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HYMP564S64LP6-C4

型号:

HYMP564S64LP6-C4

品牌:

HYNIX[ HYNIX SEMICONDUCTOR ]

页数:

17 页

PDF大小:

553 K

64Mx64 bits  
DDR2 SDRAM SO-DIMM  
HYMP564S64(L)P6  
Revision History  
No.  
History  
Date  
Remark  
1) Defined target spec.  
2) Corrected typo in pin assignment table(#140)  
3) Corrected Pin assignment table  
July 2004  
Aug. 2004  
0.1  
Designated Pin Cap. Spec.  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Aug. 2004  
1
64Mx64 bits  
DDR2 SDRAM SO-DIMM  
HYMP564S64(L)P6  
DESCRIPTION  
Hynix HYMP564S64P6 series is unbuffered 200-pin double data rate 2 Synchronous DRAM Small Outline Dual In-Line Memory Mod-  
ules (DIMMs) which are organized as 64Mx64 high-speed memory arrays. Hynix HYMP564S64P6 series consists of eight 32Mx16  
DDR2 SDRAMs in 84 ball FBGA chipsize packages. Hynix HYMP564S64P6 series provide a high performance 8-byte interface in  
67.60mmX 30.00mm form factor of industry standard. It is suitable for easy interchange and addition.  
Hynix HYMP564S64P6 series is designed for high speed and offers fully synchronous operations referenced to both rising and falling  
edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data  
strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 4-  
bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_1.8. High speed frequen-  
cies, programmable latencies and burst lengths allow variety of device operation in high performance memory system.  
Hynix HYMP564S64P6 series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial  
2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM type, capacity and other the  
information of DIMM and the last 128 bytes are available to the customer.  
FEATURES  
512MB (64M x 64) Slim Outline DDR2 DIMM based on  
32Mx16 DDR2 SDRAM  
Fully differential clock operations (CK & /CK)  
Programmable CAS Latency 3 / 4 /5 supported  
JEDEC standard Double Data Rate2 Synchronous DRAMs  
(DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply  
Programmable Burst Length 4 / 8 with both sequential and  
interleave mode  
All inputs and outputs are compatible with SSTL_1.8 inter-  
face  
All inputs and outputs SSTL_1.8 compatible  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
OCD (Off-Chip Driver Impedance Adjustment) and ODT  
(On-Die Termination)  
ORDERING INFORMATION  
Type  
Part No.  
Description  
CL-tRCD-tRP  
Form Factor  
HYMP564S64(L)P6-E4  
HYMP564S64(L)P6-E3  
HYMP564S64(L)P6-C5  
HYMP564S64(L)P6-C4  
4-4-4  
3-3-3  
5-5-5  
4-4-4  
PC2-3200 (DDR2-400)  
200pin Unbuffered SO-  
DIMM  
67.60 mm x 30,00 mm  
(MO-224)  
Two rank 512MB  
Lead free  
SO-DIMM  
PC2-4300 (DDR2-533)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Aug. 2004  
2
HYMP564S64(L)P6  
PIN DESCRIPTION  
Symbol  
Type Polarity  
Pin Description  
The system clock inputs. All adress an commands lines are sampled on the cross point of the  
rising edge of CK and falling edge of CK. A Delay Locked Loop(DLL) circuit is driven from the  
clock inputs and output timing for read operations is synchronized to the input clock.  
CK[1:0],  
CK[1:0]  
Cross  
Point  
Input  
Input  
Input  
Active  
High  
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low. By  
deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.  
CKE[1:0]  
Enables the associated DDR2 SDRAM command decoder when low and disables the com-  
mand decoder when high. When the command decoder is disabled, new commands are  
ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1  
Active  
Low  
/S[1:0]  
Active  
Low  
When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS  
and WE define the operation to be excecuted by the SDRAM.  
/RAS, /CAS, /WE Input  
BA[1:0]  
Input  
Input  
Selects which DDR2 SDRAM internal bank of four or eight is activated.  
Active  
High  
Asserts on-die termination for DQ, DM, DQS and DQS signals if enabled via the DDR2 SDRAM  
mode register.  
ODT{1:0]  
During a Bank Activate command cycle, difines the row address when sampled at the cross  
point of the rising edge of CK and falling edge of CK. During a Read or Write command cycle,  
defines the column address when sampled at the cross point of the rising edge of CK and fall-  
ing edge of CK. In addition to the column address, AP is used to invoke autoprecharge oper-  
ation at the end of the burst read or write cycle. If AP is high., autoprecharge is selected and  
BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a  
Precharge command cycle., AP is used in conjunction with BA0-BAn to control which bank(s)  
to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn  
inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.  
A[9:0], A10/AP,  
A[15:11]  
Input  
DQ[63:0]  
DM[7:0]  
In/Out  
Input  
Data Input/Output pins.  
The data write masks, associated with one data byte. In Write mode, DM operates as a byte  
mask by allowing input data to be written if it is low but blocks the write operation if it is  
high. In Read mode, DM lines have no effect.  
