NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
ZTX849
FEATURES
*
*
*
5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltages
APPLICATIONS
*
*
*
*
LCD backlight converter
Flash gun converters
Battery powered circuits
Motor drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
80
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
6
V
Peak Pulse Current
20
5
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
A
Ptotp
Ptot
1.58
W
W
°C
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
80
80
30
6
120
120
40
V
V
V
V
IC=100µA
Collector-Emitter Breakdown
Voltag
IC=1µA, RB ≤1KΩ
IC=10mA*
IE=100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
8
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
ICER
R ≤1KΩ
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
25
50
110
180
50
mV
mV
mV
mV
IC=0.5A, IB=20mA*
IC=1A, IB=20mA*
IC=2A, IB=20mA*
IC=5A, IB=200mA*
100
200
220
Base-Emitter
Saturation Voltage
VBE(sat)
930
1050 mV
IC=5A, IB=200mA*
3-291
