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HYMP264U728-E4

型号:

HYMP264U728-E4

品牌:

HYNIX[ HYNIX SEMICONDUCTOR ]

页数:

18 页

PDF大小:

394 K

64Mx64 / 64Mx72 bits  
Unbuffered DDR2 SDRAM DIMM  
HYMP264U64(L)8/HYMP264U72(L)8  
Revision History  
No.  
0.1  
0.2  
History  
Draft Date  
Jan. 2004  
Apr. 2004  
Remark  
Defined Target Spec.  
Added Pin Capacitance Spec. & IDD Spec.  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.2/ April. 2004  
1
64Mx64 / 64Mx72 bits  
Unbuffered DDR2 SDRAM DIMM  
HYMP264U64(L)8/HYMP264U72(L)8  
DESCRIPTION  
Hynix HYMP264U64(72)8 series is unbuffered 240-pin double data rate 2 Synchronous DRAM Dual In-Line Memory  
Modules (DIMMs) which are organized as 64Mx64(72) high-speed memory arrays. Hynix HYMP264U64(72)8 series  
consists of sixteen(eighteen) 32Mx8 DDR2 SDRAM in 60-Lead FBGA packages. Hynix HYMP264U64(72)8 series  
provide a high performance 8-byte interface in 133.35mm width form factor of industry standard. It is suitable for easy  
interchange and addition.  
Hynix HYMP264U64(72)8 series is designed for high speed of up and offers fully synchronous operations referenced  
to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the ris-  
ing edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of  
it. The data paths are internally pipelined and 4-bit prefetched to achieve very high bandwidth. All input and output volt-  
age levels are compatible with SSTL_1.8. High speed frequencies, programmable latencies and burst lengths allow  
variety of device operation in high performance memory system.  
Hynix HYMP264U64(72)8 series incorporates SPD(serial presence detect). Serial presence detect function is imple-  
mented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify  
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.  
FEATURES  
512MB Unbuffered DDR2 DIMM based on 32Mx8  
DDR2 SDRAM  
Fully differential clock operations (CK & /CK)  
Programmable CAS Latency 3 / 4 /5 supported  
JEDEC standard Double Data Rate2 Synchronous  
DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power  
Supply  
Programmable Burst Length 4 / 8 with both sequen-  
tial and interleave mode  
All inputs and outputs SSTL_1.8 compatible  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
All inputs and outputs are compatible with SSTL_1.8  
interface  
OCD (Off-Chip Driver Impedance Adjustment) and  
ODT (On-Die Termination)  
ORDERING INFORMATION  
Type  
Part No.  
Description  
CL-tRCD-tRP  
Form Factor  
HYMP264U64(L)8-E4  
HYMP264U64(L)8-E3  
HYMP264U64(L)8-C5  
HYMP264U64(L)8-C4  
HYMP264U72(L)8-E4  
HYMP264U72(L)8-E3  
HYMP264U72(L)8-C5  
HYMP264U72(L)8-C4  
4-4-4  
3-3-3  
5-5-5  
4-4-4  
4-4-4  
3-3-3  
5-5-5  
4-4-4  
PC2-3200 (DDR2-400)  
2 rank 512MB  
(64M x 64)  
Unbuffered DIMM  
(None ECC)  
PC2-4300 (DDR2-533)  
PC2-3200 (DDR2-400)  
PC2-4300 (DDR2-533)  
240pin Unbuffered  
DIMM  
133.35 mm x 30,00 mm  
(MO-237)  
2 rank 512MB  
(64M x 72)  
Unbuffered DIMM  
(ECC)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.2/ April. 2004  
2
HYMP264U64(L)8/HYMP264U72(L)8  
Input/Output Functional Description  
Symbol  
Type  
Polarity  
Pin Description  
CK andk /CK are dirrerential clock inputs. All the DDR2 SDRAM addr/cntl  
inputs are sampled on the crossing of positive edge of CK and negative edge  
of /CK. Output(read) data is reference to the crossing of CK and /CK (Both  
directions of crossing)  
CK0~CK2  
/CK0~/CK2  
Differential  
Crossing  
SSTL  
Activates the DDR2 SDRAM CK signal when high and deactivates the CK sig-  
CKE0~CKE1 SSTL Active High nal when low. By deactivating the clocks, CKE low initiates the Power Down  
mode or the Self Refresh mode.  
Enables the associated DDR2 SDRAM command decoder when low and dis-  
ables the command decoder when high. When the command decoder is dis-  
abled, new commands are ignored but previous operations continue. Rank 0 is  
selected by S0; Rank 1 is selected by S1  
/S0~/S1  
SSTL Active Low  
SSTL Active Low  
/RAS, /CAS, /  
WE  
/RAS,/CAS and /WE(ALONG WITH S) define the command being entered.  
Asserts on-die termination for DQ, DM, DQS and DQS signals if enabled via  
the DDR2 SDRAM mode register.  
ODT0~ODT1 SSTL Active High  
Vref  
Supply  
Supply  
SSTL  
Reference voltage for SSTL18 inputs  
Power supplies for the DDR2 SDRAM output buffers to provide improved noise  
immunity. For all current DDR2 unbuffered DIMM designs, VDDQ shares the  
VDDQ  
same power plane as VDD pins.  
