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IXTT440N04T4HV

型号：

IXTT440N04T4HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

240 K

下载PDF手册
Advance Technical Information  
TrenchT4TM  
Power MOSFET  
VDSS = 40V  
ID25 = 440A  
RDS(on) 1.25m  
IXTT440N04T4HV  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 175C  
40  
40  
V
V
S
VDGR  
TJ = 25C to 175C, RGS = 1M  
D (Tab)  
VGSM  
Transient  
15  
V
G = Gate  
S = Source  
D
= Drain  
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, RMS  
440  
160  
A
A
Tab = Drain  
IDM  
TC = 25C, Pulse Width Limited by TJM  
1200  
A
IA  
TC = 25C  
TC = 25C  
440  
1.5  
A
J
EAS  
PD  
TC = 25C  
940  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Package  
Low RDS(ON) and QG  
-55 ... +175  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Weight  
4
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
2.0  
4.0  
200 nA  
IDSS  
10 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.25 m  
DS100719(4/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTT440N04T4HV  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
110  
180  
S
RGi  
1.1  
Ciss  
Coss  
Crss  
26  
3570  
235  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
44  
250  
120  
74  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2(External)  
Qg(on)  
Qgs  
480  
136  
162  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.16 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
440  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
1760  
1.4  
V
trr  
QRM  
IRM  
72  
110  
3
ns  
IF = 150A, -di/dt = 100A/μs  
nC  
VR = 30V  
A
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT440N04T4HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
V = 10V  
GS  
V
= 15V  
GS  
300  
250  
200  
150  
100  
50  
10V  
9V  
8V  
7V  
8V  
7V  
6.5V  
6V  
5V  
6V  
0
0
0
0.05  
0.1  
0.15  
0.2  
0.25  
0.3  
0.35  
0.4  
0
0.5  
1
1.5  
2
2.5  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 100A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
10V  
8V  
I
> 100A  
D
7V  
6V  
5V  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) to ID = 100A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
T = 175ºC  
J
V
= 10V  
15V  
GS  
60  
T = 25ºC  
J
40  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTT440N04T4HV  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
175  
150  
125  
100  
75  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
DS  
V
= 10V  
DS  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
50  
25  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
I
I
= 220A  
= 10mA  
D
G
T
J
= 150ºC  
T
J
= 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
100  
200  
300  
400  
500  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100  
10  
1
= 1 MHz  
f
R
Limit  
DS(on)  
100µs  
C
iss  
External Lead  
Current Limit  
C
oss  
1ms  
T = 175ºC  
J
T
= 25ºC  
C
10ms  
100ms  
C
rss  
Single Pulse  
DC  
1
1
10  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT440N04T4HV  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
600  
500  
400  
300  
200  
100  
0
450  
400  
350  
300  
250  
200  
150  
R
= 2ꢀ , V = 10V  
GS  
G
R
= 2ꢀ , V = 10V  
G
GS  
V
= 20V  
DS  
V
= 20V  
DS  
T
J
= 150ºC  
I
I
= 440A  
= 220A  
D
T
J
= 25ºC  
D
25  
50  
75  
100  
125  
150  
220  
240  
260  
280  
300  
320  
340  
360  
380  
400  
420  
440  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
80  
78  
76  
74  
72  
70  
68  
66  
160  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
180  
t f  
td(off)  
t r  
td(on)  
160  
140  
120  
100  
80  
150  
140  
130  
120  
110  
100  
90  
R
G
= 2ꢀ, V = 10V  
GS  
TJ = 150ºC, V = 10V  
GS  
V
= 20V  
DS  
V
= 20V  
DS  
I
= 220A  
D
I
= 440A  
D
60  
I
= 220A  
D
I
= 440A  
D
40  
20  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
600  
500  
400  
300  
200  
100  
0
650  
550  
450  
350  
250  
150  
50  
80  
78  
76  
74  
72  
70  
68  
66  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
td(off)  
t f  
td(off)  
R
G
= 2Ω, VGS = 10V  
T = 150ºC, V = 10V  
J GS  
V
DS = 20V  
V
= 20V  
DS  
I
= 220A  
D
T = 150ºC  
J
I
= 440A  
D
T = 25ºC  
J
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
220 240 260 280 300 320 340 360 380 400 420 440  
ID - Amperes  
RG - Ohms  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTT440N04T4HV  
Fig. 19. Maximum Transient Thermal Impedance  
aaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_440N04T4 (T7-M04) 4-27-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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