PNP SILICON PLANAR MEDIUM POWER
ZTX756
ZTX757
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
300 Volt VCEO
0.5 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX756
-200
ZTX757
-300
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-200
-300
-5
-1
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
-0.5
1
A
Ptot
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX756
ZTX757
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-200
-200
-5
-300
-300
-5
V
V
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
IE=-100µA, IC=0
Collector Cut-Off
Current
-100
-100
-0.5
-1.0
-1.0
nA
nA
VCB=-160V, IE=0
VCB=-200V, IE=0
-100
-100
Emitter Cut-Off
Current
IEBO
nA
VEB=-3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
hFE
-0.5
-1.0
-1.0
V
IC=-100mA,
IB=-10mA*
Base-Emitter
Saturation Voltage
V
IC=-100mA,
IB=-10mA*
Base-Emitter
Turn-On Voltage
V
IC=-100mA, VCE=-5V*
Static Forward
Current Transfer
Ratio
50
40
50
40
IC=-100mA, VCE=-5V*
IC=-10mA, VCE=-5V*
Transition
Frequency
fT
30
30
MHz IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance Cobo
20
20
pF
VCB=-20V, f=1MHz
3-265