BA0~BA1  
A0~A12  
-
-
Selects which DDR2 SDRAM internal bank of four or eight is activated.  
During a Bank Activate command cycle, Address input difines the row  
address(RA0~RA15)  
During a Read or Write command cycle, Address input defines the column  
address when sampled at the cross point of the rising edge of CK and falling  
edge of CK. In addition to the column address, AP is used to invoke autopre-  
charge operation at the end of the burst read or write cycle. If AP is high., auto-  
precharge is selected and BA0-BAn defines the bank to be precharged. If AP is  
low, autoprecharge is disabled. During a Precharge command cycle., AP is  
used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP  
is high, all banks will be precharged regardless of the state of BA0-BAn inputs.  
If AP is low, then BA0-BAn are used to define which bank to precharge.  
Data and Check Bit Input/Output pins.  
SSTL  
DQ0~DQ63,  
CB0~CB7  
SSTL  
-
DM is an input mask signal for write data. Input data is masked when DM is  
sampled High coincident with that input data during a write access. DM is sam-  
pled on both edges of DQS. Although DM pins are input only, the DM loading  
matches the DQ and DQS loading.  
DM0~DM8  
SSTL Active High  
Supply  
Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD  
VDD,VSS  
and VDDQ pins are tied to VDD/VDDQ planes on these modules.  
DQS0~DQS8,  
/DQS0~/  
DQS8  
Data strobe for input and output data. For Rawcards using x16 organized  
DRAMs, DQ0~7 connect to the LDQS pin of the DRAMs and DQ8~15 connect  
to the UDQS pin of the DRAM  
Differential  
SSTL  
crossing  
These signals are tied at the system planar to either VSS or VDD to configure  
SA0~SA2  
SDA  
-
the serial SPD EEPROM.  
This is a bidirectional pin used to transfer data into or out of the SPD  
EEPROM. A resister must be connected to VDD to act as a pull up.  
-
This signal is used to clock data into and out of the SPD EEPROM. A resistor  
may be connected from SCL to VDD to act as a pull up on the system board.  
SCL  
-
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ  
power plane. EEPROM supply is operable from 1.7V to 3.6V.  
VDDSPD  
Supply  
Rev. 0.2/ April. 2004  
3
HYMP264U64(L)8/HYMP264U72(L)8  
PIN CONFIGURATION  
Front Side  
1 pin  
64 pin 65 pin  
120 pin  
184 pin  
240 pin  
185 pin  
121 pin  
Back Side  
Pin Assignment  
Pin  
1
Name  
VREF  
VSS  
DQ0  
DQ1  
VSS  
DQS0  
DQS0  
VSS  
DQ2  
DQ3  
VSS  
DQ8  
DQ9  
VSS  
DQS1  
DQS1  
VSS  
NC  
Pin  
41  
42  
43  
44  
Name  
VSS  
Pin  
81  
82  
83  
84  
Name  
DQ33  
Pin  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
Name  
VSS  
DQ4  
DQ5  
VSS  
DM0  
NC  
Pin  
Name  
Pin  
Name  
VSS  
161 NC(CB4)* 201  
162 NC(CB5)* 202  
2
NC(CB0)*  
NC(CB1)*  
VSS  
VSS  
DQS4  
DQS4  
VSS  
DM4  
NC  
3
163  
VSS  
203  
4
164 NC(DM8)* 204  
VSS  
5
45 NC(DQS8)* 85  
165  
166  
NC  
205  
206  
DQ38  
DQ39  
VSS  
6
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
DQS8  
VSS  
86  
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
97  
98  
99  
100  
101  
DQ34  
DQ35  
VSS  
VSS  
7
VSS  
DQ6  
DQ9  
VSS  
DQ12  
DQ13  
VSS  
DM1  
NC  
167 NC(CB6)* 207  
168 NC(CB7)* 208  
8
NC(CB2)*  
NC(CB3)*  
VSS  
DQ44  
DQ45  
VSS  
9
DQ40  
DQ41  
VSS  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
181  
VSS  
VDDQ  
CKE1  
VDD  
(A15)  
(A14)  
VDDQ  
A12  
209  
210  
211  
212  
213  
214  
215  
216  
217  
218  
219  
220  
221  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
VDDQ  
CKE0  
VDD  
DM5  
NC  
DQS5  
DQS5  
VSS  
VSS  
(BA2)  
NC  
DQ46  
DQ47  
VSS  
DQ42  
VDQ43  
VSS  
VDDQ  
A11  
VSS  
NC  
A9  
DQS2  
DQ53  
VSS  
A7  
DQ48  
DQ49  
VSS  
NC  
VDD  
A8  
NC  
VDD  
VSS  
DQ14  
DQ15  
VSS  
DQ10  
A5  
A6  
CK2  
A4  
SA2  
VDDQ  
CK2  
22  
DQ11  
62  
VDDQ  
102 NC,TEST1 142  
VSS  
182  
A3  
222  
VSS  
* The pin names in parenthesises are applied to DIMM with ECC only.  
