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IXTV86N25T

型号：

IXTV86N25T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

172 K

下载PDF手册
Preliminary Technical Information  
IXTH86N25T  
IXTQ86N25T  
IXTV86N25T  
VDSS = 250V  
ID25 = 86A  
RDS(on) ≤ 37mΩ  
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
(TAB  
TJ = 25°C to 150°C  
250  
V
D
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
V
VGSM  
Transient  
± 30  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
86  
75  
190  
A
A
A
IAS  
TC = 25°C  
TC = 25°C  
10  
A
J
G
EAS  
1.5  
D
S
(TAB)  
PD  
TC = 25°C  
540  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220 (IXTV)  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G
D
S
Md  
Mounting torque (TO-247 & TO-3P)  
Mounting force (PLUS220)  
1.13 / 10  
Nm/lb.in.  
N/lb.  
(TAB)  
FC  
11..65 / 2.5..14.6  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
TO-247  
TO-3P  
PLUS220  
6.0  
5.5  
4.0  
g
g
g
Features  
z International standard packages  
z Avalanche rated  
z Low package inductance  
- easy to drive and to protect  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
250  
3
Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
V
V
z
z
5
± 200 nA  
μA  
Applications  
IDSS  
VDS = VDSS  
VGS = 0V  
3
TJ = 125°C  
250 μA  
z DC-DC converters  
z Battery chargers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
37 mΩ  
z Switched-mode and resonant-mode  
power supplies  
z DC choppers  
z AC motor control  
z Uninterruptible power supplies  
© 2007 IXYS CORPORATION, All rights reserved  
DS99784A(10/07)  
IXTH86N25T IXTQ86N25T  
IXTV86N25T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
45  
76  
S
Ciss  
Coss  
Crss  
5330  
515  
92  
pF  
pF  
pF  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
22  
28  
55  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Qg(on)  
Qgs  
105  
32  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
28  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
86  
A
A
V
ÆP 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
172  
1.5  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
trr  
156  
21  
ns  
A
TO-3P (IXTQ) Outline  
IF = 43A, -di/dt = 250A/μs  
VR = 100V, VGS = 0V  
IRM  
QRM  
1.7  
μC  
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5mm or less from the package body.  
PLUS220 (IXTV) Outline  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
IXTH86N25T IXTQ86N25T  
IXTV86N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 43A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3
VGS = 10V  
VGS = 10V  
8V  
7V  
2.6  
2.2  
1.8  
1.4  
1
6V  
I D = 86A  
I D = 43A  
5V  
0.6  
0.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 43A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 125ºC  
External Lead Current Limit  
TJ = 25ºC  
20  
40  
60  
80  
100 120 140 160 180 200  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH86N25T IXTQ86N25T  
IXTV86N25T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
3.8  
4
4.2 4.4 4.6 4.8  
5
5.2 5.4 5.6 5.8  
6
6.2 6.4  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH86N25T IXTQ86N25T  
IXTV86N25T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
34  
30  
26  
22  
18  
14  
10  
35  
30  
25  
20  
15  
10  
RG = 3.3  
Ω
RG = 3.3  
Ω
VGS = 15V  
VGS = 15V  
VDS = 125V  
VDS = 125V  
TJ = 25ºC  
I D = 86A  
I D = 43A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
65  
33  
31  
29  
27  
25  
23  
21  
30  
75  
tf  
td(off) - - - -  
VGS = 15V  
tr  
td(on) - - - -  
RG = 3.3  
,
Ω
28  
26  
24  
22  
20  
18  
16  
70  
65  
60  
55  
50  
45  
40  
55  
45  
35  
25  
15  
5
TJ = 125ºC, VGS = 15V  
VDS = 125V  
VDS = 125V  
I D = 86A  
I D = 43A  
I D = 43A  
I D = 86A  
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
28  
26  
24  
22  
20  
18  
16  
14  
80  
75  
70  
65  
60  
55  
50  
45  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
250  
225  
200  
175  
150  
125  
100  
75  
tf  
td(off) - - - -  
, VGS = 15V  
tf  
td(off) - - - -  
RG = 3.3  
Ω
TJ = 25ºC  
TJ = 125ºC, VGS = 15V  
VDS = 125V  
VDS = 125V  
I D = 43A, 86A  
TJ = 125ºC  
TJ = 25ºC  
TJ = 125ºC  
50  
25  
20  
30  
40  
50  
60  
70  
80  
90  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: T_86N25T(6G) 01-04-07  
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