找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

CYTA4494DTR13

型号:

CYTA4494DTR13

品牌:

CENTRAL[ CENTRAL SEMICONDUCTOR CORP ]

页数:

2 页

PDF大小:

104 K

TM  
CYTA4494D  
Central  
SURFACE MOUNT  
DUAL, ISOLATED  
COMPLEMENTARY NPN & PNP  
HIGH VOLTAGE  
Semiconductor Corp.  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CYTA4494D  
type consists of one (1) NPN high voltage silicon  
transistor and one (1) complementary PNP high  
voltage silicon transistor packaged in an epoxy  
molded SOT-228 surface mount case.  
Manufactured by the epitaxial planar process,  
this SUPERmini™ device is ideal for high  
voltage applications.  
SILICON TRANSISTORS  
MARKING CODE: FULL PART NUMBER  
SOT-228 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
NPN (Q1)  
450  
PNP (Q2)  
400  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
V
V
CBO  
400  
400  
CEO  
Emitter-Base Voltage  
Collector Current  
V
6.0  
300  
2.0  
6.0  
300  
2.0  
V
mA  
W
EBO  
I
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
62.5  
°C  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
nA  
nA  
nA  
V
I
V
V
V
V
V
=350V  
=350V  
=400V  
=400V  
=4.0V  
100  
500  
CBO  
CB  
CE  
CB  
CE  
BE  
I
CES  
I
100  
500  
CBO  
I
CES  
I
100  
100  
400  
EBO  
BV  
I =100µA  
450  
CBO  
C
BV  
I =100µA  
C
450  
400  
V
CES  
BV  
I =1.0mA  
400  
400  
V
CEO  
C
BV  
I =10µA  
E
6.0  
6.0  
V
EBO  
V
I =1.0mA, I =0.1mA  
0.40  
0.50  
0.75  
0.75  
40  
0.40  
0.50  
0.75  
0.75  
40  
V
CE(SAT)  
C
B
V
I =10mA, I =1.0mA  
V
CE(SAT)  
C
B
V
I =50mA, I =5.0mA  
V
CE(SAT)  
C
B
V
I =10mA, I =1.0mA  
V
BE(SAT)  
C
B
h
V
=10V, I =1.0mA  
FE  
CE  
CE  
CE  
CE  
C
h
V
V
V
=10V, I =10mA  
C
50  
45  
20  
200  
50  
45  
20  
200  
FE  
h
=10V, I =50mA  
FE  
C
h
=10V, I =100mA  
C
FE  
R0 (14-March 2005)  
CYTA4494D  
TM  
Central  
SURFACE MOUNT  
DUAL, ISOLATED  
COMPLEMENTARY NPN & PNP  
HIGH VOLTAGE  
Semiconductor Corp.  
SILICON TRANSISTORS  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (Continued): (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
MHz  
pF  
f
V
V
V
=10V, I =10mA, f=10MHz  
C
20  
20  
T
CE  
CB  
EB  
C
=20V, I =0, f=1.0MHz  
7.0  
130  
7.0  
130  
ob  
E
C
ib  
=0.5V, I =0, f=1.0MHz  
C
pF  
SOT-228 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) EMITTER Q1  
2) BASE Q1  
3) EMITTER Q2  
4) BASE Q2  
5) COLLECTOR Q2  
6) COLLECTOR Q2  
7) COLLECTOR Q1  
8) COLLECTOR Q1  
MARKING CODE:  
FULL PART NUMBER  
R0 (14-March 2005)  
厂商 型号 描述 页数 下载

CYT

CYT1001A [ Single Integrated LIne-ReductIon LED Control Integrated Circuit ] 11 页

CYT

CYT1001B [ Single Integrated LIne-ReductIon LED Control Integrated Circuit ] 11 页

CYT

CYT1001D [ Single Integrated LIne-ReductIon LED Control Integrated Circuit ] 11 页

ETC

CYT101 电压和电流控制器[ Voltage and Current Controller ] 3 页

ETC

CYT101AM/D 电压和电流控制器[ Voltage and Current Controller ] 3 页

ETC

CYT101M/D 电压和电流控制器[ Voltage and Current Controller ] 3 页

ETC

CYT167ELG 400毫安CMOS LDO稳压器[ 400mA CMOS LDO Regulator ] 7 页

CENTRAL

CYT1933D [ Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, PLASTIC PACKAGE-8 ] 2 页

ETC

CYT2506 - 12号的铝制车身绘( RAL 7032 ) 7 页

ETC

CYT2508 - 12号的铝制车身绘( RAL 7032 ) 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.282768s