Active  
High  
The data strobe, associated with one data byte, sourced whit data transfers. In Write mode,  
the data strobe is sourced by the controller and is centered in the data window. In Read  
mode, the data strobe is sourced by the DDR2 SDRAMs and is sent at leading edge of the  
data window. DQS signals are complements, and timing is relative to the crosspoint of  
respective DQS and DQS. If the module is to be operated in single ended strobe mode, all  
DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers pro-  
grammed approriately.  
DQS[7:0],  
DQS[7:0]  
Cross  
point  
In/Out  
VDD  
VDDSPD,VSS  
,
Supply  
In/Out  
Power supplies for core, I/O, Serial Presense Detect, and ground for the module.  
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister  
must be connected to VDD to act as a pull up.  
SDA  
This signals is used to clock data into and out of the SPD EEPROM. A resistor may be con-  
nected from SCL to VDD to act as a pull up.  
SCL  
Input  
Input  
In/Out  
SA[1:0]  
TEST  
NC  
Address pins used to select the Serial Presence Detect base address.  
The TEST pin is reserved for bus analysis tools and is not connected on normal memory mod-  
ules(SODIMMs).  
Spare Pins, No Connet  
Rev. 0.1 / Aug. 2004  
3
HYMP564S64(L)P6  
PIN ASSIGNMENT  
Back  
Side  
Front  
Side  
Pin  
Front  
Side  
Back  
Side  
Pin  
NO.  
Front  
Side  
Pin  
NO.  
Back  
Side  
Pin  
NO.  
Front  
Side  
Pin  
NO.  
Pin  
NO.  
Pin  
NO.  
Back  
Side  
Pin  
NO.  
NO.  
1
VREF  
VSS  
2
VSS  
DQ4  
DQ5  
VSS  
DM0  
VSS  
DQ6  
DQ7  
VSS  
DQ12  
DQ13  
VSS  
DM1  
VSS  
CK0  
51  
53  
55  
57  
59  
61  
63  
65  
67  
69  
71  
73  
75  
77  
79  
81  
83  
85  
87  
89  
91  
93  
95  
97  
99  
DQS2  
VSS  
DQ18  
DQ19  
VSS  
DQ24  
DQ25  
VSS  
DM3  
NC  
52  
54  
56  
58  
60  
62  
64  
66  
68  
70  
72  
74  
76  
78  
80  
82  
84  
86  
88  
90  
92  
94  
96  
98  
100  
DM2  
VSS  
101  
103  
105  
107  
109  
111  
113  
115  
117  
A1  
VDD  
A10/AP  
BA0  
102  
104  
106  
108  
110  
112  
114  
116  
118  
120  
122  
124  
126  
128  
130  
132  
134  
136  
138  
140  
142  
144  
146  
148  
150  
A0  
151  
153  
155  
157  
159  
161  
163  
165  
167  
169  
171  
173  
175  
177  
179  
181  
183  
185  
187  
189  
191  
193  
195  
197  
199  
DQ42  
DQ43  
VSS  
152  
154  
156  
158  
160  
162  
DQ46  
DQ47  
VSS  
3
4
VDD  
BA1  
5
DQ0  
6
DQ22  
DQ23  
VSS  
7
DQ1  
8
RAS  
S0  
DQ48  
DQ49  
VSS  
DQ52  
DQ53  
VSS  
9
VSS  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
42  
44  
46  
48  
50  
WE  
11  
13  
15  
17  
19  
21  
23  
25  
27  
29  
31  
33  
35  
37  
39  
41  
43  
45  
47  
49  
DQS0  
DQS0  
VSS  
DQ28  
DQ29  
VSS  
VDD  
CAS  
VDD  
ODT0  
A13  
NC,TEST 164  
CK1  
NC/S1  
VDD  
VSS  
DQS6  
DQS6  
VSS  
166  
168  
170  
172  
174  
176  
178  
180  
182  
184  
186  
188  
190  
192  
194  
196  
198  
CK1  
DQ2  
DQS3  
DQS3  
VSS  
VDD  
NC  
VSS  
DQ3  
119 NC/ODT1  
DM6  
VSS  
VSS  
VSS  
DQ26  
DQ27  
VSS  
CKE0  
VDD  
NC  
121  
123  
125  
127  
VSS  
DQ32  
DQ33  
VSS  
VSS  
DQ36  
DQ37  
VSS  
DM4  
VSS  
DQ38  
DQ39  
VSS  
DQ44  
DQ45  
VSS  
DQS5  
DQS5  
VSS  
DQ8  
DQ30  
DQ31  
VSS  
DQ50  
DQ51  
VSS  
DQ54  
DQ55  
VSS  
DQ9  
VSS  
DQS1  
DQS1  
VSS  
NC/CKE1 129  
DQS4  
DQS4  
VSS  
DQ56  
DQ57  
VSS  
DQ60  
DQ61  
VSS  
CK0  
VDD  
NC/A15  
NC/A14  
VDD  
A11  
131  
133  
135  
137  
139  
141  
143  
145  
147  
