  
60  
50  
40  
30  
20  
90  
80  
70  
60  
50  
40  
30  
20  
R
= 5  
Ω
G
T = 25ºC  
J
V
V
= 10V  
= 43V  
GS  
DS  
R
V
V
= 5  
Ω
G
= 10V  
= 43V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
140  
60  
56  
52  
48  
44  
40  
36  
32  
68  
66  
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
94  
I
= 50A  
D
t r  
td(on)  
- - - -  
90  
86  
82  
78  
74  
70  
66  
62  
58  
54  
50  
120  
100  
80  
60  
40  
20  
0
TJ = 125ºC, V = 10V  
GS  
I
= 25A  
td(off)  
V
= 43V  
D
DS  
I
= 50A  
D
t f  
R
- - - -  
= 5 , V = 10V  
Ω
G
GS  
I
= 25A  
D
V
= 43V  
DS  
I
= 25A, 50A  
D
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
160  
140  
120  
100  
80  
300  
260  
220  
180  
140  
100  
60  
72  
68  
64  
60  
56  
52  
48  
44  
100  
92  
84  
76  
68  
60  
52  
44  
t f  
td(off)  
- - - -  
T = 125ºC  
J
T = 125ºC, V = 10V  
J
GS  
V
= 43V  
DS  
I
= 25A  
D
T = 25ºC  
J
tf  
td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
I
= 50A  
D
R
G
V
DS = 43V  
T = 25ºC  
J
60  
TJ = 125ºC  
40  
24  
28  
32  
36  
40  
44  
48  
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
RG - Ohms  
IXYS REF: T_180N085T (5V) 6-13-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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