Rev. 0.2/ April. 2004  
4
HYMP264U64(L)8/HYMP264U72(L)8  
Pin Assignment(Continued)  
Pin  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
Name  
VSS  
Pin  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
Name  
A2  
Pin  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
Name  
VSS  
Pin  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
Name  
DQ20  
DQ21  
VSS  
Pin  
183  
184  
185  
186  
187  
188  
189  
190  
191  
192  
193  
194  
195  
196  
197  
198  
199  
200  
Name  
A1  
Pin  
223  
224  
225  
226  
227  
228  
229  
230  
231  
232  
233  
234  
235  
236  
237  
238  
239  
240  
Name  
DM6  
DQ16  
DQ17  
VSS  
VDD  
VSS  
DQS6  
DQS6  
VSS  
VDD  
CK0  
NC  
VSS  
VSS  
DM2  
NC  
CK0  
DQ54  
DQ55  
VSS  
DQS2  
DQS2  
VSS  
VDD  
NC  
DQ50  
DQ51  
VSS  
VDD  
A0  
VSS  
VDD  
A10/AP  
BA0  
DQ22  
DQ23  
VSS  
VDD  
BA1  
DQ60  
DQ61  
VSS  
DQ18  
DQ19  
VSS  
DQ56  
DQ57  
VSS  
VDDQ  
RAS  
S0  
VDDQ  
WE  
DQ28  
DQ29  
VSS  
DM7  
DQ24  
DQ25  
VSS  
DQS7  
DQS7  
VSS  
NC  
CAS  
VDDQ  
S1  
VDDQ  
ODT0  
(A13)  
VDD  
VSS  
DQ36  
DQ37  
VSS  
DM3  
NC  
DQ62  
DQ63  
VSS  
DQS3  
DQS3  
VSS  
DQ58  
DQ59  
VSS  
ODT1  
VDDQ  
VSS  
VSS  
DQ30  
DQ31  
VSS  
VDDSPD  
SA0  
DQ26  
DQ27  
SDA  
DQ32  
SCL  
SA1  
*NC=No connect; RFU=Reserved Future Use  
Note :  
1. The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products(DIMMs).  
2. NC Pins should not be connected to anything, including bussing within the NC group.  
3. Pins 54,173,174 and 196 are not connected on this modules and are reserved for other modules.  
Rev. 0.2/ April. 2004  
5
HYMP264U64(L)8/HYMP264U72(L)8  
FUNCTIONAL BLOCK DIAGRAM  
/S1  
/S0  
/DQS0  
DQS0  
DM0  
/DQS4  
DQS4  
DM4  
DM  
DM  
DM  
DM  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ32  
DQ33  
DQ34  
DQ35  
D0  
D9  
D4  
D13  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
/DQS1  
/DQS5  
DQS1  
DM1  
DQS5  
DM5  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
DQ8  
DQ40  
DQ9  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
D1  
D14  
D10  
D5  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
/DQS2  
/DQS6  
DQS2  
DM2  
DQS6  
DM6  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
DQ16  
DQ48  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
D2  
D11  
D6  
D15  
DM  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
/DQS3  
/DQS7  
DQS3  
DM3  
DQS7  
DM7  
DM  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
/CS DQS /DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
DQ24  
DQ56  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
D3  
D12  
D7  
D16  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
/DQS8  
DQS8  
DM8  
DM  
/CS DQS /DQS  
/CS DQS /DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
CB0  
Serial  
PD  
CB1  
CB2  
CB3  
VDD SPD  
VDD/VDDQ  
VREF  
D8  
D17  
DO-D17  
DO-D17  
DO-D17  
CB4  
CB5  
CB6  
CB7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
VSS  
ECC modules only  
Notes :  
BA0-BA1  
A0-A12  
CKE0  
SDRAMS D0-D17  
SDRAMS D0-D17  
SDRAMS D0-D8  
SDRAMS D8-D15  
SDRAMS D0-D17  
SCL  
SCL  
WP  
1. DQ-to-I/O wiring shown as recommanded but may be changed.  
2. DQ,DQS,/DQS,ODT,DM,CKE,/S relationships must be maintained as  
shown.  
3. DQ,DM,DQS,/DQS resistors;Refer to associated topology diagram.  
4. BAx,Ax,/RAS,/CAS,/WE resistors: Refer to associate topology diagram  
5. Refer to the appropriate clock wiring topology under the DIMM wiring  
details section of this document.  
SDA  
Serial PD  
CKE1  
/CAS  
/RAS  
A0  
SA0  
A1  
A1  
SDRAMS D0-D17  
SDRAMS D0-D17  
SDRAMS D0-D8  
SDRAMS D9-D17  
SA1  
SA2  
/WE  
ODT0  
ODT1  
Rev. 0.2/ April. 2004  
6
HYMP264U64(L)8/HYMP264U72(L)8  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Operating temperature(ambient)  
DRAM Component Case Temperature Range  
Operating Humidity(relative)  
Symbol  
TOPR  
Value  
0 ~ +55  
Unit  
Note  
oC  
1
oC  
%
2
1
1
TCASE  
HOPR  
0 ~+95  
10 to 90  
-50 ~ +100  
5 to 95  
oC  
oC  
Storage Temperature  
TSTG  
HSTG  
Storage Humidity(without condensation)  
Barometric Pressure(operating & storage)  
1
PBAR  
105 to 69  
K Pascal  
1,3  
Note :  
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device  
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con  
ditions for extended periods may affect reliablility.  