149  
VSS  
DQ14  
DQ15  
VSS  
VSS  
DQ20  
DQ21  
VSS  
NC  
DQ10  
DQ11  
VSS  
BA2  
VDD  
A12  
DQ34  
DQ35  
VSS  
DM7  
DQS7  
DQS7  
VSS  
VSS  
DQ58  
DQ59  
VSS  
VSS  
A9  
A7  
DQ40  
DQ41  
VSS  
DQ62  
DQ63  
VSS  
DQ16  
DQ17  
VSS  
A8  
A6  
VDD  
A5  
VDD  
A4  
SDA  
DM5  
SCL  
SA0  
DQS2  
A3  
A2  
VSS  
VDDSPD 200  
SA1  
Pin Location  
200  
42  
2
40  
Back  
Front  
1
199  
39  
41  
Rev. 0.1 / Aug. 2004  
4
HYMP564S64(L)P6  
FUNCTIONAL BLOCK DIAGRAM  
3+/− 5%  
ODT1  
ODT0  
CKE1  
CKE0  
/S1  
/S0  
DQS0  
/DQS0  
DM0  
LDQS  
/UDQS  
LDM  
DQS4  
/DQS4  
DM4  
LDQS  
/UDQS  
LDM  
LDQS  
/UDQS  
LDM  
LDQS  
/UDQS  
LDM  
/CS  
/CS  
/CS  
/CS  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
DQ0  
DQ1  
DQ2  
DQ3  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ4  
DQ5  
DQ6  
DQ7  
DQ37  
DQ38  
DQ39  
I/O  
I/O  
6
7
I/O  
I/O  
6
7
I/O  
I/O  
6
7
I/O  
I/O  
6
7
D4  
D6  
D0  
D2  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
DQS1  
/DQS1  
DM1  
DQS5  
/DQS5  
DM5  
DQ8  
DQ8  
I/O  
I/O  
8
9
DQ40  
DQ41  
DQ42  
DQ43  
I/O  
I/O  
8
9
I/O  
I/O  
8
9
I/O  
I/O  
8
9
DQ10  
DQ11  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
DQ12  
DQ13  
DQ14  
DQ15  
DQ44  
DQ45  
DQ46  
DQ47  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
DQS2  
/DQS2  
DM2  
LDQS  
/LDQS  
LDM  
DQS6  
/DQS6  
DM6  
LDQS  
/LDQS  
LDM  
/CS  
/CS  
LDQS  
/UDQS  
LDM  
LDQS  
/UDQS  
LDM  
/CS  
/CS  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
DQ16  
DQ17  
DQ18  
DQ19  
DQ48  
DQ49  
DQ50  
DQ51  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
DQ20  
DQ21  
DQ22  
DQ23  
DQ52  
DQ53  
DQ54  
DQ55  
I/O  
I/O  
6
7
I/O  
I/O  
6
7
I/O  
I/O  
6
7
I/O  
I/O  
6
7
D1  
D3  
D5  
D7  
DQS3  
/DQS3  
DM3  
DQS7  
/DQS7  
DM7  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
UDQS  
/UDQS  
UDM  
I/O  
I/O  
8
9
I/O  
I/O  
8
9
DQ24  
DQ25  
DQ26  
DQ27  
DQ56  
DQ57  
DQ58  
DQ59  
I/O  
I/O  
8
9
I/O  
I/O  
8
9
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
DQ28  
DQ29  
DQ30  
DQ31  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
I/O 14  
I/O 15  
3+/- 5%  
SCL  
SCL  
Notes :  
SDA  
BA0-BA2  
A0-AN  
/RAS  
/CAS  
/W E  
SDRAMS D0-7  
SDRAMS D0-7  
SDRAMS D0-7  
SDRAMS D0-7  
SDRAMS D0-7  
SDA  
SA0  
SA1  
A0  
A1  
A2  
1. Unless otherwise noted, resistor values are  
22 ± 5%  
2. DQ wring may differ form that described in  
this drawing; however ,DQ,DM,DQS,/DQS  
relationships are maintained as shown.  
Serial PD  
WP  
CK0  
VDD SPD  
VREF  
Serial PD  
SDRAM S DO-D3  
4
4
loads  
loads  
/CK0  
CK1  
VDD  
SDRAMS DO-D3, VDD and VDD  
SDRAM S DO-D3, SPD  
Q
/CK1  
VSS  
Rev. 0.1 / Aug. 2004  
5
HYMP564S64(L)P6  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
TOPR  
Value  
0 ~ +55  
Unit  
Note  
oC  
Operating temperature(ambient)  
DRAM Component Case Temperature Range  
Operating Humidity(relative)  
1
oC  
%
2
1
1
TCASE  
HOPR  
0 ~+95  
10 to 90  
-50 ~ +100  
5 to 95  
oC  
oC  
Storage Temperature  
TSTG  
HSTG  
Storage Humidity(without condensation)  
Barometric Pressure(operating & storage)  
1
PBAR  
105 to 69  
K Pascal  
1,3  
Note :  
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device  
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con  
ditions for extended periods may affect reliablility.  
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to  
tREFI=3.9ß¡. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.  
