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HZM5.6ZFA-E

型号:

HZM5.6ZFA-E

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

6 页

PDF大小:

251 K

HZM5.6ZFA  
Silicon Epitaxial Planar Zener Diode for Surge Absorb  
REJ03G1206-0300  
(Previous: ADE-208-796B)  
Rev.3.00  
Jun 03, 2005  
Features  
HZM5.6ZFA has four devices, and can absorb surge.  
Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.  
MPAK-5 Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Package Code  
(Previous Code)  
Type No.  
Laser Mark  
Package
HM5.6ZFA  
56Z  
M
PLSP0005ZC-A  
(MPAK-5)  
Pin Arrangement  
3
1. Cathode  
2. Cathode  
3. Cathode  
4. Anode  
5. Cathode  
p View)  
Rev.3.00 Jun 03, 2005 page 1 of 5  
HZM5.6ZFA  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Power dissipation  
Symbol  
Value  
200  
Unit  
mW  
Pd *  
Junction temperature  
Tj  
150  
°C  
Storage temperature  
Tstg  
55 to +150  
°C  
Note: Four device total, See Fig.2.  
Electrical Characteristics *1  
(Ta = 25°C)  
Item  
Zener voltage  
Reverse current  
Capacitance  
Symbol  
VZ  
IR  
C
rd  
Min  
5.31  
Typ  
8.0  
Max  
5.92  
0.5  
8.5  
80  
Unit  
V
µA  
pF  
Test Condition  
IZ = 5 mA, 40 ms pulse  
VR = 2.5 V  
VR =0 V, f = 1 MHz  
5 mA  
0 pF, R = 330 , Both forward  
e direction 10 pulse.  
Dynamic resistance  
ESD-Capability *2  
8
kV  
Notes: 1. Per one device  
2. Failure criterion ; IR > 0.5 µA at VR = 2.5 V.  
Rev.3.00 Jun 03, 2005 page 2 of 5  
HZM5.6ZFA  
Main Characteristic  
10-2  
250  
200  
150  
100  
50  
1.0mm  
10-3  
10-4  
10-5  
10-6  
Cu Foil  
Printed circuit board  
×
×
25 62 1.6t mm  
Material:  
Glass Epoxy Resin+Cu Foil  
0
0
2
4
6
8
10  
0
0  
150  
200  
Zener Voltage VZ (V)  
Ta (°C)  
FAmbient Temperature  
Fig.1 Zener current vs. Zener voltage  
104  
103  
PRSM  
t
Ta = 25°C  
nonrepetitive  
102  
10  
1.0  
10-5  
10-4  
10-3  
10-2  
10-1  
1.0  
Time t (s)  
Fig.3 Surge Reverse Power Ratings  
Rev.3.00 Jun 03, 2005 page 3 of 5  
HZM5.6ZFA  
104  
103  
102  
10  
1.0  
10-2  
10-1  
1.0  
10  
102  
103  
Time t (s)  
Fig.4 Transient Thermal Im
Rev.3.00 Jun 03, 2005 page 4 of 5  
HZM5.6ZFA  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
MASS[Typ.]  
0.013g  
SC-74A  
PLSP0005ZC-A  
MPAK-5 / MPAK-5V  
D
e
c
E
H
E
L
L
1
A
A
b
e
Reference  
Symbol  
Dimension in Millimeters  
Min  
1.0  
0
1.0  
0.3  
0.11  
2.7  
1.5  
-
2.5  
-
0.15  
-
Nom Max  
A
-
-
1.4  
0.1  
1.3  
0.5  
0.26  
3.1  
1.8  
-
A
2
A
A
A
1
2
1.1  
0.4  
0.16  
2.9  
1.6  
0.95  
2.8  
0.6  
-
b
c
D
E
e
A
1
b
H
3.0  
-
-
E
l
1
L
c
L
1
b
2
-
0.55  
-
e
1
-
2.15  
-
A — A Section  
eas  
l
-
0.85  
1
Rev.3.00 Jun 03, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-mhiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and me is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property dam
Remember to give due consideration to safety when making your circuit designs, with appropriate ent of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of tht suited to the customer's  
application; they do not convey any license under any intellectual property rights, or annology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringemethe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained i
3. All information contained in these materials, including product data, diagrams, chinformation on products at the time of  
publication of these materials, and are subject to change by Renesas Technoloprovements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. rp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or ty
Renesas Technology Corp. assumes no responsibility for any damageaccuracies or errors.  
Please also pay attention to information published by Renesas Techthe Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these matearts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a finaation and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss result
5. Renesas Technology Corp. semiconductors are not desigr system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technolnology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, sution, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology e in whole or in part these materials.  
7. If these products or technologies are subject to hey must be exported under a license from the Japanese government and  
cannot be imported into a country other than
Any diversion or reexport contrary to the exand/or the country of destination is prohibited.  
8. Please contact Renesas Technology Cor the products contained therein.  
RENESAS SALES O
http://www.renesas.com  
Refer to "http://www.renesas.comatest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 3501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 2.0  
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