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RXH125N03

型号:

RXH125N03

描述:

4V驱动N沟道MOSFET[ 4V Drive Nch MOSFET ]

品牌:

ROHM[ ROHM ]

页数:

7 页

PDF大小:

1137 K

Data Sheet  
4V Drive Nch MOSFET  
RXH125N03  
Structure  
Dimensions (Unit : mm)  
SOP8  
Silicon N-channel MOSFET  
(8)  
(5)  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (SOP8).  
(1)  
(4)  
Application  
Switching  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
RXH125N03  
(1) Source  
(2) Source  
(3) Source  
(4) Gate  
2  
1  
(5) Drain  
(6) Drain  
(7) Drain  
(8) Drain  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(3)  
(4)  
Symbol  
VDSS  
VGSS  
ID  
Limits  
30  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Drain-source voltage  
Gate-source voltage  
20  
V
Continuous  
12.5  
36  
A
Drain current  
Pulsed  
*1  
IDP  
A
Continuous  
Pulsed  
IS  
1.6  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
PD  
36  
A
Power dissipation  
2.0  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
62.5  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.03 - Rev.A  
1/6  
Data Sheet  
RXH125N03  
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=20V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=30V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V(BR)DSS  
30  
-
-
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
1
VGS (th)  
1.0  
-
2.5  
V
VDS=10V, ID=1mA  
ID=12.5A, VGS=10V  
ID=12.5A, VGS=4.5V  
ID=12.5A, VGS=4.0V  
ID=12.5A, VDS=10V  
-
7.5  
9.5  
10.0  
-
12.0  
Static drain-source on-state  
resistance  
*
RDS (on)  
m  
S
-
13.3  
-
14.0  
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
9.0  
-
-
-
-
-
-
-
-
-
-
-
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
1000  
340  
170  
12  
20  
55  
18  
12.7  
2.6  
6.0  
pF VDS=10V  
pF VGS=0V  
pF f=1MHz  
ns ID=6.3A, VDD 15V  
ns VGS=10V  
ns RL=2.38  
ns RG=10  
nC ID=12.5A, VDD 15V  
nC VGS=5V  
*
*
*
*
*
*
*
Turn-off delay time  
Fall time  
td(off)  
tf  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
Qgs  
Qgd  
nC  
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=12.5A, VGS=0V  
*Pulsed  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/6  
2011.03 - Rev.A  
Data Sheet  
RXH125N03  
Electrical characteristic curves (Ta=25C)  
Fig.1 Typical Output Characteristics ()  
Fig.2 Typical Output Characteristics ()  
12.5  
12.5  
10  
7.5  
5
VGS=10.0V  
VGS=4.5V  
Ta=25°C  
Pulsed  
VGS=4.0V  
10  
7.5  
5
VGS=10.0V  
VGS=4.5V  
VGS=2.5V  
VGS=3.0V  
VGS=4.0V  
VGS=3.0V  
VGS=2.5V  
2.5  
0
2.5  
0
Ta=25°C  
Pulsed  
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
Drain-Source Voltage : VDS [V]  
Drain-Source Voltage : VDS [V]  
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current  
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current  
100  
100  
VGS=10V  
pulsed  
Ta=25°C  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
VGS=4.0V  
VGS=4.5V  
VGS=10V  
10  
10  
1
0.01  
1
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Drain Current : ID [A]  
Drain Current : ID [A]  
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current  
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current  
100  
100  
VGS=4.5V  
pulsed  
VGS=4V  
pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
10  
10  
1
0.01  
1
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Drain Current : ID [A]  
Drain Current : ID [A]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/6  
2011.03 - Rev.A  
Data Sheet  
RXH125N03  
Fig.7 Forward Transfer Admittance vs. Drain Current  
Fig.8 Typical Transfer Characteristics  
100  
100  
10  
VDS=10V  
pulsed  
VDS=10V  
pulsed  
10  
1
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
0.1  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
0.1  
0.01  
0.01  
0.001  
0.001  
0.01  
0.1  
1
10  
100  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Gate-Source Voltage : VGS [V]  
Drain Current : ID [A]  
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage  
50  
Fig.9 Source Current vs. Source-Drain Voltage  
100  
10  
VGS=0V  
pulsed  
Ta=25°C  
pulsed  
40  
ID=6.3A  
ID=12.5A  
30  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
20  
10  
0
0.1  
0.01  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
Gate-Source Voltage : VGS [V]  
Source-Drain Voltage : VSD [V]  
Fig.11 Switching Characteristics  
Fig.12 Dynamic Input Characteristics  
10000  
1000  
100  
10  
10  
8
V
DD15V  
Ta=25°C  
VGS=10V  
RG=10Ω  
Ta=25°C  
Pulsed  
VDD=15V  
ID=12.5A  
Pulsed  
tf  
6
td(off)  
4
tr  
2
td(on)  
1
0
0.01  
0.1  
1
10  
100  
0
5
10  
15  
20  
25  
Total Gate Charge : Qg [nC]  
Drain Current : ID [A]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/6  
2011.03 - Rev.A  
Data Sheet  
RXH125N03  
Fig.14 Maximum Safe Operating Area  
Fig.13 Typical Capacitance vs. Drain-Source Voltage  
100  
10  
Operation in this area is limited by RDS(on)  
(VGS = 10V)  
10000  
1000  
100  
PW = 100μs  
PW = 1ms  
Ciss  
1
PW = 10ms  
Coss  
0.1  
0.01  
Crss  
Ta=25°C  
Single Pulse  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
DC Operation  
Ta=25°C  
f=1MHz  
VGS=0V  
10  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Drain-Source Voltage : VDS [ V ]  
Drain-Source Voltage : VDS [V]  
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width  
10  
Ta=25°C  
Single Pulse  
1
0.1  
0.01  
Mounted on a ceramic board.  
0.001  
(30mm × 30mm × 0.8mm)  
Rth(ch-a)=62.5°C/W  
Rth(ch-a)(t)=r(t)×Rth(ch-a)  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width : Pw (s)  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/6  
2011.03 - Rev.A  
Data Sheet  
RXH125N03  
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
GS  
DS  
R
L
V
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2Switching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
V
GS  
I
D
VDS  
Q
g
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
VDD  
Charge  
Fig.2-2 Gate Charge Waveform  
Fig.2-1 Gate Charge Measurement Circuit  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
6/6  
2011.03 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  
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