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IXTU1R4N60P

型号：

IXTU1R4N60P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

92 K

下载PDF手册
Advance Technical Information  
PolarHVTM  
Power MOSFET  
IXTP 1R4N60P  
IXTY 1R4N60P  
IXTU 1R4N60P  
VDSS = 600 V  
ID25 = 1.4 A  
RDS(on) ≤ 9.0  
Ω
N-Channel Enhancement Mode  
TO-251 AA (IXTU)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
600  
600  
V
V
V
Continuous  
Transient  
30  
40  
V
V
GS  
G
D
S
VGSM  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
1.4  
2.1  
A
A
(TAB)  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
1.4  
5
75  
A
mJ  
mJ  
TO-220 (IXTP)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 20 Ω  
,
10  
V/ns  
(TAB)  
G
D
TC = 25°C  
50  
W
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TO-252 (IXTY)  
TL  
Maximum tab temperature for soldering  
TO-252 package for 10s  
260  
°C  
G
S
Weight  
TO-220  
TO-252  
TO-251  
4.0  
0.35  
0.4  
g
g
g
(TAB)  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Symbol  
TestConditions  
Characteristic Values  
Features  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 25 μA  
VDS = VGS, ID = 25 μA  
VGS = 30 VDC, VDS = 0  
600  
V
V
3.0  
5.5  
50  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
20  
μA  
μA  
TJ = 125°C  
Advantages  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
9.0  
Ω
z
Easy to mount  
z
Space savings  
High power density  
z
DS99253(09/05)  
© 2005 IXYS All rights reserved  
IXTP 1R4N60P IXTY 1R4N60P  
IXTU 1R4N60P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
0.7  
1.1  
S
Ciss  
Coss  
Crss  
140  
17  
pF  
pF  
pF  
2.4  
td(on)  
tr  
td(off)  
tf  
10  
16  
25  
16  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
RG = 50 Ω (External)  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Qg(on)  
Qgs  
5.2  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
1.34  
5.2  
Qgd  
RthJC  
2.5 K/W  
RthCS  
RthCS  
(TO-220)  
(TO-251)  
0.25  
1.0  
K/W  
K/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
1.4  
A
A
V
ISM  
Repetitive  
4
TO-252 AA (IXTY) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 1.5 A, -di/dt = 100 A/μs  
500  
ns  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
.086  
0.35  
.094  
.045  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
b
b1  
b2  
0.64  
0.76  
5.21  
0.89  
1.14  
5.46  
.025  
.030  
.205  
.035  
.045  
.215  
Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
0.086  
0.035  
0.094  
0.045  
c
c1  
0.46  
0.46  
0.58  
0.58  
.018  
.018  
.023  
.023  
A2  
b
0
0.64  
0.13  
0.89  
0
0.005  
0.035  
0.025  
D
5.97  
6.22  
.235  
.245  
b1  
b2  
0.76  
5.21  
1.14  
5.46  
0.030  
0.205  
0.045  
0.215  
E
e
e1  
6.35  
2.28  
4.57  
6.73  
BSC  
BSC  
.250  
.090  
.180  
.265  
BSC  
BSC  
c
c1  
0.46  
0.46  
0.58  
0.58  
0.018  
0.018  
0.023  
0.023  
H
17.02  
17.78  
.670  
.700  
D
D1  
5.97  
4.32  
6.22  
5.21  
0.235  
0.170  
0.245  
0.205  
L
L1  
L2  
8.89  
1.91  
0.89  
9.65  
2.28  
1.27  
.350  
.075  
.035  
.380  
.090  
.050  
1. Gate  
2. Drain  
3. Source  
4. Drain  
E
E1  
6.35  
4.32  
6.73  
5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28BSC  
4.57BSC  
0.090BSC  
0.180BSC  
H
L
9.40 10.42  
0.370  
0.020  
0.410  
0.040  
0.51  
1.02  
L1  
L2  
L3  
0.64  
0.89  
2.54  
1.02  
1.27  
2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTP 1R4N60P IXTY 1R4N60P  
IXTU 1R4N60P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
1.4  
1.2  
1
2.2  
2
V
GS  
= 10V  
8V  
V
GS  
= 10V  
8V  
1.8  
1.6  
1.4  
1.2  
1
7V  
7V  
0.8  
0.6  
0.4  
0.2  
0
6V  
5V  
6V  
0.8  
0.6  
0.4  
0.2  
0
5V  
0
2
4
6
8
10  
12  
14  
16  
30  
2
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
1.4  
1.2  
1
3.00  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
V
= 10V  
8V  
GS  
V
GS  
= 10V  
7V  
6V  
0.8  
0.6  
0.4  
0.2  
0
I
= 1.4A  
D
I
= 0.7A  
D
5V  
0
5
10  
15  
20  
25  
-50 -25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
2.6  
2.4  
2.2  
2
1.6  
V
= 10V  
GS  
1.4  
1.2  
1
T = 125 C  
º
J
1.8  
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
º
T = 25 C  
J
0.8  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXTP 1R4N60P IXTY 1R4N60P  
IXTU 1R4N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
1.8  
1.6  
1.4  
1.2  
1
2
1.8  
1.6  
1.4  
1.2  
1
TJ = -40ºC  
25  
º
º
C
C
125  
T =125 C  
º
J
º
25 C  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
-40  
º
C
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
4.5  
4
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 0.7A  
D
G
3.5  
3
= 10mA  
2.5  
2
T = 125 C  
º
J
1.5  
1
T = 25 C  
º
J
0.5  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
1
2
Q G - NanoCoulombs  
3
4
5
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Re sis tance  
Fig. 11. Capacitance  
10.0  
1000  
100  
10  
f = 1MHz  
C
C
iss  
1.0  
oss  
C
rss  
30  
1
0.1  
0.00001 0.0001  
5
10  
15  
20  
VD S - Volts  
25  
35  
40  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
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