3. Up to 9850 ft.  
Operating Condtions(AC&DC)  
DC OPERATING CONDITIONS (SSTL_1.8)  
Parameter  
Symbol  
VDD  
Min  
Max  
Unit  
Note  
1.7  
1.7  
1.9  
1.9  
V
V
V
V
V
Power Supply Voltage  
VDDQ  
VREF  
1
2
Input Reference Voltage  
EEPROM Supply Voltage  
0.49 x VDDQ  
1.7  
0.51 x VDDQ  
3.6  
VDDSPD  
VTT  
VREF-0.04  
VREF+0.04  
3
Termination Voltage  
Note :  
1. VDDQ must be less than or equal to VDD  
.
2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)  
3. VTT of transmitting device must track VREF of receiving device.  
Input DC Logic Level  
Parameter  
Input High Voltage  
Symbol  
Min  
Max  
Unit  
Note  
VIH(DC)  
VIL(DC)  
VREF + 0.125  
-0.30  
VDDQ + 0.3  
VREF - 0.125  
V
V
Input Low Voltage  
Rev. 0.1 / Aug. 2004  
6
HYMP564S64(L)P6  
Input AC Logic Level  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
AC Input logic High  
AC Input logic Low  
VIH(AC)  
VIL(AC)  
VREF + 0.250  
-
-
V
V
VREF - 0.250  
AC Input Test Conditions  
Symbol  
VREF  
VSWING(MAX)  
SLEW  
Note:  
Condition  
Input reference voltage  
Value  
Units  
V
Notes  
0.5 * VDDQ  
1
1
Input signal maximum peak to peak swing  
Input signal minimum slew rate  
1.0  
1.0  
V
V/ns  
2, 3  
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.  
2. The input signal minimum slew rate is to be maintained over the range from VIL(dc) max to VIH(ac) min for rising edges and the  
range from VIH(dc) min to VIL(ac) max for falling edges as shown in the below figure.  
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to  
VIL(ac) on the negative transitions.  
Start of Rising Edge Input Timing  
Start of Falling Edge Input Timing  
V
V
V
V
V
V
V
DDQ  
IH(ac)  
IH(dc)  
REF  
min  
min  
V
SWING(MAX)  
max  
max  
IL(dc)  
IL(ac)  
SS  
delta TF  
V
delta TR  
Rising Slew =  
V
min - V  
max  
min -  
V
max  
IL(ac)  
IH(ac)  
IL(dc)  
IH(dc)  
Falling Slew =  
delta TR  
delta TF  
< Figure : AC Input Test Signal Waveform >  
Rev. 0.1 / Aug. 2004  
7
HYMP564S64(L)P6  
Differential Input AC logic Level  
Symbol  
Parameter  
ac differential input voltage  
ac differential cross point voltage  
Min.  
Max.  
Units  
Note  
VID (ac)  
0.5  
VDDQ + 0.6  
V
1
VIX (ac)  
0.5 * VDDQ - 0.175  
0.5 * VDDQ + 0.175  
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,  
LDQS, UDQS and UDQS.  
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as  
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The  
minimum value is equal to VIH(DC) - V IL(DC).  
V
DDQ  
V
TR  
Crossing point  
V
ID  
V
V
IX or OX  
V
CP  
V
SSQ  
< Differential signal levels >  
Note:  
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal  
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).  
The minimum value is equal to V IH(AC) - V IL(AC).  
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to  
track variations in VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.  
Differential AC output parameters  
Symbol  
Parameter  
Min.  
Max.  
Units  
Note  
VOX (ac)  
0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125  
V
1
ac differential cross point voltage  
Note:  
1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected to track  
variations in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.  
Rev. 0.1 / Aug. 2004  
8
HYMP564S64(L)P6  
Output Buffer Levels  
Output AC Test Conditions  
Symbol  
VOH  
Parameter  
SSTL_18 Class II  
VTT + 0.603  
Units  
Notes  
Minimum Required Output Pull-up under AC Test Load  
Maximum Required Output Pull-down under AC Test Load  
Output Timing Measurement Reference Level  
V
V
V
VOL  
VTT - 0.603  
VOTR  
0.5 * VDDQ  
1
1. The VDDQ of the device under test is referenced.  
Output DC Current Drive  
Symbol  
IOH(dc)  
IOL(dc)  
Parameter  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
SSTl_18 Class II  
Units  
mA  
Notes  
- 13.4  
13.4  
1, 3, 4  
2, 3, 4  
mA  
1.  
VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280  
mV.  
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.  
3. The dc value of VREF applied to the receiving device is set to VTT  
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current  
capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The  
actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to  
define a convenient driver current for measurement.  
OCD defalut characteristics  
Description  
Parameter  
Min  
12.6  
Nom  
Max  
23.4  
4
Unit  
ohms  
ohms  
V/ns  
Notes  
1,2  
Output impedance  
18  
Pull-up and pull-down mismatch  
Output slew rate  
0
1,2,3  
Sout  
1.5  
-
5
1,4,5,6  
Note:  
1. Absolute Specifications (0°C TCASE +tbd°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)  
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh  
must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condi-  
tion for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of  
VOUT between 0V and 280mV.  
