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IXTU4N60P

型号：

IXTU4N60P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

838 K

下载PDF手册
PolarTM  
Power MOSFET  
IXTU4N60P  
IXTY4N60P  
IXTA4N60P  
IXTP4N60P  
VDSS = 600V  
ID25 = 4A  
RDS(on) 2  
TO-251 (IXTU)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
4
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
10  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
4
A
OBSOLETE  
EAS  
150  
mJ  
IXTY4N60P  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
G
D
D (Tab)  
S
90  
IXTA4N60P  
TJ  
-55 ... +150  
C  
C  
C  
IXTP4N60P  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
150  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
3.0  
5.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
1
TJ = 125C  
50 A  
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2
  
High Voltage Pulse Power  
Applications  
DS99423F(6/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTU4N60P IXTY4N60P  
IXTA4N60P IXTP4N60P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
2.8  
4.6  
S
Ciss  
Coss  
Crss  
635  
65  
pF  
pF  
pF  
5.7  
Qg(on)  
Qgs  
13  
6
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
4
td(on)  
tr  
td(off)  
tf  
25  
10  
50  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 30(External)  
RthJC  
RthCS  
1.4 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
OBSOLETE  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max  
(TJ = 25C, Unless Otherwise Specified)  
IXTY4N60P  
IS  
VGS = 0V  
4
A
IXTA4N60P  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
12  
A
1.5  
V
IXTP4N60P  
IF = 4A, -di/dt = 100A/μs, VR = 100V  
500  
ns  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTU4N60P IXTY4N60P  
IXTA4N60P IXTP4N60P  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
6V  
6V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.2  
2.8  
2.4  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
OBSOLETE  
IXTY4N60P  
I
= 4A  
D
2.0  
I
= 2A  
D
1.6  
6V  
5V  
IXTA4N60P  
1.2  
IXTP4N60P  
0.8  
0.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
o
T
= 125 C  
J
o
T = 25 C  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTU4N60P IXTY4N60P  
IXTA4N60P IXTP4N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
6
5
4
3
2
1
0
o
T
J
= - 40 C  
10  
8
V
= 10V  
DS  
V
= 10V  
DS  
o
25 C  
6
o
125 C  
o
T
J
= 125 C  
o
25 C  
4
o
- 40 C  
2
0
0
1
2
3
4
5
6
7
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
12  
10  
8
V
= 300V  
DS  
I
= 2A  
D
8
I
= 10mA  
G
OBSOLETE  
7
6
IXTY4N60P  
5
6
4
IXTA4N60P  
o
T = 125 C  
J
4
3
o
T = 25 C  
J
IXTP4N60P  
2
2
1
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
2
4
6
8
10  
12  
14  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1,000  
100  
10  
2
1
C
iss  
C
C
oss  
0.1  
= 1 MHz  
f
rss  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_4N60P(23) 6-20-17-A  
IXTU4N60P IXTY4N60P  
IXTA4N60P IXTP4N60P  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
E
oP  
A1  
4
L1  
D1  
D
H1  
A1  
A2  
Q
L2  
H
H
A1  
L4  
1
3
2
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b2  
b
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
3X b  
3X b2  
e
c
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
OBSOLETE  
IXTY4N60P  
IXTA4N60P  
IXTP4N60P  
TO-251 OUTLINE  
© 2017 IXYS CORPORATION, All Rights Reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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