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to  
tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.  
3. Up to 9850 ft.  
Operating Condtions(AC&DC)  
DC OPERATING CONDITIONS (SSTL_1.8)  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
VDD  
1.7  
1.7  
1.9  
1.9  
V
V
V
V
V
Power Supply Voltage  
VDDQ  
VREF  
VDDSPD  
VTT  
1
2
Input Reference Voltage  
EEPROM Supply Voltage  
0.49 x VDDQ  
1.7  
0.51 x VDDQ  
3.6  
VREF+0.04  
3
VREF-0.04  
Termination Voltage  
Note :  
1. VDDQ must be less than or equal to VDD  
.
2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)  
3. VTT of transmitting device must track VREF of receiving device.  
Input DC Logic Level  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
Input High Voltage  
Input Low Voltage  
VIH(DC)  
VIL(DC)  
VREF + 0.125  
-0.30  
VDDQ + 0.3  
V
V
VREF - 0.125  
Rev. 0.2/ April. 2004  
7
HYMP264U64(L)8/HYMP264U72(L)8  
Input AC Logic Level  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
AC Input logic High  
AC Input logic Low  
VIH(AC)  
VIL(AC)  
VREF + 0.250  
-
-
V
V
VREF - 0.250  
AC Input Test Conditions  
Symbol  
VREF  
Condition  
Input reference voltage  
Value  
Units  
Notes  
0.5 * VDDQ  
1.0  
V
1
1
VSWING(MAX)  
SLEW  
Input signal maximum peak to peak swing  
Input signal minimum slew rate  
V
1.0  
V/ns  
2, 3  
Note:  
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device  
under test.  
2. The input signal minimum slew rate is to be maintained over the range from VIL(dc) max to VIH(ac) min for rising  
edges and the range from VIH(dc) min to VIL(ac) max for falling edges as shown in the below figure.  
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and  
VIH(ac) to VIL(ac) on the negative transitions.  
Start of Rising Edge Input Timing  
Start of Falling Edge Input Timing  
V
V
V
V
V
V
V
DDQ  
IH(ac)  
IH(dc)  
REF  
min  
min  
V
SWING(MAX)  
max  
max  
IL(dc)  
IL(ac)  
SS  
delta TF  
V
delta TR  
Rising Slew =  
V
min - V  
max  
min -  
V
max  
IL(ac)  
IH(ac)  
IL(dc)  
IH(dc)  
Falling Slew =  
delta TR  
delta TF  
< Figure : AC Input Test Signal Waveform >  
Rev. 0.2/ April. 2004  
8
HYMP264U64(L)8/HYMP264U72(L)8  
Differential Input AC logic Level  
Note  
Symbol  
Parameter  
ac differential input voltage  
ac differential cross point voltage  
Min.  
Max.  
Units  
1
VID (ac)  
0.5  
VDDQ + 0.6  
V
2
VIX (ac)  
0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175  
V
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,  
LDQS, UDQS and UDQS.  
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as  
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The  
minimum value is equal to VIH(DC) - V IL(DC).  
V
DDQ  
V
TR  
Crossing point  
V
ID  
V
V
IX or OX  
V
CP  
V
SSQ  
< Differential signal levels >  
Note:  
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal  
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).  
The minimum value is equal to V IH(AC) - V IL(AC).  
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to  
track variations in VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.  
Differential AC output parameters  
Symbol  
Parameter  
Min.  
Max.  
Units  
Note  
VOX (ac)  
0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125  
V
1
ac differential cross point voltage  
Note:  
1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected  
to track variations in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.  
Rev. 0.2/ April. 2004  
9
HYMP264U64(L)8/HYMP264U72(L)8  
Output Buffer Levels  
Output AC Test Conditions  
Symbol  
VOH  
Parameter  
SSTL_18 Class II  
VTT + 0.603  
VTT - 0.603  
Units Notes  
Minimum Required Output Pull-up under AC Test Load  
Maximum Required Output Pull-down under AC Test Load  
Output Timing Measurement Reference Level  
V
V
VOL  
VOTR  
0.5 * VDDQ  
V
1
1. The VDDQ of the device under test is referenced.  
Output DC Current Drive  
Symbol  
IOH(dc)  
IOL(dc)  
Parameter  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
SSTl_18 Class II  
Units  
mA  
Notes  
1, 3, 4  
2, 3, 4  
- 13.4  
13.4  
mA  
1.  
V
DDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ  
and VDDQ - 280 mV.  
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.  
3. The dc value of VREF applied to the receiving device is set to VTT  
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device  
drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an  
SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see Section  
3.3) along a 21 ohm load line to define a convenient driver current for measurement.  
OCD defalut characteristics  
Description  
Parameter  
Min  
12.6  
0
Nom  
Max  
23.4  
4
Unit  
ohms  
ohms  
V/ns  
Notes  
1,2  
Output impedance  
18  
Pull-up and pull-down mismatch  
Output slew rate  
1,2,3  
Sout  
1.5  
-
5
1,4,5,6  
Note:  
1. Absolute Specifications (0°C TCASE 95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)  
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh  
must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condi-  
tion for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of  
VOUT between 0V and 280mV.  
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.  
