CYT5551D
www.centralsemi.com
SURFACE MOUNT
DUAL, ISOLATED
NPN SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551D type
consists of two (2) isolated NPN silicon transistors
packaged in an epoxy molded SOT-228 surface mount
case. Manufactured by the epitaxial planar process,
this SUPERmini™ device is ideal for high voltage
amplifier applications.
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
180
160
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
6.0
V
Continuous Collector Current
Power Dissipation
I
600
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
nA
μA
nA
V
I
I
I
V
V
V
=120V
CBO
CBO
EBO
CB
CB
BE
=120V, T =100ºC
50
A
=4.0V
50
BV
BV
BV
I =100μA
180
160
6.0
CBO
CEO
C
I =1.0mA
V
C
I =10μA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
V
=5.0V, I =1.0mA
80
80
CE
CE
CE
CE
CB
EB
CE
CE
C
V
V
V
V
V
V
V
=5.0V, I =10mA
250
FE
C
=5.0V, I =50mA
30
FE
C
f
=10V, I =10mA, f=100MHz
100
300
6.0
20
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
pF
C
h
=10V, I =1.0mA, f=1.0kHz
50
200
fe
C
NF
=5.0V, I =200μA, R =10Ω,
C S
f=10Hz to 15.7kHz
8.0
dB
R2 (23-February 2010)
