IXTA2N80P IXTP2N80P
IXTU2N80P IXTY2N80P
Symbol
gfs
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.4
2.4
S
Ciss
Coss
Crss
440
36
pF
pF
pF
4.4
td(on)
tr
td(off)
tf
25
35
53
28
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 30 Ω (External)
Qg(on)
Qgs
10.6
3.7
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
4.5
RthJC
RthCS
1.80 °C/W
°C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
2
A
A
ISM
Repetitive
6
TO-220 (IXTP) Outline
VSD
trr
IF = IS, VGS = 0 V, Pulse test
1.5
V
IF = 2 A, -di/dt = 100 A/μs,
650
ns
VR = 100 V, VGS = 0 V
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
