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IXTU1N80P

型号：

IXTU1N80P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

331 K

下载PDF手册
Preliminary Technical Information  
PolarTM  
Power MOSFET  
IXTU1N80P  
IXTY1N80P  
IXTA1N80P  
IXTP1N80P  
VDSS = 800V  
ID25 = 1A  
RDS(on) 14  
TO-251 (IXTU)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
800  
800  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
1
2
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
1
A
EAS  
75  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
5
V/ns  
W
G
D
D (Tab)  
S
42  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
800  
V
Applications  
2.0  
4.0  
V
DC-DC Converters  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
3
TJ = 125C  
30 A  
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
10  
14  
  
High Voltage Pulse Power  
Applications  
DS100112A(6/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTU1N80P IXTY1N80P  
IXTA1N80P IXTP1N80P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.30  
0.55  
S
Ciss  
Coss  
Crss  
250  
22  
pF  
pF  
pF  
5.3  
Qg(on)  
Qgs  
9.0  
1.4  
5.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
td(on)  
tr  
td(off)  
tf  
20  
18  
58  
42  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 50(External)  
RthJC  
RthCS  
3.0 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
1
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
4
1.3  
V
IF = 1A, -di/dt = 100A/μs, VR = 100V  
700  
ns  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTU1N80P IXTY1N80P  
IXTA1N80P IXTP1N80P  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
GS  
V
= 10V  
8V  
GS  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.8  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
6V  
5V  
I
= 1A  
D
I
= 0.5A  
D
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
o
T = 125 C  
J
o
T = 25 C  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTU1N80P IXTY1N80P  
IXTA1N80P IXTP1N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
o
T
J
= - 40 C  
V
= 10V  
DS  
V
= 10V  
DS  
o
25 C  
o
125 C  
o
T
J
= 125 C  
o
25 C  
- 40oC  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 400V  
DS  
I
I
= 0.5A  
D
G
= 10mA  
o
T = 125 C  
J
o
T = 25 C  
J
58
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
1
2
3
4
6
7
9
10  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1,000  
100  
10  
4
= 1 MHz  
f
C
C
iss  
1
oss  
C
rss  
1
0.1  
0.0001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_1N80P(1A) 6-20-17-B  
IXTU1N80P IXTY1N80P  
IXTA1N80P IXTP1N80P  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
  
4
  
L1  
D1  
D
  
A1  
A2  
L2  
H
H
A1  
L4  
1
3
2
1
2
3
  
L1  
b2  
L
c
b2  
b
L3  
c
  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
  
0  
0
  
5.55MIN  
OPTIONAL  
  
0.34 [8.7]  
  
  
0.66 [16.6]  
A2  
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
  
2.85MIN  
1.25MIN  
  
  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
TO-251 OUTLINE  
© 2017 IXYS CORPORATION, All Rights Reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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