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.  
4. Slew rate measured from vil(ac) to vih(ac).  
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured  
from AC to AC.  
6. DRAM output slew rate specification applies to 400MT/s & 533MT/s speed bins.  
Rev. 0.1 / Aug. 2004  
9
HYMP564S64(L)P6  
PIN CAPACITANCE (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )  
Parameter  
Pin  
Symbol  
Min  
Max  
Unit  
Input Capacitance  
Input Capacitance  
Input Capacitance  
Input Capacitance  
CK, /CK  
CCK  
CI1  
CI2  
CIO  
17.0  
22.0  
28.5  
10.0  
20.0  
25.0  
37.0  
12.0  
pF  
pF  
pF  
pF  
CKE0, /CS  
Address, /RAS, /CAS, /WE  
DQ,DM,DQS, /DQS  
Note :  
1. Pins not under test are tied to GND.  
2. These value are guaranteed by design and tested on a sample basis only.  
IDD Specifications(max.)  
Parameter  
Symbol  
PC2 3200  
PC2 4300  
PC2 5300  
Unit  
Operating one bank  
active-precharge current  
IDD0  
760  
820  
880  
mA  
mA  
Operating one bank active-read-  
precharge current  
IDD1  
780  
840  
900  
Precharge power-down current  
Precharge quiet standby current  
Precharge standby current  
IDD2P  
IDD2Q  
IDD2N  
IDD3P(F)  
IDD3P(S)  
IDD3N  
IDD4R  
IDD4W  
IDD5B  
IDD6  
24  
240  
280  
120  
24  
32  
280  
320  
160  
32  
40  
360  
400  
200  
40  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Active power-down current  
Active Standby Current  
Operating burst read current  
Operating Current  
480  
800  
800  
900  
40  
560  
980  
980  
980  
40  
640  
1080  
1080  
1080  
40  
Burst auto refresh current  
Self Refresh Current  
IDD6(L)  
IDD7  
24  
24  
24  
Operating bank interleave read current  
1560  
1620  
1680  
Rev. 0.1 / Aug. 2004  
10  
HYMP564S64(L)P6  
IDD Meauarement Conditions  
Symbol  
Conditions  
Units  
t
t
t
t
t
t
Operating one bank active-precharge current; CK = CK(IDD), RC = RC(IDD), RAS = RAS-  
min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus  
inputs are SWITCHING  
IDD0  
IDD1  
mA  
t
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; CK =  
t
t
t
t
t
t
t
CK(IDD), RC = RC (IDD), RAS = RASmin(IDD), RCD = RCD(IDD) ; CKE is HIGH, CS is HIGH between  
valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W  
mA  
t
t
Precharge power-down current ; All banks idle ; CK = CK(IDD) ; CKE is LOW ; Other control and address  
IDD2P  
IDD2Q  
IDD2N  
mA  
mA  
mA  
bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge quiet standby current;All banks idle; CK = CK(IDD);CKE is HIGH, CS is HIGH; Other control  
and address bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge standby current; All banks idle; CK = CK(IDD); CKE is HIGH, CS is HIGH; Other control and  
address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
t
t
mA  
mA  
Active power-down current; All banks open; CK = CK(IDD); CKE is  
LOW; Other control and address bus inputs are STABLE; Data bus inputs  
are FLOATING  
Fast PDN Exit MRS(12) = 0  
Slow PDN Exit MRS(12) = 1  
IDD3P  
IDD3N  
IDD4W  
IDD4R  
t
t
t
t
t
t
Active standby current; All banks open; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is  
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus  
inputs are SWITCHING  
mA  
mA  
mA  
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0;  
t
t
t
t
t
t
CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL =  
t
t
t
t
t
t
CL(IDD), AL = 0; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between  
valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W  
t
t
t
Burst refresh current; CK = CK(IDD); Refresh command at every RFC(IDD) interval; CKE is HIGH, CS is  
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
IDD5B  
IDD6  
mA  
mA  
Self refresh current; CK and CK at 0V; CKE £ 0.2V; Other control and address bus inputs are FLOATING;  
Data bus inputs are FLOATING  
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),  
t
t
t
t
t
t
t
t
t
t
AL = RCD(IDD)-1* CK(IDD); CK = CK(IDD), RC = RC(IDD), RRD = RRD(IDD), RCD = 1* CK(IDD); CKE  
is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat-  
tern is same as IDD4R; - Refer to the following page for detailed timing conditions  
IDD7  
mA  
Note:  
1. IDD specifications are tested after the device is properly initialized  
2. Input slew rate is specified by AC Parametric Test Condition  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations  
of EMRS bits 10 and 11.  
5. Definitions for IDD  
LOW is defined as Vin £ VILAC(max)  
HIGH is defined as Vin Š VIHAC(min)  
STABLE is defined as inputs stable at a HIGH or LOW level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals,  
and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or  
strobes.  
