IXTH 20N50D
IXTT 20N50D
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXTH) Outline
VDS= 30 V, ID =10 A, Note 1
4.0
7.5
S
1
2
3
Ciss
Coss
Crss
2500
400
pF
pF
pF
VGS = -10 V, VDS = 25 V, f = 1 MHz
100
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
VGS= 0 V to -10 V, VDS = 0.5 • VDSX
Terminals:
1 - Gate
3 - Source Tab - Drain
ID = 10 A, RG = 4.7 Ω (External),
110
75
2 - Drain
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
Qg(on)
125
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Qgs
Qgd
VGS = 10 V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
35
51
nC
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
RthJC
RthCK
0.31
K/W
K/W
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
0.25
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
∅P
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Q
Symbol
VSD
TestConditions
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
IF = ID25, VGS = -10 V, Note 1
0.85
510
1.5
V
TO-268 (IXTTH) Outline
trr
IF = 20A, -di/dt = 100 A/μs, VR = 100 V
vGS= -10 V
ns
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Terminals:
1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
