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IXTU4N70X2

型号：

IXTU4N70X2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

383 K

下载PDF手册
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 4A  
RDS(on) 850m  
IXTU4N70X2  
IXTY4N70X2  
IXTA4N70X2  
IXTP4N70X2  
N-Channel Enhancement Mode  
TO-251 (IXTU)  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
700  
700  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
4
8
A
A
D (Tab)  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
2
A
EAS  
150  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
80  
V/ns  
W
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
2.5  
4.5  
V
Applications  
100 nA  
A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
5
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
850 m  
Robotics and Servo Controls  
DS100779B(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTU4N70X2 IXTY4N70X2  
IXTA4N70X2 IXTP4N70X2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
2.6  
4.0  
S
RGi  
13  
Ciss  
Coss  
Crss  
386  
280  
1
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
29  
80  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
20  
27  
66  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 50(External)  
Qg(on)  
Qgs  
11.8  
3.8  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
3.5  
RthJC  
RthCS  
1.56 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
4
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
16  
1.4  
V
trr  
QRM  
IRM  
186  
1.3  
14.0  
ns  
IF = 2A, -di/dt = 100A/μs  
 μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTU4N70X2 IXTY4N70X2  
IXTA4N70X2 IXTP4N70X2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12  
10  
8
V
= 10V  
8V  
V
= 10V  
GS  
GS  
8V  
7V  
7V  
6V  
6
4
6V  
5V  
2
5V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
150  
160  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 4A  
D
I
= 2A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
1
2
3
4
5
6
7
8
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125oC  
J
BV  
DSS  
T = 25oC  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
1
2
3
4
5
6
7
8
9
10  
11  
12  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTU4N70X2 IXTY4N70X2  
IXTA4N70X2 IXTP4N70X2  
Fig. 8. Input Admittance  
Fig. 7. Maximum Drain Current vs. Case Temperature  
7
6
5
4
3
2
1
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
J
= 125oC  
25oC  
- 40oC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
9
8
7
6
5
4
3
2
1
0
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
1
2
3
4
5
6
7
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10000  
1000  
100  
10  
10  
8
V
= 350V  
DS  
I
I
= 2A  
D
G
C
iss  
= 10mA  
6
C
oss  
4
1
2
C
= 1 MHz  
f
rss  
0.1  
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTU4N70X2 IXTY4N70X2  
IXTA4N70X2 IXTP4N70X2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
10  
7
6
5
4
3
2
1
0
25μs  
R
DS(  
on  
Limit  
)
1
100μs  
0.1  
0.01  
1ms  
T = 150oC  
J
10ms  
T
= 25oC  
C
DC  
Single Pulse  
0
100  
200  
300  
400  
500  
600  
700  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_4N70X2(X1-S602) 1-19-17  
IXTU4N70X2 IXTY4N70X2  
IXTA4N70X2 IXTP4N70X2  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
E
oP  
A1  
4
L1  
D1  
D
H1  
A1  
A2  
Q
L2  
H
H
A1  
L4  
1
3
2
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b2  
b
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
3X b  
3X b2  
e
c
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
TO-251 OUTLINE  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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