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IXTP30N25L2

型号：

IXTP30N25L2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

343 K

下载PDF手册
Advance Technical Information  
Linear L2TM  
Power MOSFET  
w/ Extended FBSOA  
VDSS = 250V  
ID25 = 30A  
RDS(on) 140m  
IXTA30N25L2  
IXTP30N25L2  
IXTH30N25L2  
TO-263 (IXTA)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220 (IXTP)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
250  
250  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
30  
65  
A
A
D (Tab)  
TO-247 (IXTH)  
IA  
EAS  
TC = 25C  
TC = 25C  
15  
2
A
J
PD  
TC = 25C  
355  
W
G
D
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
D (Tab)  
S
G = Gate  
S = Source  
D
= Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Tab = Drain  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
Guaranteed FBSOA at 75°C  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
250  
2.5  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.5  
100 nA  
A  
Applications  
IDSS  
5
Solid State Circuit Breakers  
Soft Start Controls  
Linear Amplifiers  
Programmable Loads  
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
140 m  
Current Regulators  
DS100919A(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA30N25L2 IXTP30N25L2  
IXTH30N25L2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
7
11  
15  
S
Ciss  
Coss  
Crss  
3200  
430  
pF  
pF  
pF  
130  
td(on)  
tr  
td(off)  
tf  
22  
78  
65  
23  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3(External)  
Qg(on)  
Qgs  
130  
22  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
77  
RthJC  
RthCS  
0.35C/W  
(TO-220)  
(TO-247)  
0.50  
0.21  
C/W  
C/W  
Safe Operating Area Specification  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
SOA  
VDS = 200V, ID = 1.07A, TC = 75°C, tp = 2s  
214  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
30  
A
A
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
120  
1.4  
V
trr  
QRM  
IRM  
315  
3.1  
19.5  
ns  
IF = 15A, -di/dt = 100A/μs  
C  
VR = 100V, VGS = 0V  
A
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA30N25L2 IXTP30N25L2  
IXTH30N25L2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 20V  
GS  
V
= 20V  
13V  
GS  
12V  
10V  
9V  
8V  
7V  
11V  
10V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
30  
25  
20  
15  
10  
5
V
= 20V  
GS  
V
= 10V  
GS  
12V  
10V  
9V  
8V  
I
= 30A  
D
7V  
I = 15A  
D
6V  
5V  
0
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
35  
30  
25  
20  
15  
10  
5
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
0
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA30N25L2 IXTP30N25L2  
IXTH30N25L2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
24  
20  
16  
12  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
4
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
3
0.4  
0
4
5
6
7
8
9
10  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 125V  
DS  
I
I
= 15A  
D
G
= 10mA  
60  
40  
T
J
= 125oC  
T
= 25oC  
J
20  
0
0
20  
40  
60  
80  
100  
120  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1
C
iss  
0.1  
C
oss  
0.01  
C
rss  
f
= 1 MHz  
10  
0.001  
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA30N25L2 IXTP30N25L2  
IXTH30N25L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
100  
10  
1
100  
10  
1
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
100ms  
10ms  
100ms  
DC  
DC  
TJ = 150oC  
C = 25oC  
Single Pulse  
TJ = 150oC  
C = 75oC  
Single Pulse  
T
T
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_30N25L2 (6R-P27) 7-30-18  
IXTA30N25L2 IXTP30N25L2  
IXTH30N25L2  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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