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RXH070N03TB

型号：

RXH070N03TB

品牌：

ROHM[ ROHM ]

页数：

7 页

PDF大小：

510 K

下载PDF手册
Data Sheet  
4V Drive Nch MOSFET  
RXH070N03  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
SOP8  
(8)  
(5)  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (SOP8).  
(1)  
(4)  
Application  
Switching  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
RXH070N03  
∗2  
(1) Source  
(2) Source  
(3) Source  
(4) Gate  
∗1  
(5) Drain  
(6) Drain  
(7) Drain  
(8) Drain  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
(1)  
(2)  
(3)  
(4)  
Limits  
Unit  
V
∗1 ESD PROTECTION DIODE  
∗2 BODY DIODE  
VDSS  
VGSS  
ID  
30  
Gate-source voltage  
20  
V
Continuous  
Pulsed  
7  
18  
A
Drain current  
*1  
IDP  
A
Continuous  
Pulsed  
IS  
1.6  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
18  
A
Power dissipation  
PD  
2.0  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
62.5  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
2011.05 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/6  
Data Sheet  
ꢀ
RXH070N03  
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=20V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=30V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V(BR)DSS  
30  
-
-
1
2.5  
28  
35  
39  
-
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
1.0  
-
V
VDS=10V, ID=1mA  
ID=7A, VGS=10V  
ID=7A, VGS=4.5V  
ID=7A, VGS=4.0V  
ID=7A, VDS=10V  
-
20  
25  
28  
-
Static drain-source on-state  
resistance  
*
RDS (on)  
m  
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
4.5  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
390  
150  
70  
7
-
pF VDS=10V  
pF VGS=0V  
-
-
pF f=1MHz  
ns ID=3.5A, VDD 15V  
ns VGS=10V  
ns RL=4.3  
ns RG=10  
nC ID=7A, VDD 15V  
nC VGS=5V  
nC  
-
*
*
*
*
*
*
*
30  
30  
8
-
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
5.8  
1.5  
2.3  
-
Qgs  
Qgd  
-
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=7A, VGS=0V  
*Pulsed  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.A  
2/6  
Data Sheet  
RXH070N03  
ꢀ
Electrical characteristic curves (Ta=25C)  
Fig.2 Typical Output Characteristics(Ⅱ)  
Fig.1 Typical Output Characteristics(Ⅰ)  
7
7
6
5
4
3
2
1
0
Ta=25°C  
Pulsed  
Ta=25°C  
Pulsed  
VGS= 2.8V  
VGS= 10V  
6
VGS= 10V  
VGS= 4.5V  
VGS= 4.0V  
VGS= 4.5V  
VGS= 4.0V  
5
VGS= 2.8V  
VGS= 2.5V  
4
3
2
1
0
VGS= 2.5V  
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
10  
10  
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.4 Static Drain-Source On-State  
Fig.3 Typical Transfer Characteristics  
Resistance vs. Drain Current(Ⅰ)  
10  
1
100  
VDS= 10V  
Pulsed  
Ta=25°C  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
0.1  
10  
VGS= 4.0V  
VGS= 4.5V  
VGS= 10V  
0.01  
0.001  
1
0
1
2
3
0.1  
1
DRAIN-CURRENT : ID[A]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.5 Static Drain-Source On-State  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅱ)  
Resistance vs. Drain Current(Ⅲ)  
100  
10  
1
100  
VGS= 4.5V  
Pulsed  
VGS= 10V  
Pulsed  
10  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
0.1  
1
10  
0.1  
1
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/6  
2011.05 - Rev.A  
Data Sheet  
RXH070N03  
ꢀ
Fig.8 Forward Transfer Admittance  
vs. Drain Current  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅳ)  
100  
100  
10  
1
VDS= 10V  
Pulsed  
10  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
VGS= 4.0V  
Pulsed  
1
0.1  
0.1  
1
10  
1.5  
10  
0.01  
0.1  
1
10  
10  
12  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.10 Static Drain-Source On-State  
Resistance vs. Gate Source Voltage  
Fig.9 Reverse Drain Current  
vs. Sourse-Drain Voltage  
50  
40  
30  
20  
10  
0
10  
Ta=25°C  
VGS=0V  
Pulsed  
ID= 3.5A  
Pulsed  
ID= 7.0A  
1
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
0.1  
0.01  
0
0.5  
1
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]  
SOURCE-DRAIN VOLTAGE : VSD [V]  
Fig.12 Dynamic Input Characteristics  
Fig.11 Switching Characteristics  
10  
8
1000  
100  
10  
Ta=25°C  
VDD=15V  
VGS=10V  
RG=10Ω  
td(off)  
tf  
Pulsed  
6
td(on)  
4
Ta=25°C  
VDD=15V  
ID= 7A  
Pulsed  
2
tr  
1
0
0.01  
0.1  
1
0
2
4
6
8
10  
TOTAL GATE CHARGE : Qg [nC]  
DRAIN-CURRENT : ID[A]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/6  
2011.05 - Rev.A  
Data Sheet  
RXH070N03  
ꢀ
Fig.13 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.14 Maximum Safe Operating Aera  
10000  
1000  
1000  
100  
10  
Operation in this area is limited by RDS(ON)  
(VGS=10V)  
Ciss  
PW=100us  
Crss  
PW=1ms  
1
100  
Coss  
PW = 10ms  
Ta=25°C  
Single Pulse  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
0.1  
0.01  
Ta=25°C  
f=1MHz  
VGS=0V  
DC operation  
10  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width  
10  
1
0.1  
0.01  
0.001  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
Rth(ch-a)=62.5°C/W  
Rth(ch-a)(t)=r(t)×Rth(ch-a)  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE WIDTH : Pw(s)  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/6  
2011.05 - Rev.A  
Data Sheet  
ꢀ
RXH070N03  
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
V
GS  
DS  
R
L
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2ꢀSwitching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
VGS  
I
D
VDS  
Q
g
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
VDD  
Charge  
Fig.2-2 Gate Charge Waveform  
Fig.2-1 Gate Charge Measurement Circuit  
Notice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design  
ESD protection circuit.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.A  
6/6  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  
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