4. Slew rate measured from vil(ac) to vih(ac).  
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured  
from AC to AC.  
Rev. 0.2/ April. 2004  
10  
HYMP264U64(L)8/HYMP264U72(L)8  
PIN CAPACITANCE (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )  
64M x 64  
64M x 72  
Parameter  
Pin  
Symbol  
Unit  
Min  
Max  
Min  
Max  
Input Capacitance  
Input Capacitance  
Input Capacitance  
Input Capacitance  
CK0, /CK0  
CKE0, /CS  
CCK  
CI1  
25  
68  
58  
9
38  
91  
96  
13  
25  
70  
62  
9
38  
92  
pF  
pF  
pF  
pF  
Address, /RAS, /CAS, /WE  
DQ,DM,DQS, /DQS  
CI2  
100  
13  
CIO  
Note :  
1. Pins not under test are tied to GND.  
2. These value are guaranteed by design and tested on a sample basis only.  
IDD Specifications(max.)  
64Mx64  
64Mx72  
Parameter  
Symbol  
Unit  
PC2 3200 PC2 4300 PC2 5300 PC2 3200 PC2 4300 PC2 5300  
Operating one bank  
active-precharge current  
IDD0  
IDD1  
1160  
1240  
80  
1280  
1360  
80  
1400  
1480  
80  
1305  
1395  
90  
1440  
1530  
90  
1575  
1665  
90  
mA  
mA  
mA  
mA  
Operating one bank active-  
read-precharge current  
Precharge power-down  
current  
IDD2P  
IDD2Q  
Precharge quiet standby  
current  
520  
560  
640  
585  
630  
720  
Precharge standby current  
Active power-down current  
Active Standby Current  
IDD2N  
IDD3P(F)  
IDD3P(S)  
IDD3N  
640  
480  
320  
840  
720  
480  
320  
920  
800  
480  
720  
540  
360  
945  
810  
540  
900  
540  
mA  
mA  
mA  
mA  
320  
360  
360  
1000  
1035  
1125  
Operating burst read  
current  
IDD4R  
1680  
1880  
2080  
1890  
2115  
2340  
mA  
Operating Current  
IDD4W  
IDD5B  
IDD6  
1720  
1520  
64  
1920  
1640  
64  
2120  
1760  
64  
1935  
1710  
72  
2160  
1845  
72  
2385  
1980  
72  
mA  
mA  
mA  
mA  
Burst auto refresh current  
Self Refresh Current  
IDD6(L)  
32  
32  
32  
36  
36  
36  
Operating bank interleave  
read current  
IDD7  
2320  
2440  
2560  
2610  
2745  
2880  
mA  
Rev. 0.2/ April. 2004  
11  
HYMP264U64(L)8/HYMP264U72(L)8  
IDD Meauarement Conditions  
Symbol  
Conditions  
Units  
t
t
t
t
t
t
Operating one bank active-precharge current; CK = CK(IDD), RC = RC(IDD), RAS = RAS-  
min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCH-  
ING;Data bus inputs are SWITCHING  
IDD0  
IDD1  
mA  
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;  
t
t
t
t
t
t
t
t
CK = CK(IDD), RC = RC (IDD), RAS = RASmin(IDD), RCD = RCD(IDD) ; CKE is HIGH, CS is  
mA  
HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as  
IDD4W  
t
t
Precharge power-down current ; All banks idle ; CK = CK(IDD) ; CKE is LOW ; Other control and  
IDD2P  
IDD2Q  
IDD2N  
mA  
mA  
address bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge quiet standby current;All banks idle; CK = CK(IDD);CKE is HIGH, CS is HIGH; Other  
control and address bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge standby current; All banks idle; CK = CK(IDD); CKE is HIGH, CS is HIGH; Other con-  
trol and address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
mA  
mA  
mA  
t
t
Active power-down current; All banks open; CK = CK(IDD);  
CKE is LOW; Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Fast PDN Exit MRS(12) = 0  
IDD3P  
IDD3N  
IDD4W  
Slow PDN Exit MRS(12) = 1  
t
t
t
t
t
t
Active standby current; All banks open; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD);  
CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are  
SWITCHING; Data bus inputs are SWITCHING  
mA  
mA  
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL  
t
t
t
t
t
t
= 0; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between  
valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL =  
t
t
t
t
t
t
CL(IDD), AL = 0; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is  
HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as  
IDD4W  
IDD4R  
mA  
t
t
t
Burst refresh current; CK = CK(IDD); Refresh command at every RFC(IDD) interval; CKE is  
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCH-  
ING; Data bus inputs are SWITCHING  
IDD5B  
IDD6  
mA  
mA  
Self refresh current; CK and CK at 0V; CKE 0.2V; Other control  
and address bus inputs are FLOATING; Data bus inputs are  
FLOATING  
Normal  
Low Power  
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL =  
t
t
t
t
t
t
t
t
t
CL(IDD), AL = RCD(IDD)-1* CK(IDD); CK = CK(IDD), RC = RC(IDD), RRD = RRD(IDD), RCD  
IDD7  
t
mA  
= 1* CK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STA-  
BLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed  
timing conditions  
Note:  
1. IDD specifications are tested after the device is properly initialized  
2. Input slew rate is specified by AC Parametric Test Condition  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met  
with all combinations of EMRS bits 10 and 11.  
