ZXTEM322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
100
80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
CBO
CEO
EBO
V
7.5
V
Peak Pulse Current
I
I
I
5
A
CM
(a)
Continuous Collector Current
3.5
A
C
B
Base Current
1000
mA
(a)
Power Dissipation at TA=25°C
P
P
P
P
1.5
12
W
D
D
D
D
Linear Derating Factor
mW/ЊC
(b)
Power Dissipation at TA=25°C
Linear Derating Factor
2.45
19.6
W
mW/ЊC
(d)
Power Dissipation at TA=25°C
Linear Derating Factor
1
8
W
mW/ЊC
(e)
Power Dissipation at TA=25°C
Linear Derating Factor
3
24
W
mW/ЊC
Operating & Storage Temperature Range
Junction Temperature
T :T
-55 to +150
150
ЊC
ЊC
j
stg
T
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
(a)
Junction to Ambient
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JA
(b)
Junction to Ambient
51
(d)
Junction to Ambient
125
42
(e)
Junction to Ambient
NOTES
(a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at tՅ5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW
ISSUE 2 - JUNE 2006
2
SEMICONDUCTORS
