IXTH20N50D
IXTT20N50D
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
4.0
6.5
9.0
S
Ciss
Coss
Crss
6300
385
82
pF
pF
pF
∅ P
1
2
3
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
RG = 4.7Ω (External)
110
75
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Qg(on)
Qgs
78.5
19.2
35.0
nC
nC
nC
3 - Source
Dim.
Millimeter
Inches
Min. Max.
VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
Min. Max.
Qgd
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.31 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe Operating Area Specification
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Symbol
SOA
Test Conditions
Min.
240
Typ.
Max.
.780 .800
.177
VDS = 400V, ID = 0.6A, TC = 75°C, tP = 3s
W
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TO-268 (IXTT) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
IF = ID25, VGS = -10V, Note 1
0.75
1.4
V
trr
IRM
QRM
590
32.6
9.6
ns
A
μC
IF = 20A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
