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IXTV102N20T

型号：

IXTV102N20T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

172 K

下载PDF手册
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH102N20T  
IXTQ102N20T  
IXTV102N20T  
VDSS = 200  
ID25 = 102  
RDS(on) ≤ 23 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VGSM  
TJ = 25°C to 175°C  
Transient  
200  
V
V
± 30  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
102  
75  
250  
A
A
A
G
(TAB)  
D
S
IAS  
EAS  
TC = 25°C  
TC = 25°C  
5
1.2  
A
J
TO-3P (IXTQ)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 2.5 Ω  
7
V/ns  
TC = 25°C  
750  
W
G
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
D
S
(TAB)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
PLUS220 (IXTV)  
Md  
Mounting torque (TO-247 & TO-3P)  
Mounting force (PLUS220)  
1.13 / 10 Nm/lb.in.  
FC  
11..65 / 2.5..14.6  
N/lb.  
G
D
S
(TAB)  
Weight  
TO-247  
TO-3P  
PLUS220  
6
5.5  
4
g
g
g
G = Gate  
D = Drain  
TAB = Drain  
S = Source  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 1 mA  
VGS = ± 20 V, VDS = 0 V  
200  
V
V
Features  
z Unclamped Inductive Switching (UIS)  
rated  
2.5  
4.5  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
μA  
μA  
TJ = 150°C  
Advantages  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
18  
23 mΩ  
Easy to mount  
Space savings  
High power density  
z
z
DS99821 (04/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH102N20T IXTQ102N20T IXTV102N20T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
55  
92  
S
Ciss  
Coss  
Crss  
6800  
722  
pF  
pF  
pF  
1
2
3
126  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2.5 Ω (External)  
19  
26  
50  
25  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
114  
34  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
31  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Source-Drain Diode  
20.80 21.46  
15.75 16.26  
Symbol  
Test Conditions  
Characteristic Values  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
102  
330  
1.2  
.780 .800  
.177  
IS  
VGS = 0 V  
A
A
ÆP 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50 A, VGS = 0 V, Note 1  
V
TO-3P (IXTQ) Outline  
IF = 50 A, -di/dt = 100 A/μs  
130  
ns  
VR = 50 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
PLUS220 (IXTV) Outline  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineer-  
ing lots; but also may yet contain some information supplied during a pre-production  
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-  
sions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTH102N20T IXTQ102N20T IXTV102N20T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
V
= 10V  
GS  
V
= 10V  
GS  
220  
200  
180  
160  
140  
120  
100  
80  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
60  
40  
5V  
20  
5V  
0
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 51A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 102A  
D
6V  
I
= 51A  
D
5V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 51A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
V
= 10V  
GS  
T = 175ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
20  
40  
60  
80  
100 120 140 160 180 200  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH102N20T IXTQ102N20T IXTV102N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
160  
T
J
= - 40ºC  
140  
120  
100  
80  
25ºC  
150ºC  
T
J
= 150ºC  
60  
60  
25ºC  
- 40ºC  
40  
40  
20  
20  
0
0
3.4  
0.4  
0
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
0
20  
40  
60  
80  
100 120 140 160 180 200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 100V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
f = 1 MHz  
C
oss  
C
rss  
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH102N20T IXTQ102N20T IXTV102N20T  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
27  
26  
25  
24  
23  
22  
21  
27  
R
V
V
= 2.5  
Ω
G
= 15V  
26  
GS  
DS  
= 100V  
T = 25ºC  
J
R
V
V
= 2.5  
Ω
G
= 15V  
25  
24  
23  
22  
21  
GS  
DS  
= 100V  
I
= 102A  
D
I
= 51A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
34  
26  
25  
24  
23  
22  
21  
20  
19  
26  
75  
70  
65  
60  
55  
50  
45  
40  
35  
t r  
td(on) - - - -  
25  
24  
23  
22  
21  
20  
19  
18  
32  
30  
28  
26  
24  
22  
20  
TJ = 125ºC, V = 15V  
GS  
V
= 100V  
DS  
I
= 51A  
D
I
= 102A, 51A  
D
I
= 102A  
D
t f  
R
td(off)  
- - - -  
= 2.5 , V = 15V  
Ω
G
GS  
V
= 100V  
DS  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
70  
67  
64  
61  
58  
55  
52  
49  
46  
43  
40  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
R
V
td(off) - - - -  
t f  
td(off)  
- - - -  
TJ = 125ºC  
= 2.5  
, VGS = 15V  
Ω
G
T = 125ºC, VGS = 15V  
J
DS = 100V  
V
DS = 100V  
T = 25ºC  
J
I
= 51A, 102A  
D
80  
T = 25ºC  
J
70  
60  
50  
TJ = 125ºC  
40  
50 55 60 65 70 75 80 85 90 95 100 105  
ID - Amperes  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IXYS REF: T_102N20T (7W) 4-13-07-A.xls  
© 2007 IXYS CORPORATION, All rights reserved  
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