5. Definitions for IDD  
LOW is defined as Vin VILAC(max)  
HIGH is defined as Vin VIHAC(min)  
STABLE is defined as inputs stable at a HIGH or LOW level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control sig-  
nals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not  
including masks or strobes.  
Rev. 0.2/ April. 2004  
12  
HYMP264U64(L)8/HYMP264U72(L)8  
Electrical Characteristics & AC Timings  
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin  
Speed  
Bin(CL-tRCD-tRP)  
Parameter  
CAS Latency  
tRCD  
DDR2-533(C4)  
DDR2-533(C5)  
DDR2-400(C3)  
DDR2-400(C4)  
Unit  
4-4-4  
min  
4
5-5-5  
min  
3-3-3  
min  
3
4-4-4  
min  
4
5
ns  
ns  
ns  
ns  
ns  
15  
18.75  
18.75  
63.75  
45  
15  
20  
tRP  
15  
15  
20  
tRC  
60  
55  
65  
tRAS  
45  
40  
45  
AC Timing Parameters by Speed Grade  
DDR2-400  
DDR2-533  
Parameter  
Symbol  
Unit  
Note  
Min  
-600  
-500  
0.45  
0.45  
Max  
600  
Min  
-500  
-500  
0.45  
0.45  
min  
(tCL,tCH)  
3750  
350  
Max  
500  
Data-Out edge to Clock edge Skew  
DQS-Out edge to Clock edge Skew  
Clock High Level Width  
tAC  
tDQSCK  
tCH  
ps  
ns  
500  
450  
0.55  
0.55  
0.55  
0.55  
CK  
CK  
Clock Low Level Width  
tCL  
min  
(tCL,tCH)  
Clock Half Period  
tHP  
-
-
ns  
System Clock Cycle Time  
tCK  
tDH  
tDS  
5000  
400  
400  
0.6  
8000  
8000  
ps  
ps  
DQ and DM input hold time  
-
-
-
-
-
-
1
1
DQ and DM input setup time  
350  
ps  
Control & Address input Pulse Width for each input  
tIPW  
0.6  
tCK  
DQ and DM input pulse witdth for each input pulse  
width for each input  
tDIPW  
tHZ  
0.35  
-
-
0.35  
-
-
tCK  
ps  
tAC max  
tAC max  
Data-out high-impedance window from CK, /CK  
DQS low-impedance time from CK/CK  
DQ low-impedance time from CK/CK  
DQS-DQ skew for DQS and associated DQ signals  
DQ hold skew factor  
tLZ(DQS)  
tLZ(DQ)  
tDQSQ  
tQHS  
tAC min  
tAC max  
tAC min  
tAC max  
ps  
ps  
2*tAC min  
tAC max  
2*tAC min  
tAC max  
-
350  
-
300  
ps  
-
tHP - tQHS  
WL - 0.25  
0.35  
450  
-
tHP - tQHS  
WL - 0.25  
0.35  
400  
ps  
DQ/DQS output hold time from DQS  
Write command to first DQS latching transition  
DQS input high pulse width  
tQH  
-
-
ps  
tDQSS  
tDQSH  
tDQSL  
tDSS  
WL + 0.25  
WL + 0.25  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
-
-
DQS input low pulse width  
0.35  
-
0.35  
-
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
0.2  
-
0.2  
-
tDSH  
0.2  
-
-
0.2  
-
-
tMRD  
2
2
tWPST  
tWPRE  
0.4  
0.6  
-
0.4  
0.6  
-
Write preamble  
0.25  
0.25  
Rev. 0.2/ April. 2004  
13  
HYMP264U64(L)8/HYMP264U72(L)8  
- continued -  
DDR2 400  
DDR2 533  
Parameter  
Symbol  
Unit  
Note  
Min  
Max  
Min  
Max  
Address and control input hold time  
Address and control input setup time  
Read preamble  
tIH  
tIS  
600  
600  
0.9  
0.4  
-
500  
500  
0.9  
0.4  
-
ps  
ps  
-
-
tRPRE  
tRPST  
1.1  
0.6  
1.1  
0.6  
tCK  
tCK  
Read postamble  
Auto-Refresh to Active/Auto-Refresh command  
period  
tRFC  
tRRD  
75  
-
-
75  
-
-
ns  
ns  
Active to active command period for 1KB page  
size(x4,x8)  
7.5  
7.5  
CAS to CAS command delay  
Write recovery time  
tCCD  
tWR  
2
2
tCK  
ns  
15  
-
-
15  
-
-
(tWR/tCK)  
+
(tRP/tCK)  
(tWR/tCK)  
+
(tRP/tCK)  
Auto Precharge Write Recovery + Precharge Time  
Write to Read Command Delay  
tDAL  
tCK  
ns  
tWTR  
10  
-
7.5  
-
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tRTP  
tXSNR  
tXSRD  
7.5  
tRFC + 10  
200  
7.5  
tRFC + 10  
200  
ns  
ns  
-
-
-
-
tCK  
Exit precharge power down to any non-read  
command  
tXP  
2
2
2
2
tCK  
tCK  
tCK  
Exit active power down to read command  
tXARD  
tXARDS  
Exit active power down to read command  
(Slow exit, Lower power)  
6 - AL  
6 - AL  
CKE minimum pulse width  
