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HZM-NSERIES

型号：

HZM-NSERIES

品牌：

ETC[ ETC ]

页数：

10 页

PDF大小：

53 K

下载PDF手册
HZM-N Series  
Silicon Epitaxial Planar Zener Diode for Stabilizer  
ADE-208-130D (Z)  
Rev.4  
Dec. 2002  
Features  
•
•
Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  
MPAK Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HZM-N Series  
Let to Mark Code  
MPAK  
Pin Arrangement  
3
1. NC  
2. Anode  
1
2
(Top View)  
3. Cathode  
HZM-N Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd *1  
Tj  
Value  
200  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Note: 1. See Fig. 3.  
150  
Tstg  
–55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage *1  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)  
Condition  
IR (µA)  
Max  
120  
Condition  
rd (Ω)  
Max  
100  
Condition  
Type  
Grade  
Min  
Max  
2.20  
2.40  
2.60  
2.90  
2.75  
2.90  
3.20  
3.05  
3.20  
3.50  
3.35  
3.50  
3.80  
3.65  
3.80  
4.10  
3.97  
4.10  
IZ (mA)  
VR (V)  
0.5  
IZ (mA)  
HZM2.0N  
HZM2.2N  
HZM2.4N  
HZM2.7N  
B
1.90  
2.10  
2.30  
2.50  
2.50  
2.65  
2.80  
2.80  
2.95  
3.10  
3.10  
3.25  
3.40  
3.40  
3.55  
3.70  
3.70  
3.87  
5
5
5
5
5
5
5
5
B
120  
0.7  
100  
B
120  
1.0  
100  
B
120  
1.0  
110  
B1  
B2  
B
HZM3.0N  
HZM3.3N  
HZM3.6N  
HZM3.9N  
5
5
5
5
50  
20  
10  
10  
1.0  
1.0  
1.0  
1.0  
120  
130  
130  
130  
5
5
5
5
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.4, Dec. 2002, page 2 of 10  
HZM-N Series  
Zener Voltage *1  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)  
Condition  
IR (µA)  
Max  
10  
Condition  
rd (Ω)  
Max  
130  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
4.48  
4.21  
4.34  
4.48  
4.90  
4.61  
4.75  
4.90  
5.37  
5.04  
5.20  
5.37  
5.92  
5.55  
5.73  
5.92  
6.53  
6.12  
6.33  
6.53  
7.14  
6.73  
6.93  
7.14  
7.84  
7.36  
7.60  
7.84  
8.64  
8.10  
8.36  
8.64  
IZ (mA)  
VR (V)  
HZM4.3N  
B
4.01  
4.01  
4.15  
4.28  
4.42  
4.42  
4.55  
4.69  
4.84  
4.84  
4.98  
5.14  
5.31  
5.31  
5.49  
5.67  
5.86  
5.86  
6.06  
6.26  
6.47  
6.47  
6.65  
6.86  
7.06  
7.06  
7.28  
7.52  
7.76  
7.76  
8.02  
8.28  
5
1.0  
B1  
B2  
B3  
B
HZM4.7N  
HZM5.1N  
HZM5.6N  
HZM6.2N  
HZM6.8N  
HZM7.5N  
HZM8.2N  
5
5
5
5
5
5
5
10  
5
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
130  
130  
80  
5
5
5
5
5
5
5
B1  
B2  
B3  
B
B1  
B2  
B3  
B
5
B1  
B2  
B3  
B
2
50  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
B
2
30  
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.4, Dec. 2002, page 3 of 10  
HZM-N Series  
Zener Voltage *1  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)  
Condition  
IR (µA)  
Max  
2
Condition  
rd (Ω)  
Max  
30  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
IZ (mA)  
VR (V)  
HZM9.1N  
B
8.56  
9.55  
5
6.0  
B1  
B2  
B3  
B
8.56  
8.93  
8.85  
9.23  
9.15  
9.55  
HZM10N  
HZM11N  
HZM12N  
HZM13N  
HZM15N  
HZM16N  
HZM18N  
9.45  
10.55  
9.87  
5
5
5
5
5
5
5
2
2
2
2
2
2
2
7.0  
30  
30  
35  
35  
40  
40  
45  
5
5
5
5
5
5
5
B1  
B2  
B3  
B
9.45  
9.77  
10.21  
10.55  
11.56  
10.88  
11.22  
11.56  
12.60  
11.90  
12.24  
12.60  
13.96  
13.03  
13.49  
13.96  
15.52  
14.46  
14.98  
15.52  
17.09  
16.01  
16.51  
17.09  
19.03  
17.70  
18.35  
19.03  
10.11  
10.44  
10.44  
10.76  
11.10  
11.42  
11.42  
11.74  
12.08  
12.47  
12.47  
12.91  
13.37  
13.84  
13.84  
14.34  
14.85  
15.37  
15.37  
15.85  
16.35  
16.94  
16.94  
17.56  
18.21  
8.0  
B1  
B2  
B3  
B
9.0  
B1  
B2  
B3  
B
10.0  
11.0  
12.0  
13.0  
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.4, Dec. 2002, page 4 of 10  
HZM-N Series  
Zener Voltage *1  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)  
Condition  
IR (µA)  
Max  
2
Condition  
rd (Ω)  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
IZ (mA)  
VR (V)  
HZM20N  
B
18.86  
18.86  
19.52  
20.21  
20.88  
20.88  
21.54  
22.23  
22.93  
22.93  
23.72  
24.54  
25.10  
28.00  
31.00  
34.00  
21.08  
19.70  
20.39  
21.08  
23.17  
