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IXTT10N100D2

型号：

IXTT10N100D2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

166 K

下载PDF手册
Advance Technical Information  
Depletion Mode  
MOSFETs  
VDSX = 1000V  
ID(on) > 10A  
IXTH10N100D2  
IXTT10N100D2  
RDS(on) ≤ 1.5Ω  
N-Channel  
TO-247 (IXTH)  
G
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
D
D (Tab)  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXTT)  
PD  
TC = 25°C  
695  
W
G
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
S
D (Tab)  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
• Easy to Mount  
• Space Savings  
• High Power Density  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 1mA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
V
V
- 4.5  
Applications  
±100 nA  
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
IDSX(off)  
10 μA  
250 μA  
TJ = 125°C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 5A, Note 1  
1.5  
Ω
VGS = 0V, VDS = 25V, Note 1  
10  
A
DS100326(04/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTH10N100D2  
IXTT10N100D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 5A, Note 1  
11  
17  
S
Ciss  
Coss  
Crss  
5320  
300  
70  
pF  
pF  
pF  
∅ P  
VGS = -10V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
33  
36  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = + 5V, VDS = 500V, ID = 5A  
RG = 3.3Ω (External)  
33  
e
164  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
200  
19  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = + 5V, VDS = 500V, ID = 5A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
98  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
SOA  
Test Conditions  
.780 .800  
.177  
VDS = 800V, ID = 0.22A, TC = 75°C, tp = 5s  
176  
W
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Source-Drain Diode  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-268 Outline  
VSD  
IF = 10A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
1.2  
23  
13.8  
μs  
A
μC  
IF = 5A, -di/dt = 100A/μs  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH10N100D2  
IXTT10N100D2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
10  
9
8
7
6
5
4
3
2
1
0
24  
20  
16  
12  
8
VGS = 5V  
VGS = 5V  
1V  
2V  
1V  
0V  
0V  
-1V  
-1V  
- 2V  
- 3V  
4
- 2V  
- 3V  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125ºC  
Fig. 4. Drain Current @ TJ = 25ºC  
10  
9
8
7
6
5
4
3
2
1
0
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
1.E-08  
VGS = 5V  
0V  
VGS  
=
- 3.25V  
- 3.50V  
-1V  
- 3.75V  
- 4.00V  
- 4.25V  
- 4.50V  
- 2V  
- 3V  
- 4.75V  
- 5.00V  
0
4
8
12  
16  
20  
24  
0
100  
200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
Fig. 5. Drain Current @ TJ = 100ºC  
1.E+11  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
V
DS = 700V - 100V  
∆
VGS = - 3.50V  
- 3.75V  
- 4.00V  
TJ = 25ºC  
- 4.25V  
- 4.50V  
TJ = 100ºC  
- 4.75V  
- 5.00V  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-5.0  
-4.8  
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
VGS - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTH10N100D2  
IXTT10N100D2  
Fig. 8. RDS(on) Normalized to ID = 5A Value  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
vs. Drain Current  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 0V  
VGS = 0V  
5V  
- - - -  
I
> 5A  
D
TJ = 125ºC  
TJ = 25ºC  
0
4
8
12  
16  
20  
24  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
VDS = 30V  
VDS = 30V  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
6
6
4
4
2
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
-4  
-3.5  
-3  
-2.5  
-2  
-1.5  
-1  
-0.5  
0
ID - Amperes  
VGS - Volts  
Fig. 11. Normalized Breakdown and Threshold  
Voltages vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
30  
25  
20  
15  
10  
5
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS = -10V  
VGS(off) @ VDS = 25V  
BVDSX @ VGS = - 5V  
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH10N100D2  
IXTT10N100D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
100,000  
10,000  
1,000  
100  
VDS = 500V  
= 1 MHz  
f
I
I
D = 5A  
3
G = 10mA  
C
iss  
2
1
0
-1  
-2  
-3  
-4  
-5  
C
C
oss  
rss  
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
100  
10  
1
100  
10  
1
R
Limit  
DS(on)  
R
Limit  
DS(on)  
25µs  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
10ms  
T
T
= 150ºC  
= 25ºC  
T
= 150ºC  
J
J
100ms  
T
= 75ºC  
C
C
DC  
Single Pulse  
Single Pulse  
100ms  
DC  
0
0
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_10N100D2(8C)04-06-11  
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