PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
ZTX968
FEATURES
*
*
*
*
*
4.5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltage
High gain
Spice model available
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-15
-12
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Peak Pulse Current
-20
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-4.5
A
Ptotp
Ptot
1.58
W
W
°C
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-15
-12
-6
-28
-20
-8
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
V
CB=-12V
VCB=-12V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-50
-100
-220
-100
-150
-300
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-5A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-930
-1050 mV
IC=-5A, IB=-200mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-830
-1000 mV
IC=-5A, VCE=-1V*
3-333
