IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
11
15
19
S
Ciss
Coss
Crss
10.4
655
155
nF
pF
pF
td(on)
tr
td(off)
tf
50
133
127
44
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Qg(on)
Qgs
320
64
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
198
RthJC
RthCS
0.23 C/W
C/W
(TO-247&TO-3P)
0.25
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s
320
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
40
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, -di/dt = 100A/μs, VR = 100V
160
1.5
V
500
ns
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
