PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
ZTX795A
FEATURES
*
*
*
140 Volt VCEO
Gain of 250 at IC=0.2 Amps
Very low saturation voltage
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-140
-140
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-1
A
Continuous Collector Current
Practical Power Dissipation*
IC
-0.5
1.5
A
Ptotp
Ptot
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-140
-140
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-0.1
-0.1
VCB=-100V
µA
µA
IEBO
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.3
-0.25
V
V
V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.95
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
-0.75
V
IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
300
250
100
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
3-285
