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UZDT6702

型号:

UZDT6702

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

103 K

SM-8 COMPLEMENTARY MEDIUM POWER  
ZDT6702  
DARLINGTON TRANSISTORS  
ISSUE 2 – February 1997  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
NPN  
PNP  
SM-8  
PARTMARKING DETAIL – T6702  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
NPN  
80  
PNP  
-80  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
-60  
V
10  
-10  
V
Peak Pulse Current  
4
-4  
A
Continuous Collector Current  
IC  
1.75  
-1.75  
A
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
ZDT6702  
NPN TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
60  
10  
200  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=60V  
Collector-Emitter  
Breakdown Voltage  
100  
15  
Emitter-Base  
Breakdown Voltage  
Collector Cutoff  
Current  
0.5  
10  
10  
nA  
µA  
VCB=60V,T  
=100°C  
Emitter Cutoff Current IEBO  
0.1  
50  
10  
nA  
nA  
VEB=8V  
Colllector-Emitter  
Cutoff Current  
ICES  
500  
VCE=60V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
0.83  
1.0  
0.95  
1.28  
V
V
IC=0.5A, IB=0.5mA*  
IC=1.75A, IB=2mA*  
Base-Emitter  
Saturation Voltage  
1.68  
1.55  
1.85  
1.75  
V
V
IC=1.75A, IB=2mA*  
IC=1.75A, VCE=5V*  
Base-Emitter  
Turn-On Voltage  
Static Forward  
Current Transfer Ratio  
5K  
5K  
3.5K  
0.5K  
13K  
13K  
9K  
IC=10mA, VCE=5V  
IC=500mA, VCE=5V  
IC=2A, VCE=5V  
2K  
IC=4A, VCE=5V*  
Transition Frequency fT  
140  
MHz  
IC=100mA, VCE=10V  
f=100MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
70  
pF  
pF  
µs  
µs  
VEB=500mV, f=1MHz  
VCB=10V, f=1MHz  
15  
0.5  
2.1  
IC=500mA, VCE=10V  
B1=IB2=0.5mA  
I
toff  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ZDT6702  
PNP TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -80  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
-120  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -60  
-90  
-15  
-0.5  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
-10  
Collector Cutoff  
Current  
ICBO  
-10  
-10  
nA  
µA  
V
CB=-60V  
VCB=-60V, T  
=100°C  
amb  
Emitter Cutoff Current IEBO  
-0.1  
-50  
-10  
nA  
nA  
VEB=-8V  
Collector-Emitter  
Cutoff Current  
ICES  
-500  
VCE =-60V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.86  
-1.05  
-1.0  
-1.28  
V
V
IC=-0.5A, IB=-0.5mA*  
IC=-1.75A, IB=-2mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-1.7  
-1.9  
V
V
IC=-1.75A, IB=-2mA*  
IC=-1.75A, VCE=-5V*  
Base-Emitter Turn-On VBE(on)  
Voltage  
-1.55  
-1.85  
Static Forward  
Current Transfer Ratio  
hFE  
2K  
2K  
1.5K  
1K  
8K  
8K  
7K  
4K  
IC=-10mA, VCE=-5V*  
IC=-500mA, VCE=-5V*  
IC=-2A, VCE=-5V*  
IC=-4A, VCE=-5V*  
Transition Frequency fT  
140  
MHz  
IC=-100mA, VCE=-10V  
f=100MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
90  
pF  
pF  
µs  
µs  
VEB=-0.5V, f=1MHz  
VCE=-10V, f=1MHz  
IC=-0.5A, VCE=-10V  
25  
0.75  
1.2  
I
B1=IB2=-0.5mA  
toff  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ZDT6702  
TYPICAL CHARACTERISTICS (NPN TRANSISTOR)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1m  
1m  
1m  
10m  
100m  
1
10  
10  
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
20K  
16K  
12K  
8K  
2.0  
1.6  
1.2  
0.8  
0.4  
0
4K  
0
10m  
100m  
1
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
2.0  
1.6  
1.2  
0.8  
0.4  
0
10  
1
100m  
10m  
100m  
10m  
100m  
1
IC - Collector Current (A)  
1
10  
VCE - Collector Emitter Voltage (V)  
100  
VBE(on) v IC  
Safe Operating Area  
ZDT6702  
TYPICAL CHARACTERISTICS (PNP TRANSISTOR)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
1m  
1m  
1m  
10m  
100m  
1
10  
10  
10  
1m  
10m  
100m  
1
IC - Collector Current (A)  
10  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
20k  
15k  
10k  
5k  
2.0  
1.6  
1.2  
0.8  
0.4  
0
0
10m  
100m  
1
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
2.0  
1.6  
1.2  
0.8  
0.4  
0
10  
1
100m  
10m  
10m  
100m  
1
100m  
1
10  
100  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
ZDT6702  
OTHER CHARACTERISTICS  
4
3
2
1
0
50  
40  
30  
20  
10  
0
100us 1ms 10ms 100ms 1s  
10s 100s  
0
20  
40 60 80 100 120 140 160  
Pulse Width  
T - Ambient Temperature (° C)  
Derating curve  
(single device)  
Transient Thermal Resistance  
(single device)  
2.00  
1.50  
1.00  
0.50  
0
2.00  
1.50  
1.00  
0.50  
0
10  
100  
10  
100  
VCE - Collector Emitter Voltage (V)  
VCE - Collector Emitter Voltage (V)  
Voltage Derating  
Voltage Derating  
ZDT6702  
He  
E
A
A1  
o
45°  
c
Dim  
Millimetres  
Inches  
Lp  
Min  
–
Typ  
–
Max  
Min  
–
Typ  
Max  
0.067  
0.004  
–
3
A
A1  
b
1.7  
0.1  
–
–
0.02  
–
–
0.0008  
–
–
0.7  
–
0.028  
c
0.24  
6.3  
3.3  
–
0.32  
6.7  
3.7  
–
0.009  
0.248  
0.130  
–
–
0.013  
0.264  
0.145  
–
D
–
–
–
E
–
e1  
e2  
He  
Lp  
α
4.59  
1.53  
–
0.180  
0.060  
–
–
–
–
–
6.7  
0.9  
–
7.3  
–
0.264  
0.035  
–
0.287  
–
–
–
–
15°  
–
–
15°  
–
–
10°  
–
10°  
β
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1997  
Internet:  
http://www.zetex.com  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied  
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or  
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of  
any product or service.  
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