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UZTX657

型号:

UZTX657

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

2 页

PDF大小:

50 K

NPN SILICON PLANAR MEDIUM POWER  
ZTX656  
ZTX657  
HIGH VOLTAGE TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
300 Volt VCEO  
0.5 Amp continuous current  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX656  
200  
ZTX657  
300  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
200  
300  
5
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
0.5  
1
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
ZTX656  
ZTX657  
PARAMETER  
SYMBOL  
V(BR)CBO  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
200  
200  
5
300  
300  
5
V
V
V
IC=100µA, IE=0  
IC=10mA, IB=0*  
IE=100µA, IC=0  
VCB=160V, IE=0  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
100  
0.5  
1
nA  
nA  
100  
100  
VCB=200V, IE=0  
Emitter Cut-Off  
Current  
IEBO  
nA  
VEB=3V, IC=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
0.5  
1
V
IC=100mA, IB=10mA*  
IC=100mA, IB=10mA*  
IC=100mA, VCE=5V*  
Base-Emitter  
Saturation Voltage  
V
Base-Emitter  
Turn-On Voltage  
1
1
V
Static Forward  
Current Transfer  
Ratio  
50  
40  
50  
40  
IC=100mA, VCE=5V  
IC=10mA, VCE=5V  
Transition  
Frequency  
fT  
30  
30  
MHz IC=10mA, VCE=20V  
f=20MHz  
3-227  
ZTX656  
ZTX657  
TYPICAL CHARACTERISTICS  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
100  
80  
VCE=5V  
IC/IB=10  
60  
40  
20  
0
0.4  
0.2  
0
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
FE  
C
v I  
h
VCE(sat) v IC  
1.2  
1.0  
1.2  
IC/IB=10  
VCE=5V  
1.0  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
IC - Collector Current (Amps)  
BE(sat)  
IC - Collector Current (Amps)  
C
v I  
V
BE(on)  
V
C
v I  
Single Pulse Test at Tamb=25°C  
1
td  
tr  
tf  
µs  
IB1=IB2=IC/10  
VCE=10V  
ts  
µs  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
ts  
0.1  
3
2
1
D.C.  
1s  
100ms  
10ms  
1.0ms  
300µs  
tf  
0.01  
td  
0.2  
0
tr  
0
0.01  
0.1  
1
0.001  
1
10  
100  
1000  
VCE - Collector Voltage (Volts)  
IC - Collector Current (Amps)  
Safe Operating Area  
Switching Speeds  
3-228  
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