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RYB002N05T2L

型号：

RYB002N05T2L

品牌：

ROHM[ ROHM ]

页数：

6 页

PDF大小：

344 K

下载PDF手册
0.9V Drive Nch MOSFET  
RYB002N05  
Structure  
Dimensions (Unit : mm)  
VMN3  
Silicon N-channel MOSFET  
0.22  
0.16  
(3)  
Features  
1) High speed switing.  
2) Small package(VMN3).  
3)Ultra low voltage drive(0.9V drive).  
(1)  
(2)  
0.37  
0.17  
0.35  
0.6  
Abbreviated symbol : QJ  
Application  
Switching  
Packaging specifications  
Inner circuit  
(3)  
Package  
Taping  
T2L  
Type  
Code  
Basic ordering unit (pieces)  
8000  
∗1  
RYB002N05  
∗2  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(1) GATE  
(2) SOURCE  
(3) DRAIN  
Symbol  
VDSS  
VGSS  
ID  
Limits  
50  
Unit  
V
∗1 BODY DIODE  
∗2 ESD PROTECTION DIODE  
Drain-source voltage  
Gate-source voltage  
8  
V
Continuous  
200  
800  
125  
mA  
mA  
mA  
mA  
mW  
C  
Drain current  
Pulsed  
*1  
IDP  
Continuous  
Pulsed  
IS  
Source current  
(Body Diode)  
*1  
*2  
ISP  
800  
Power dissipation  
PD  
150  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to +150  
C  
*2 Each terminal mounted on a recommended land.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
833  
Unit  
Channel to Ambient  
C / W  
* Each terminal mounted on a recommended land.  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.08 - Rev.A  
1/5  
Data Sheet  
RYB002N05  
ꢀ
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=8V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=50V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V (BR)DSS  
50  
-
-
1
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
0.3  
-
0.8  
2.2  
2.4  
2.8  
3.3  
9.0  
-
V
S
VDS=10V, ID=1mA  
-
1.6  
1.7  
2.0  
2.2  
3.0  
-
ID=200mA, VGS=4.5V  
ID=200mA, VGS=2.5V  
ID=200mA, VGS=1.5V  
ID=100mA, VGS=1.2V  
ID=10mA, VGS=0.9V  
ID=200mA, VDS=10V  
-
Static drain-source on-state  
resistance  
*
RDS (on)  
-
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
0.2  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
26  
6
-
pF VDS=10V  
-
pF VGS=0V  
3
-
pF f=1MHz  
5
-
ns ID=100mA, VDD 25V  
ns VGS=4.5V  
ns RL=250  
ns RG=10  
*
*
*
*
8
-
Turn-off delay time  
Fall time  
td(off)  
tf  
17  
43  
-
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=200mA, VGS=0V  
*Pulsed  
www.rohm.com  
2/5  
2010.08 - Rev.A  
©2010 ROHM Co., Ltd. All rights reserved.  
Data Sheet  
RYB002N05  
ꢀ
Electrical characteristics curves  
0.2  
0.2  
0.1  
0
1
0.1  
VDS= 10V  
Pulsed  
VGS= 4.5V  
V
V
V
GS= 2.5V  
GS= 1.5V  
GS= 1.2V  
VGS= 4.5V  
Ta= 125°C  
V
V
V
GS= 2.5V  
GS= 1.5V  
GS= 1.2V  
Ta= 75°C  
Ta= 25°C  
VGS= 0.9V  
0.1  
VGS= 0.9V  
VGS= 0.8V  
Ta= 25°C  
Ta=25°C  
Pulsed  
VGS= 0.8V  
0.01  
0.001  
Ta=25°C  
Pulsed  
VGS= 0.7V  
0.8  
VGS= 0.7V  
8 10  
0
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
1
0
2
4
6
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.3 Typical Transfer Characteristics  
Fig.1 Typical Output Characteristics( Ⅰ)  
Fig.2 Typical Output Characteristics( Ⅱ)  
10000  
1000  
100  
10000  
1000  
100  
10000  
1000  
100  
VGS= 4.5V  
Pulsed  
Ta= 25°C  
Pulsed  
VGS= 2.5V  
Pulsed  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
VGS= 0.9V  
VGS= 1.2V  
VGS= 1.5V  
VGS= 2.5V  
VGS= 4.5V  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅰ)  
Fig.5 Static Drain-Source On-State  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅱ)  
Resistance vs. Drain Current(Ⅲ)  
10000  
1000  
100  
10000  
1000  
100  
10000  
1000  
100  
VGS= 0.9V  
Pulsed  
VGS= 1.5V  
Pulsed  
VGS= 1.2V  
Pulsed  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅳ)  
Fig.8 Static Drain-Source On-State  
Fig.9 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅴ)  
Resistance vs. Drain Current(Ⅵ)  
www.rohm.com  
3/5  
2010.08 - Rev.A  
©2010 ROHM Co., Ltd. All rights reserved.  
Data Sheet  
RYB002N05  
ꢀ
10  
1
5000  
4000  
3000  
2000  
1000  
0
VDS= 10V  
VGS=0V  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
ID= 0.01A  
ID= 0.20A  
1
0.1  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= 25°C  
Ta=25°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
0.1  
0.01  
0.01  
0.1  
DRAIN-CURRENT : ID[A]  
1
0
0.5  
1
1.5  
0
2
4
6
8
SOURCE-DRAIN VOLTAGE : VSD [V]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.12 Static Drain-Source On-State  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Fig.11 Reverse Drain Current  
vs. Sourse-Drain Voltage  
Resistance vs. Gate Source Voltage  
1000  
100  
10  
1000  
Ta=25°C  
Ta=25°C  
f=1MHz  
VGS=0V  
4
VDD=25V  
VGS=4.5V  
RG=10Ω  
Pulsed  
td(off)  
tf  
100  
10  
1
3
2
1
0
Ciss  
Ta=25°C  
VDD=25V  
ID= 0.2A  
RG=10Ω  
Pulsed  
Crss  
Coss  
td(on)  
tr  
0.1  
1
0.01  
0.1  
1
10  
100  
0.01  
1
0
0.5  
1
1.5  
DRAIN-CURRENT : ID[A]  
Fig.13 Switching Characteristics  
TOTAL GATE CHARGE : Qg [nC]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.14 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.15 Typical Capacitance  
vs. Drain-Source Voltage  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
4/5  
2010.08 - Rev.A  
Data Sheet  
RYB002N05  
ꢀ
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
GS  
DS  
R
L
V
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-1 Switching time measurement circuit  
Fig.1-2 Switching waveforms  
Notice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design  
ESD protection circuit.  
www.rohm.com  
5/5  
2010.08 - Rev.A  
©2010 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
R1010  
A
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