21.77  
22.47  
23.17  
25.57  
23.96  
24.78  
25.57  
28.90  
32.00  
35.00  
38.00  
5
15.0  
B1  
B2  
B3  
B
HZM22N  
HZM24N  
5
5
2
2
17.0  
19.0  
55  
60  
5
5
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZM27N  
HZM30N  
HZM33N  
HZM36N  
2
2
2
2
2
2
2
2
21.0  
23.0  
25.0  
27.0  
70  
80  
80  
90  
2
2
2
2
B
B
B
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.4, Dec. 2002, page 5 of 10  
HZM-N Series  
Mark Code  
Type  
Grade MARK No.  
Type  
Grade MARK No.  
Type  
Grade MARK No.  
HZM2.0N  
HZM2.2N  
HZM2.4N  
B
B
B
2 0 –  
2 2 –  
2 4 –  
2 7 1  
2 7 2  
3 0 1  
3 0 2  
3 3 1  
3 3 2  
3 6 1  
3 6 2  
3 9 1  
3 9 2  
4 3 1  
4 3 2  
4 3 3  
4 7 1  
4 7 2  
4 7 3  
5 1 1  
5 1 2  
5 1 3  
5 6 1  
5 6 2  
5 6 3  
6 2 1  
6 2 2  
6 2 3  
6 8 1  
6 8 2  
6 8 3  
HZM7.5N B1  
7 5 1  
7 5 2  
7 5 3  
8 2 1  
8 2 2  
8 2 3  
9 1 1  
9 1 2  
9 1 3  
1 0 1  
1 0 2  
1 0 3  
1 1 1  
1 1 2  
1 1 3  
1 2 1  
1 2 2  
1 2 3  
1 3 1  
1 3 2  
1 3 3  
1 5 1  
1 5 2  
1 5 3  
1 6 1  
1 6 2  
1 6 3  
1 8 1  
1 8 2  
1 8 3  
HZM20N B1  
2 0 1  
2 0 2  
2 0 3  
2 2 1  
2 2 2  
2 2 3  
2 4 1  
2 4 2  
2 4 3  
2 7 –  
3 0 –  
3 3 –  
3 6 –  
B2  
B2  
B3  
B3  
HZM2.7N B1  
HZM8.2N B1  
HZM22N B1  
B2  
B2  
B2  
HZM3.0N B1  
B3  
B3  
B2  
HZM9.1N B1  
HZM24N B1  
HZM3.3N B1  
B2  
B2  
B3  
B2  
B3  
HZM3.6N B1  
HZM10N B1  
HZM27N  
HZM30N  
HZM33N  
HZM36N  
B
B
B
B
B2  
B2  
HZM3.9N B1  
B3  
B2  
HZM11N B1  
HZM4.3N B1  
B2  
B2  
B3  
B3  
HZM12N B1  
HZM4.7N B1  
B2  
B2  
B3  
B3  
HZM13N B1  
HZM5.1N B1  
B2  
B2  
B3  
B3  
HZM15N B1  
HZM5.6N B1  
B2  
B2  
B3  
B3  
HZM16N B1  
HZM6.2N B1  
B2  
B2  
B3  
B3  
HZM18N B1  
HZM6.8N B1  
B2  
B3  
B2  
B3  
Rev.4, Dec. 2002, page 6 of 10  
HZM-N Series  
Example of Marking  
1. One grade type (grade type B)  
Underline  
20 -  
30 -  
-
HZM2.0NB  
HZM30NB  
2. Two grade type (B1, B2)  
301  
302  
HZM3.0NB1  
HZM3.0NB2  
3. Three grade type (B1, B2, B3)  
433  
431  
432  
HZM4.3NB1  
HZM4.3NB3  
HZM4.3NB2  
Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max.  
B grade is standard and has better delivery, These are marked one of B1, B2, B3.  
Ordering P/N HZM-N series are delivered taped (TL/TR).  
Choose one taping code and adhere to parts No.  
Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).  
(Grade B type)  
2.  
3.  
HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR).  
(Grade B1, B2, B3 type)  
Rev.4, Dec. 2002, page 7 of 10  
HZM-N Series  
Main Characteristic  
10  
8
6
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
0.10  
250  
1.0mm  
0.09  
%/°C  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
–0.01  
–0.02  
–0.03  
–0.04  
–0.05  
–0.06  
40  
35  
30  
25  
20  
15  
10  
5
0
–5  
200  
Cu Foil  
Printed circuit board  
×
×
25 62 1.6t mm  
Material:  
Glass Epoxy Resin+Cu Foil  
mV/°C  
150  
100  
–10  
–15  
–20  
50  
–25  
0
0
5
10 15 20 25 30 35 40 45  
Zener Voltage VZ (V)  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.4, Dec. 2002, page 8 of 10  
HZM-N Series  
Package Dimensions  
As of July, 2002  
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3–0.4  
0 – 0.1  
(0.95) (0.95)  
1.9 ± 0.2  
+ 0.3  
– 0.1  
2.8  
Hitachi Code  
JEDEC  
MPAK  
—
JEITA  
Mass (reference value)  
Conforms  
0.011 g  
Rev.4, Dec. 2002, page 9 of 10  
HZM-N Series  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive Whitebrook Park  
Hitachi Europe Ltd.  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Tel : <65>-6538-6533/6538-8577  
Fax : <65>-6538-6933/6538-3877  
URL : http://semiconductor.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-2735-9218  
Fax: <44> (1628) 778322  
Fax : <852>-2730-0281  
URL : http://semiconductor.hitachi.com.hk  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Str 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
URL : http://semiconductor.hitachi.com.tw  
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.  
Colophon 7.0  
Rev.4, Dec. 2002, page 10 of 10  
厂商 型号 描述 页数 下载

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