(high and low pulse width)  
t
3
3
tCK  
CKE  
t
ODT turn-on delay  
ODT turn-on  
2
2
2
2
tCK  
ns  
AOND  
t
tAC(min)  
tAC(max)+1  
tAC(min)  
tAC(max)+1  
AON  
2tCK+tAC(ma  
x)+1  
2tCK+tAC(ma  
x)+1  
t
ODT turn-on(Power-Down mode)  
ODT turn-off delay  
tAC(min)+2  
2.5  
tAC(min)+2  
2.5  
ns  
tCK  
ns  
AONPD  
t
2.5  
2.5  
AOFD  
tAC(max)+  
0.6  
tAC(max)+  
0.6  
t
ODT turn-off  
tAC(min)  
tAC(min)  
AOF  
2.5tCK+tAC  
(max)+1  
2.5tCK+tAC  
(max)+1  
tAOFPD  
ns  
ODT turn-off (Power-Down mode)  
tAC(min)+2  
tAC(min)+2  
ODT to power down entry latency  
ODT power down exit latency  
OCD drive mode output delay  
tANPD  
tAXPD  
tOIT  
3
8
0
3
8
0
tCK  
tCK  
ns  
12  
12  
Minimum time clocks remains ON after CKE  
asynchronously drops LOW  
ns  
tDelay  
tIS+tCK+tIH  
tIS+tCK+tIH  
us  
us  
tREFI  
tREFI  
2
3
-
-
7.8  
3.9  
-
-
7.8  
3.9  
Average periodic Refresh Interval  
Note :  
1. For details and notes, please refer to the relevant HYNIX component datasheet(HY5PS56821(L)F).  
2. C TCASE ≤ 85°C  
3. 85°C TCASE ≤ 95°C  
Rev. 0.2/ April. 2004  
14  
HYMP264U64(L)8/HYMP264U72(L)8  
PACKAGE OUTLINE  
Front  
133.35  
Side  
4.00 max.  
ECC(x72) only.  
4.0±0.1  
30.0  
Detail-A  
Detail-B  
5.175  
5.175  
1.27 ± 0.10  
63.0  
55.0  
5.0  
Back  
ECC(x72) only.  
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
0.8  
± 0.05  
1.50  
± 0.10  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 0.2/ April. 2004  
15  
SERIAL PRESENCE DETECT  
SPD SPECIFICATION  
64Mx64(72) Unbuffered DDR2 DIMM  
Rev. 0.2/ April. 2004  
16  
HYMP264U64(L)8/HYMP264U72(L)8  
Bin Sort : E3(DDR2 400 3-3-3), E4(DDR2 400 4-4-4),  
C4(DDR2 533 4-4-4), C5(DDR2 533 5-5-5)  
SERIAL PRESENCE DETECT  
Function Supported  
64Mx64  
Hexa Value  
Speed  
Grade  
Byte#  
Function Description  
Note  
64Mx72 64Mx64 64Mx72  
0
1
2
3
4
5
6
7
8
9
Number of bytes utilized by module manufacturer  
Total number of Bytes in SPD device  
Fundamental memory type  
all  
all  
128 Bytes  
256 Bytes  
DDR2 SDRAM  
13  
80  
08  
08  
0D  
0A  
61  
40  
00  
05  
50  
3D  
60  
50  
00  
82  
08  
08  
00  
0C  
04  
38  
00  
02  
00  
01  
50  
3D  
60  
50  
50  
00  
60  
00  
3C  
50  
4B  
1E  
3C  
50  
4B  
28  
2D  
40  
60  
50  
60  
50  
40  
35  
40  
35  
3C  
28  
1E  
1E  
00  
00  
50  
37  
3C  
41  
3F  
48  
all  
Number of row address on this assembly  
Number of column address on this assembly  
Number of DIMM ranks  
all  
1
1
all  
10  
all  
30.0mm/planar/2ranks  
64 Bits  
-
72 Bits  
Module data width  
all  
Module data width (continued)  
all  
02  
Voltage Interface level of this assembly  
DDR SDRAM cycle time at CL=5  
all  
SSTL 1.8V  
5.0 ns  
E3,E4  
C4,C5  
E3,E4  
C4,C5  
all  
2
2
3.75 ns  
+/-0.6ns  
+/-0.5ns  
None  
10  
DDR SDRAM access time from clock (tAC)  
ECC  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DIMM Configuration type  
Refresh Rate and Type  
all  
7.8us & Self refresh  
x8  
Primary DDR SDRAM width  
Error Checking DDR SDRAM data width  
Reserved  
all  
all  
x8  
-
Burst Lengths Supported  
Number of banks on each SDRAM Device  
CAS latency supported  
all  
all  
all  
4,8  
4
3, 4, 5  
Reserved  
-
DIMM Type  
all  
all  
Regular UDIMM  
Normal  
Supports weak driver  
5.0ns  
DDR SDRAM module attributes  
DDR SDRAM device attributes : General  
all  
E3,E4,C5  
C4  
23  
24  
25  
26  
DDR SDRAM cycle time at CL=4(tCK)  
2
2
2
2
3.75ns  
+/-0.6ns  
+/-0.5ns  
5.0ns  
E3,E4,C5  
C4  
DDR SDRAM access time from clock at CL=4(tAC)  
DDR SDRAM cycle time at CL=3(tCK)  
E3,C4  
E4,C5  
E3,C4  
E4,C5  
E3, C4  
E4  
Undefined  
+/-0.6ns  
Undefined  
15ns  
DDR SDRAM access time from clock at CL=3(tAC)  
27  
28  
29  
Minimum Row Precharge Time(tRP)  
20ns  
C5  
18.75ns  
7.5ns  
