找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

HZM6.8ZFA

型号:

HZM6.8ZFA

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

6 页

PDF大小:

35 K

HZM6.8ZFA  
Silicon Epitaxial Planar Zener Diode for Surge Absorb  
ADE-208-614 (Z)  
Rev 0  
April 1, 1998  
Features  
HZM6.8ZFA has four devices, and can absorb external + and -surge.  
Low capacitance (C=25pF max) and can protect ESD of signal line.  
MPAK-5 Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HZM6.8ZFA  
68Z  
MPAK-5  
Outline  
2
1
5
1 Cathode  
2 Cathode  
3 Cathode  
4 Anode  
4
3
5 Cathode  
(Top View)  
HZM6.8ZFA  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
200  
Unit  
mW  
°C  
*1  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
Tstg  
–55 to +150  
°C  
Note 1. Four device total, See Fig.2.  
Electrical Characteristics (Ta = 25°C) *1  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Zener voltage  
Reverse current  
Capacitance  
VZ  
IR  
6.47  
7.00  
2
V
IZ = 5 mA, 40ms pulse  
µA  
pF  
VR = 3.5V  
C
25  
30  
VR = 0V, f = 1 MHz  
IZ = 5 mA  
Dynamic resistance r d  
*2  
ESD-Capability  
20  
kV  
C =150pF, R = 330 , Both forward and  
reverse direction 10 pulse  
Notes 1. Per one device.  
2. Failure criterion ; IR > 2 µA at VR = 3.5V.  
2
HZM6.8ZFA  
Main Characteristic  
10-2  
250  
200  
1.0mm  
-3  
10  
Cu Foil  
Printed circuit board  
×
×
25 62 1.6t mm  
150  
100  
Material:  
Glass Epoxy Resin+Cu Foil  
-4  
10  
10-5  
50  
0
10-6  
0
4
6
8
10  
0
50  
Ambient Temperature Ta ( C)  
200  
2
100  
150  
Zener Voltage Vz (V)  
°
Fig.2 Power Dissipation Vs. Ambient Temperature  
Fig.1 Zener current Vs. Zener voltage  
4
10  
PRSM  
t
Ta = 25°C  
nonrepetitive  
103  
102  
10  
1.0  
-4  
-3  
-2  
-1  
10-5  
10  
10  
10  
10  
1.0  
Time  
t
(s)  
Fig.3 Surge Reverse Power Ratings  
3
HZM6.8ZFA  
Main Characteristic  
4
10  
103  
102  
10  
1.0  
103  
-1  
10-2  
10  
1.0  
10  
102  
Time t (s)  
Fig.4 Transient Thermal Impedance  
4
HZM6.8ZFA  
Package Dimensions (Unit : mm)  
(0.95)  
(0.95)  
0.4±0.1  
0.4±0.1  
Laser Mark  
0.16  
2
1
0 to 0.15  
68Z  
1 Cathode  
2 Cathode  
3 Cathode  
4 Anode  
5
4
3
0.4±0.1  
0.4±0.1  
1.9  
2.9±0.2  
5 Cathode  
Hitachi Code  
JEDEC Code  
EIAJ Code  
MPAK-5  
Weight (g)  
0.013  
5
HZM6.8ZFA  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of  
this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any  
other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual  
property claims or other problems that may result from applications based on the examples described  
herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party or  
Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111  
Fax: (03) 3270-5109  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
2000 Sierra Point Parkway  
Brisbane, CA. 94005-1897  
U S A  
Hitachi Europe GmbH  
Continental Europe  
Dornacher Straße 3  
D-85622 Feldkirchen  
München  
Hitachi Europe Ltd.  
Electronic Components Div.  
Northern Europe Headquarters  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA  
United Kingdom  
Tel: 01628-585000  
Fax: 01628-585160  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Tel: 800-285-1601  
Fax:303-297-0447  
Tel: 089-9 91 80-0  
Fax: 089-9 29 30-00  
Fax: 535-1533  
Hitachi Asia (Hong Kong) Ltd.  
Unit 706, North Tower,  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel: 27359218  
Fax: 27306071  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
6
厂商 型号 描述 页数 下载

HITACHI

HZM 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 10 页

HITACHI

HZM-N 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 10 页

RENESAS

HZM-N 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 8 页

ETC

HZM-NSERIES [ ] 10 页

RENESAS

HZM-N_11 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 7 页

RENESAS

HZM10N 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 8 页

HITACHI

HZM10N 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 10 页

RENESAS

HZM10NB 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 8 页

RENESAS

HZM10NB1 硅外延平面齐纳二极管的稳定器[ Silicon Epitaxial Planar Zener Diode for Stabilizer ] 8 页

HITACHI

HZM10NB1 [ Zener Diode, 9.66V V(Z), 2.1739%, 0.2W, Silicon, Unidirectional ] 10 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.245984s