Rev. 0.1 / Aug. 2004  
11  
HYMP564S64(L)P6  
Electrical Characteristics & AC Timings  
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin  
Speed  
Bin(CL-tRCD-tRP)  
Parameter  
CAS Latency  
tRCD  
DDR2-533(C4)  
DDR2-533(C5)  
DDR2-400(E3)  
DDR2-400(E4)  
Unit  
4-4-4  
min  
4
5-5-5  
min  
3-3-3  
min  
3
4-4-4  
min  
4
5
ns  
ns  
ns  
ns  
ns  
15  
18.75  
18.75  
63.75  
45  
15  
20  
tRP  
15  
15  
20  
tRC  
60  
55  
65  
tRAS  
45  
40  
45  
AC Timing Parameters by Speed Grade  
DDR2-400  
DDR2-533  
Parameter  
Symbol  
Unit Note  
Min  
-600  
-500  
0.45  
0.45  
Max  
600  
Min  
-500  
-500  
0.45  
0.45  
Max  
500  
Data-Out edge to Clock edge Skew  
DQS-Out edge to Clock edge Skew  
Clock High Level Width  
tAC  
tDQSCK  
tCH  
ps  
ns  
500  
450  
0.55  
0.55  
0.55  
0.55  
CK  
CK  
Clock Low Level Width  
tCL  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
Clock Half Period  
tHP  
-
-
ns  
ps  
System Clock Cycle Time  
DQ and DM input hold time  
DQ and DM input setup time  
tCK  
tDH  
tDS  
5000  
400  
8000  
3750  
350  
8000  
-
-
-
-
ps  
ps  
1
1
400  
350  
Control & Address input Pulse Width for each  
input  
tIPW  
0.6  
-
0.6  
-
tCK  
DQ and DM input pulse witdth for each input  
pulse width for each input  
tDIPW  
tHZ  
0.35  
-
-
0.35  
-
-
tCK  
ps  
Data-out high-impedance window from CK, /CK  
tAC max  
tAC max  
DQS low-impedance time from CK/CK  
DQ low-impedance time from CK/CK  
tLZ(DQS)  
tLZ(DQ)  
tDQSQ  
tAC min  
2*tAC min  
-
tAC max  
tAC max  
350  
tAC min  
2*tAC min  
-
tAC max  
tAC max  
300  
ps  
ps  
ps  
DQS-DQ skew for DQS and associated DQ  
signals  
DQ hold skew factor  
tQHS  
tQH  
-
tHP - tQHS  
WL - 0.25  
0.35  
450  
-
tHP - tQHS  
WL - 0.25  
0.35  
400  
-
ps  
ps  
DQ/DQS output hold time from DQS  
Write command to first DQS latching transition  
DQS input high pulse width  
DQS input low pulse width  
-
tDQSS  
tDQSH  
tDQSL  
tDSS  
WL + 0.25  
WL + 0.25 tCK  
-
-
-
-
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
0.35  
0.35  
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
0.2  
-
0.2  
-
tDSH  
0.2  
-
0.2  
-
tMRD  
tWPST  
tWPRE  
2
-
2
-
0.4  
0.6  
-
0.4  
0.6  
-
Write preamble  
0.25  
0.25  
Rev. 0.1 / Aug. 2004  
12  
HYMP564S64(L)P6  
- continued -  
DDR2 400  
DDR2 533  
Unit Note  
Parameter  
Symbol  
Min  
Max  
Min  
Max  
Address and control input hold time  
Address and control input setup time  
Read preamble  
tIH  
tIS  
600  
600  
0.9  
0.4  
-
500  
500  
0.9  
0.4  
-
ps  
ps  
-
-
tRPRE  
tRPST  
1.1  
0.6  
1.1  
0.6  
tCK  
tCK  
Read postamble  
Auto-Refresh to Active/Auto-Refresh command  
period  
tRFC  
tRRD  
105  
7.5  
-
-
105  
7.5  
-
-
ns  
ns  
Active to active command period for 1KB page  
size(x4,x8)  
Active to active command period for 2KB page  
size(x16)  
tRRD  
10  
-
10  
-
ns  
CAS to CAS command delay  
Write recovery time  
tCCD  
tWR  
2
2
tCK  
ns  
15  
-
-
15  
-
-
(tWR/tCK)  
+
(tRP/tCK)  
(tWR/tCK)  
+
(tRP/tCK)  
Auto Precharge Write Recovery + Precharge  
Time  
tDAL  
tCK  
Write to Read Command Delay  
tWTR  
10  
-
ns  
7.5  
-
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tRTP  
tXSNR  
tXSRD  
7.5  
tRFC + 10  
200  
7.5  
tRFC + 10  
200  
ns  
ns  
-
-
-
-
tCK  
Exit precharge power down to any non-read  
command  
tXP  
2
2
2
2
tCK  
tCK  
tCK  
Exit active power down to read command  
Exit active power down to read command  
tXARD  
tXARDS  
6 - AL  
6 - AL  
(Slow exit, Lower power)  
CKE minimum pulse width  
(high and low pulse width)  
tCKE  
3
3
tCK  
tCK  
tAOND  
tAON  
ODT turn-on delay  
ODT turn-on  
2
2
2
2
tAC(min)  
tAC(max)+1  
tAC(min)  
tAC(max)+1 ns  
2tCK+  
tAC(max)+1  
2tCK+  
ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on(Power-Down mode)  
ODT turn-off delay  
tAC(min)+2  
2.5  
tAC(min)+2  
2.5  
tAC(max)+1  
2.5  
2.5  
tCK  
ns  
tAC(max)+  
0.6  
tAC(max)+  
0.6  
ODT turn-off  
tAC(min)  
tAC(min)  
2.5tCK+  
tAC(max)+1  
2.5tCK+  
tAC(max)+1  
tAOFPD  
ODT turn-off (Power-Down mode)  
tAC(min)+2  
tAC(min)+2  
ns  
ODT to power down entry latency  
ODT power down exit latency  
OCD drive mode output delay  
tANPD  
tAXPD  
tOIT  
3
8
0
3
8
0
tCK  
tCK  
ns  
12  
12  
Minimum time clocks remains ON after CKE  
asynchronously drops LOW  
tDelay  
tIS+tCK+tIH  
tIS+tCK+tIH  
ns  
tREFI  
tREFI  
-
-
7.8  
3.9  
-
-
7.8  
3.9  
us  
us  
2
3
Average periodic Refresh Interval  
Note :  