Minimum Row Activate to Row Active delay(tRRD)  
Minimum RAS to CAS delay(tRCD)  
all  
E3, C4  
E4  
15ns  
20ns  
C5  
18.75ns  
40ns  
E3  
30  
31  
32  
Minimum active to precharge time(tRAS)  
Module rank density  
E4,C4,C5  
all  
45ns  
256MB  
0.6ns  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
all  
Address and command input setup time before clock (tIS)  
0.5ns  
0.6ns  
33  
34  
Address and command input hold time after clock (tIH)  
Data input setup time before clock (tDS)  
0.5ns  
0.40ns  
0.35ns  
0.40ns  
0.35ns  
15ns  
35  
36  
37  
Data input hold time after clock (tDH)  
Write recovery time(tWR)  
E3, E4  
C4, C5  
all  
10ns  
Internal write to read command delay(tWTR)  
7.5ns  
38  
39  
Internal read to precharge command delay(tRTP)  
Memory analysis probe characteristics  
7.5ns  
Undefined  
Undefined  
tRC extended  
55ns  
E3,E4,C4  
C5  
40  
Extension of byte 41 tRC and byte 42 tRFC  
E3  
C4  
60ns  
41  
Minimum active / auto-refresh time ( tRC)  
E4  
65ns  
C5  
63.75ns  
Rev. 0.2/ April. 2004  
17  
HYMP264U64(L)8/HYMP264U72(L)8  
- continued -  
Function Supported  
64Mx64  
Hexa Value  
Speed  
Grade  
Byte#  
Function Description  
Note  
64Mx72 64Mx64 64Mx72  
Minimum auto-refresh to active/auto-refresh  
command period(tRFC)  
42  
43  
44  
all  
75ns  
4B  
Maximum cycle time (tCK max)  
all  
8.0ns  
80  
23  
1E  
2D  
28  
00  
00  
10  
54  
DB  
CE  
B2  
AD  
00  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
0.35ns  
Maximim DQS-DQ skew time(tDQSQ)  
0.30ns  
0.45ns  
45  
46  
Maximum read data hold skew factor(tQHS)  
PLL Relock time  
0.40ns  
No PLL  
Undefined  
47~61 Superset information(may be used in future)  
-
66  
ED  
E0  
C4  
62  
63  
64  
SPD Revision code  
1.0  
E3  
E4  
C4  
C5  
-
-
-
Checksum for Bytes 0~62  
Manufacturer JEDEC ID Code  
-
-
-
-
Hynix JEDEC ID  
-
-
65~71 --------- Manufacturer JEDEC ID Code  
Hynix(Korea Area)  
HSA(United States Area)  
HSE(Europe Area)  
HSJ(Japan Area)  
Singapore  
0*  
1*  
2*  
3*  
4*  
5*  
72  
Manufacturing location  
6
Asia Area  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
Manufacture part number (DDR2 SDRAM)  
---------Manufacture part number(Memory density)  
Manufacture part number(Module Depth)  
H
Y
48  
59  
4D  
50  
32  
33  
32  
55  
36  
34  
38  
2D  
45  
43  
33  
34  
35  
20  
7
37  
32  
M
P
2
3
------- Manufacture part number(Module Depth)  
Manufacture part number(Module type)  
2
U
6
Manufacture part number(Data width)  
-------Manufacture part number(Data width)  
Manufacture part number(Component configuration)  
Manufacture part number(Hyphen)  
4
2
8
‘-’  
E
E3, E4  
C4, C5  
E3  
85  
Manufacture part number(Minimum cycle time)  
C
3
86  
-------Manufacture part number(Minimum cycle time)  
E4,C4  
C5  
4
5
87~90 Manufacture part number(T.B.D)  
Blank  
91  
92  
93  
94  
Manufacture revision code(for Component)  
Manufacture revision code (for PCB)  
Manufacturing date(Year)  
3
3
4
5
5
Manufacturing date(Week)  
95~98 Module serial number  
99~127 Manufacturer specific data (may be used in future)  
128~255 Open for customer use  
Undefined  
Undefined  
00  
00  
Note :  
1. The bank address is excluded  
2. This value is based on the component specification  
3. These bytes are programmed by code of date week & date year  
4. These bytes apply to Hynix’s own Module Serial Number System  
5. These bytes undefined and coded as ‘00h’  
6. Refer to Hynix Web Site  
Byte 83~84, Low Power Part  
Speed  
Grade  
Hexa  
Value  
Byte #  
Function Description  
Function Supported  
Note  
83  
84  
Manufacture part number(Low power part)  
L
8
4C  
38  
Manufacture part number(Component Configuration)  
Rev. 0.2/ April. 2004  
18  
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