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IXTT48P20P

型号：

IXTT48P20P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

133 K

下载PDF手册
Preliminary Technical Information  
PolarPTM  
Power MOSFET  
VDSS = - 200V  
ID25 = - 48A  
IXTH48P20P  
IXTT48P20P  
RDS(on)  
≤
85mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
(TAB)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
TO-268 (IXTT)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 48  
A
A
G
-144  
S
IAR  
TC = 25°C  
TC = 25°C  
- 48  
2.5  
A
J
(TAB)  
EAS  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
462  
Features:  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z International standard packages  
z Avalanche Rated  
z Rugged PolarPTM process  
z Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247, TO-3P)  
Mounting force (PLUS220)  
1.13 / 10  
Nm/lb.in.  
N/lb.  
FC  
11..65 / 2.5..14.6  
Applications:  
Weight  
TO-247  
TO-268  
6
5
g
g
z
High side switching  
z
Push-pull amplifiers  
DC Choppers  
Current regulators  
Automatic test equipment  
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Advantages:  
(TJ = 25°C, unless otherwise specified)  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
- 200  
- 2.5  
V
Low gate charge results in simple  
drive requirement  
High power density  
Fast switching  
- 4.5  
V
z
z
±100 nA  
z
Easy to parallel  
IDSS  
VDS = VDSS  
VGS = 0V  
- 25 μA  
- 200 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
85 mΩ  
DS99981(6/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH48P20P  
IXTT48P20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
19  
32  
S
Ciss  
Coss  
Crss  
5400  
1040  
170  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
30  
46  
67  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
103  
23  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
40  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
- 48  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = - 24A, VGS = 0V, Note 1  
- 192  
- 3.3  
TO-268 (IXTT) Outline  
trr  
QRM  
IRM  
260  
4.2  
- 32.2  
ns  
μC  
A
IF = - 24A, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH48P20P  
IXTT48P20P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VGS = -10V  
- 9V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 8V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
-8.0  
-160  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 24A vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
- 9V  
- 8V  
VGS = -10V  
- 7V  
- 6V  
I D = - 48A  
I D = - 24A  
- 5V  
0
0.0  
-1.0  
-2.0  
-3.0  
-4.0  
-5.0  
-6.0  
-7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 24A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-52  
-48  
-44  
-40  
-36  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
TJ - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH48P20P  
IXTT48P20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
0
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-7.5  
-4.5  
-40  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VDS = -100V  
D = - 24A  
I G = -1mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
-
1,000  
10,000  
1,000  
100  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
RDS(on) Limit  
C
iss  
-
100  
100µs  
C
1ms  
oss  
-
10  
10ms  
C
rss  
100ms  
= 1 MHz  
-5  
f
DC  
100  
-
1
0
-10  
-15  
-20  
-25  
-30  
-35  
-
10  
-
-
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH48P20P  
IXTT48P20P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_48P20P(B7) 5-13-08  
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