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IXTT20P50P

型号：

IXTT20P50P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

274 K

下载PDF手册
PolarPTM  
Power MOSFET  
VDSS = - 500V  
ID25 = - 20A  
IXTT20P50P  
IXTH20P50P  
RDS(on)  
450m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 500  
- 500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 20  
- 60  
A
A
D (Tab)  
IA  
TC = 25C  
TC = 25C  
- 20  
2.5  
A
J
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
460  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Features  
International Standard Packages  
Avalanche Rated  
Rugged PolarPTM Process  
Low Package Inductance  
Fast Intrinsic Diode  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
- 500  
- 2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 A  
VDS = VGS, ID = - 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
- 4.5  
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
100 nA  
IDSS  
- 25 A  
TJ = 125C  
- 200 A  
Current Regulators  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
450 m  
DS99984C(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTT20P50P  
IXTH20P50P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
11  
18  
S
Ciss  
Coss  
Crss  
5120  
525  
75  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
32  
80  
34  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3(External)  
Qg(on)  
Qgs  
103  
28  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
38  
RthJC  
RthCS  
0.27C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 20  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -10A, VGS = 0V, Note 1  
- 80  
- 2.8  
trr  
QRM  
IRM  
406  
8.93  
- 44  
ns  
μC  
A
IF = -10A, -di/dt = -150A/s  
VR = -100V, VGS = 0V  
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT20P50P  
IXTH20P50P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
V
= -10V  
- 7V  
GS  
V
= -10V  
- 7V  
GS  
- 6V  
- 6V  
-6  
- 5V  
-4  
- 5V  
-20  
-2  
0
0
0
-5  
-10  
-15  
-25  
-30  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -10A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
V
= -10V  
- 7V  
GS  
V
= -10V  
GS  
- 6V  
I
= - 20A  
D
I
= -10A  
D
- 5V  
-6  
-4  
-2  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -10A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-22  
-18  
-14  
-10  
-6  
V
= -10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
TC - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTT20P50P  
IXTH20P50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
-35  
-30  
-25  
-20  
-15  
-10  
-5  
T
= - 40ºC  
J
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
V
I
= - 250V  
DS  
= -10A  
D
I
= -1mA  
G
T
J
= 125ºC  
T
J
= 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
-
100  
R
Limit  
DS(on)  
100µs  
1ms  
C
iss  
-
10  
10ms  
C
C
oss  
100ms  
-
1
DC  
T
= 150ºC  
= 25ºC  
J
rss  
T
f
= 1 MHz  
-5  
C
Single Pulse  
10  
- 0.1  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-
1000  
-
-
100  
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXTT20P50P  
IXTH20P50P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-268 OUTLINE  
TO-247 OUTLINE  
PINS: 1 - Gate  
2,4 - Drain  
3 - Source  
PINS: 1 - Gate  
2,4 - Drain  
3 - Source  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_20P50P(B7) 5-13-08  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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