1. For details and notes, please refer to the relevant HYNIX component datasheet(HY5PS121621(L)F).  
2. C TCASE ≤ 85°C  
3. 85°C TCASE ≤ 95°C  
Rev. 0.1 / Aug. 2004  
13  
HYMP564S64(L)P6  
PACKAGE OUTLINE  
Front  
67.60  
20.00 Min  
Side  
3.80 max  
4.00 +/-0.10  
(Front)  
30.00  
20.00  
PIN  
1
PIN  
41  
PIN  
39  
PIN  
199  
1.00 ± 0.10  
11.40  
2.70  
4.20  
47.40  
47.40  
Back  
2.45  
11.40  
2.40  
4.20  
PIN  
40  
PIN  
42  
PIN  
200  
PIN  
2
note:  
1. all dimension units are millimeters.  
2. all outline dimensions and tolerances match up to the JEDEC standard.  
Rev. 0.1 / Aug. 2004  
14  
SERIAL PRESENCE DETECT  
SPD SPECIFICATION  
(64Mx64 Unbuffered DDR2 Lead free SO-DIMM)  
Rev. 0.1/ Aug. 2004  
15  
HYMP564S64(L)P6  
SERIAL PRESENCE DETECT  
Bin Sort : E3(DDR2 400 3-3-3), E4(DDR2 400 4-4-4),  
C4(DDR2 533 4-4-4), C5(DDR2 533 5-5-5)  
Speed  
Grade  
Hexa  
Value  
Byte#  
Function Description  
Function Supported  
Note  
0
1
2
3
4
5
6
7
8
Number of bytes utilized by module manufacturer  
Total number of Bytes in SPD device  
Fundamental memory type  
Number of row address on this assembly  
Number of column address on this assembly  
Number of DIMM ranks  
Module data width  
Module data width (continued)  
Voltage Interface level of this assembly  
all  
all  
all  
all  
all  
all  
all  
all  
all  
E3,E4  
C4,C5  
E3,E4  
C4,C5  
all  
all  
all  
128 Bytes  
256 Bytes  
DDR2 SDRAM  
13  
10  
2 rank  
64 Bits  
-
SSTL 1.8V  
5.0 ns  
80  
08  
08  
0D  
0A  
61  
40  
00  
05  
50  
3D  
60  
50  
00  
82  
10  
00  
00  
0C  
04  
38  
00  
04  
00  
01  
50  
3D  
60  
50  
50  
00  
60  
00  
3C  
50  
4B  
28  
3C  
50  
4B  
28  
2D  
40  
60  
50  
60  
50  
40  
35  
40  
35  
3C  
28  
1E  
1E  
00  
00  
50  
37  
3C  
41  
3F  
1
1
2
2
9
DDR SDRAM cycle time at CL=5  
3.75 ns  
+/-0.6ns  
+/-0.5ns  
non-ECC  
7.8us & Self refresh  
x16  
10  
DDR SDRAM access time from clock (tAC)  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DIMM Configuration type  
Refresh Rate and Type  
Primary DDR SDRAM width  
Error Checking DDR SDRAM data width  
Reserved  
Burst Lengths Supported  
Number of banks on each SDRAM Device  
CAS latency supported  
Reserved  
DIMM Type  
DDR SDRAM module attributes  
DDR SDRAM device attributes : General  
all  
None  
-
4,8  
4
all  
all  
all  
3, 4, 5  
-
SO-DIMM  
Normal  
Supports weak driver  
5.0ns  
all  
all  
all  
E3,E4,C5  
C4  
E3,E4,C5  
C4  
E3,C4  
E4,C5  
E3,C4  
E4,C5  
E3, C4  
E4  
C5  
all  
E3, C4  
E4  
C5  
23  
24  
25  
26  
DDR SDRAM cycle time at CL=4(tCK)  
2
2
2
2
3.75ns  
+/-0.6ns  
+/-0.5ns  
5.0ns  
Undefined  
+/-0.6ns  
Undefined  
15ns  
20ns  
18.75ns  
10ns  
15ns  
20ns  
18.75ns  
40ns  
45ns  
256MB  
0.6ns  
0.5ns  
0.6ns  
0.5ns  
0.40ns  
0.35ns  
0.40ns  
0.35ns  
15ns  
DDR SDRAM access time from clock at CL=4(tAC)  
DDR SDRAM cycle time at CL=3(tCK)  
DDR SDRAM access time from clock at CL=3(tAC)  
27  
28  
29  
Minimum Row Precharge Time(tRP)  
Minimum Row Activate to Row Active delay(tRRD)  
Minimum RAS to CAS delay(tRCD)  
E3  
E4,C4,C5  
all  
30  
31  
32  
Minimum active to precharge time(tRAS)  
Module rank density  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
all  
Address and command input setup time before clock (tIS)  
33  
