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IXTR36P15P

型号:

IXTR36P15P

品牌:

LITTELFUSE[ LITTELFUSE ]

页数:

3 页

PDF大小:

125 K

Preliminary Technical Information  
PolarPTM Power MOSFET  
VDSS = -150V  
ID25 = - 22A  
RDS(on) 120mΩ  
IXTC36P15P  
IXTR36P15P  
(Electrically Isolated Tab)  
P-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS247 (IXTR)  
E153432  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Isolated  
D
S
TJ = 25°C to 175°C  
-150  
-150  
V
V
VDGR  
TJ = 25°C to 175°C, RGS = 1MΩ  
ISOPLUS220 (IXTC)  
E153432  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
- 22  
A
A
G
D
TC = 25°C, Pulse Width Limited by TJM  
-100  
Isolated  
S
IA  
TC = 25°C  
TC = 25°C  
- 36  
1.5  
A
J
EAS  
G = Gate  
D = Drain  
S = Source  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
TC = 25°C  
10  
V/ns  
W
150  
TJ  
TJM  
Tstg  
- 55 ... +175  
175  
- 55 ... +175  
°C  
°C  
°C  
Features  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Isolated Mounting Surface  
z 2500V~ Electrical Isolation  
z Avalanche Rated  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
V~  
FC  
FC  
Mounting Force (ISOPLUS220)  
Mounting Force (ISOPLUS247)  
11..65 / 25..14.6  
20..120 / 4.5..27  
N/lb  
N/lb  
z Extended FBSOA  
z Fast Intrinsic Diode  
Weight  
ISOPLUS220  
ISOPLUS247  
2
5
g
g
z
Low RDS(ON) and QG  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-150  
V
V
Applications  
- 3.0  
- 5.0  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
±100 nA  
z
z
IDSS  
- 10 μA  
- 250 μA  
z
TJ = 150°C  
z
Current Regulators  
RDS(on)  
VGS = -10V, ID = -18A, Note 1  
120 mΩ  
z
Battery Charger Applications  
DS99792A(01/11)  
© 2011 IXYS CORPORATION, All rights reserved  
IXTC36P15P  
IXTR36P15P  
ISOPLUS220TM Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = -18A, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
11  
19  
S
Ciss  
Coss  
Crss  
2950  
615  
pF  
pF  
pF  
115  
td(on)  
tr  
td(off)  
tf  
28  
37  
45  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = -18A  
RG = 5Ω (External)  
Note:  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
Qg(on)  
Qgs  
55  
21  
20  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = -18A  
Qgd  
RthJC  
RthCS  
1.00 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 36  
A
A
V
Ref: IXYS CO 0177 R0  
ISOPLUS 247TM Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -18A, VGS = 0V, Note 1  
-100  
- 3.0  
trr  
QRM  
150  
2.0  
ns  
μC  
IF = - 25, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
Note 1: Pulse test, t 300μs, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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