IXTQ 200N06P
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
65
S
Ciss
Coss
Crss
5400
3550
1360
pF
pF
pF
td(on)
tr
td(off)
tf
35
60
90
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
Qg(on)
Qgs
200
37
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
110
RthJC
RthCS
0.21° C/W
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
200
A
A
V
ISM
400
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A, -di/dt = 100 A/µs
90
ns
QRM
VR = 30 V, VGS = 0 V
1.0
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
