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UZXM61N03FTC

型号：

UZXM61N03FTC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

7 页

PDF大小：

322 K

下载PDF手册
ZXM61N03F  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=30V; RDS(ON)=0.22⍀; ID=1.4A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
SOT23  
FEATURES  
•
•
•
•
•
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
Top View  
ZXM61N03FTA  
ZXM61N03FTC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
•
N03  
ISSUE 1 - J UNE 2004  
1
ZXM61N03F  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDSS  
VGS  
LIMIT  
30  
UNIT  
Drain-Source Voltage  
Gate Source Voltage  
V
V
A
±20  
Continuous Drain Current (VGS=10V; TA=25°C)(b)  
ID  
1.4  
1.1  
(VGS=10V; TA=70°C)(b)  
Pulsed Drain Current (c)  
IDM  
IS  
7.3  
0.8  
7.3  
A
A
A
Continuous Source Current (Body Diode) (b)  
Pulsed Source Current (Body Diode)  
ISM  
PD  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
625  
5
mW  
mW/°C  
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
PD  
806  
6.4  
mW  
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
RθJA  
VALUE  
200  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
RθJA  
155  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
ISSUE 1 - J UNE 2004  
2
ZXM61N03F  
CHARACTERISTICS  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Refer Note (a)  
Refer Note (b)  
Refer Note (a)  
1
DC  
1s  
100ms  
10ms  
1ms  
100m  
100us  
10m  
0.1  
1
10  
100  
0
20  
40  
60  
80  
100 120 140 160  
VDS - Drain-Source Voltage (V)  
T - Temperature (°C)  
Safe Operating Area  
Derating Curve  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
Refer Note (b)  
Refer Note (a)  
D=0.5  
D=0.5  
60  
D=0.2  
40  
D=0.2  
40  
D=0.1  
D=0.05  
D=0.1  
20  
Single Pulse  
Single Pulse  
D=0.05  
0
0
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001 0.001 0.01  
0.1  
1
10  
100 1000  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Transient Thermal Impedance  
ISSUE 1 - J UNE 2004  
3
ZXM61N03F  
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated).  
A
PARAMETER  
SYMBOL MIN.  
TYP.(3) MAX.  
UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V(BR)DSS 30  
IDSS  
V
ID=250µA, VGS=0V  
VDS=30V, VGS=0V  
VGS=± 20V, VDS=0V  
ID=250µA, VDS= VGS  
1
µA  
nA  
V
IGSS  
100  
Gate-Source Threshold Voltage  
VGS(th)  
RDS(on)  
1.0  
Static Drain-Source On-State Resistance  
(1)  
0.22  
0.30  
VGS=10V, ID=0.91A  
VGS=4.5V, ID=0.46A  
Ω
Ω
Forward Transconductance (3)  
DYNAMIC (3)  
gfs  
0.87  
S
VDS=10V,ID=0.46A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
150  
35  
pF  
pF  
pF  
VDS=25 V, VGS=0V,  
f=1MHz  
15  
td(on)  
tr  
td(off)  
tf  
1.9  
2.5  
5.8  
3.0  
4.1  
0.4  
0.63  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DD =15V, ID=0.91A  
RG=6.2Ω, RD=16Ω  
(refer to test  
circuit)  
Turn-Off Delay Time  
Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
VDS=24V,VGS=10V,  
ID=0.91A  
(refer to test  
circuit)  
Qgs  
Qgd  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
VSD  
0.95  
V
TJ=25°C, IS=0.91A,  
VGS=0V  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
NOTES  
trr  
11.0  
3.5  
ns  
TJ=25°C, IF=0.91A,  
di/dt= 100A/µs  
Qrr  
nC  
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - J UNE 2004  
4
ZXM61N03F  
TYPICAL CHARACTERISTICS  
VGS  
9V  
5V  
10  
1
VGS  
10  
+150°C  
+25°C  
5V  
4V  
4V  
1
3.5V  
3V  
100m  
3V  
2.5V  
100m  
10m  
1m  
10m  
1m  
2.5V  
2.0V  
100u  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
VDS - Drain-Source Voltage (V)  
DS  
V
- Drain-Source Voltage (V)  
Ouput Characteristics  
Output Characteristics  
10  
1
2.0  
VDS=10V  
RDS(on)  
1.5  
VGS=10V  
ID=0.91A  
1.0  
0.5  
0
VGS=VDS  
ID=250uA  
0.1  
0.01  
T=150°C  
T=25°C  
VGS(th)  
1.5  
2.5  
3.5  
-100  
-50  
0
50  
100  
150  
200  
GS  
j
T - Junction Temperature (°C)  
V
- Gate-Source Voltage (V)  
Typical Transfer Characteristics  
Normalised RDS(on) and VGS(th)  
v Temperature  
10  
100  
10  
1
1
100m  
VGS=4.5V  
VGS=10V  
10m  
1m  
T=150°C  
T=25°C  
0.1  
100µ  
ID -1Drain Current (A)  
10  
0.1  
100  
0
0.2  
SD  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-Drain Voltage (V)  
On-Resistance v Drain Current  
Source-Drain Diode Forward Voltage  
ISSUE 1 - J UNE 2004  
5
ZXM61N03F  
TYPICAL CHARACTERISTICS  
10  
250  
200  
150  
100  
50  
Vgs=0V  
f=1MHz  
ID=0.91A  
Ciss  
VDS=24V  
8
Coss  
Crss  
6
4
2
0
0
0.1  
1
10  
100  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS - Drain-Source Voltage (V)  
Q - Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
Switching Time Waveforms  
Switching Time Test Circuit  
ISSUE 1 - J UNE 2004  
6
ZXM61N03F  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
DIM Millimetres  
Min  
Inches  
Max  
3.05  
1.40  
1.10  
0.53  
0.15  
Min  
Max  
A
B
C
D
F
2.67  
0.105  
0.120  
0.055  
0.043  
0.021  
0.0059  
1.20  
0.047  
–
–
0.37  
0.0145  
0.0033  
NOM 0.075  
0.0004  
0.0825  
NOM 0.037  
0.085  
NOM 1.9  
0.01  
G
K
L
0.10  
2.50  
0.004  
2.10  
0.0985  
N
NOM 0.95  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1999  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any  
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the  
right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - J UNE 2004  
7
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