34  
Address and command input hold time after clock (tIH)  
Data input setup time before clock (tDS)  
35  
36  
37  
Data input hold time after clock (tDH)  
Write recovery time(tWR)  
E3, E4  
C4, C5  
all  
10ns  
7.5ns  
7.5ns  
Internal write to read command delay(tWTR)  
38  
39  
Internal read to precharge command delay(tRTP)  
Memory analysis probe characteristics  
Undefined  
Undefined  
tRC extended  
55ns  
60ns  
65ns  
63.75ns  
E3,E4,C4  
40  
Extension of byte 41 tRC and byte 42 tRFC  
C5  
E3  
C4  
E4  
C5  
41  
Minimum active / auto-refresh time ( tRC)  
Rev. 0.1 / Aug. 2004  
16  
HYMP564S64(L)P6  
- continued -  
Speed  
Grade  
Hexa  
Value  
Byte#  
Function Description  
Function Supported  
Note  
Minimum auto-refresh to active/auto-refresh  
command period(tRFC)  
Maximum cycle time (tCK max)  
42  
43  
44  
all  
105ns  
69  
all  
8.0ns  
0.35ns  
0.30ns  
0.45ns  
0.40ns  
No PLL  
Undefined  
80  
23  
1E  
2D  
28  
00  
00  
10  
86  
0D  
00  
E4  
AD  
00  
0*  
1*  
2*  
3*  
4*  
5*  
48  
59  
4D  
50  
35  
36  
34  
53  
36  
34  
50  
36  
2D  
45  
43  
33  
34  
35  
20  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
Maximim DQS-DQ skew time(tDQSQ)  
45  
46  
Maximum read data hold skew factor(tQHS)  
PLL Relock time  
47~61 Superset information(may be used in future)  
62  
63  
64  
SPD Revision code  
1.0  
-
-
-
E3  
E4  
C4  
C5  
Checksum for Bytes 0~62  
-
Manufacturer JEDEC ID Code  
65~71 --------- Manufacturer JEDEC ID Code  
Hynix JEDEC ID  
-
Hynix(Korea Area)  
HSA(United States Area)  
HSE(Europe Area)  
HSJ(Japan Area)  
72  
Manufacturing location  
6
Singapore  
Asia Area  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
Manufacture part number (DDR2 SDRAM)  
---------Manufacture part number(Memory density)  
Manufacture part number(Module Depth)  
------- Manufacture part number(Module Depth)  
Manufacture part number(Module type)  
Manufacture part number(Data width)  
-------Manufacture part number(Data width)  
Manufacture part number(Package Material)  
Manufacture part number(Component configuration)  
Manufacture part number(Hyphen)  
H
Y
M
P
5
6
4
S
6
4
P
6
‘-’  
E
C
3
4
5
E3, E4  
C4, C5  
E3  
E4,C4  
C5  
86  
Manufacture part number(Minimum cycle time)  
87  
-------Manufacture part number(Minimum cycle time)  
88~90 Manufacture part number(T.B.D)  
Blank  
91  
92  
93  
94  
Manufacture revision code(for Component)  
Manufacture revision code (for PCB)  
Manufacturing date(Year)  
3
3
4
5
5
Manufacturing date(Week)  
95~98 Module serial number  
99~127 Manufacturer specific data (may be used in future)  
128~255 Open for customer use  
Undefined  
Undefined  
00  
00  
Note :  
1. The bank address is excluded  
2. This value is based on the component specification  
3. These bytes are programmed by code of date week & date year  
4. These bytes apply to Hynix’s own Module Serial Number System  
5. These bytes undefined and coded as ‘00h’  
6. Refer to Hynix Web Site  
Byte 83~84, Low Power Part  
Speed  
Grade  
Hexa  
Value  
Byte #  
Function Description  
Function Supported  
Note  
83  
84  
Manufacture part number(Low power part)  
Manufacture part number(Package Material)  
L
P
4C  
50  
Rev. 0.1 / Aug. 2004  
17  
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