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IXTP28P065T

型号：

IXTP28P065T

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

200 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
IXTA28P065T  
IXTP28P065T  
VDSS = - 65V  
ID25 = - 28A  
RDS(on)  
≤
45mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 65  
- 65  
V
V
D (Tab)  
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 28  
- 90  
A
A
G
D
S
D (Tab)  
= Drain  
IA  
ES  
TC = 25°C  
TC = 25°C  
- 28  
200  
A
G = Gate  
S = Source  
D
mJ  
Tab = Drain  
PD  
TC = 25°C  
83  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z Extended FBSOA  
z Fast Intrinsic Diode  
Weight  
TO-220  
TO-263  
3.0  
2.5  
g
g
z
Low RDS(ON) and QG  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 65  
V
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
- 2.5  
- 4.5  
V
z
z
±50 nA  
z
IDSS  
- 3 μA  
-100 μA  
z
Current Regulators  
TJ = 125°C  
z
Battery Charger Applications  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
45 mΩ  
DS99968B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA28P065T  
IXTP28P065T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
10  
16  
S
Ciss  
Coss  
Crss  
2030  
270  
pF  
pF  
pF  
127  
td(on)  
tr  
td(off)  
tf  
21  
29  
36  
23  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
46  
20  
10  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
1.5 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 28  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 28A, VGS = 0V, Note 1  
-112  
-1.5  
TO-220 Outline  
trr  
QRM  
IRM  
31  
34  
- 2.2  
ns  
nC  
A
IF = -14A, -di/dt = -100A/μs  
VR = - 33V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA28P065T  
IXTP28P065T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-28  
-24  
-20  
-16  
-12  
-8  
-110  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
- 9V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 8V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
-4  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
150  
150  
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -14A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-28  
-24  
-20  
-16  
-12  
-8  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = -10V  
- 9V  
- 8V  
VGS = -10V  
I D = - 28A  
- 7V  
- 6V  
I D = -14A  
- 5V  
-4  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -14A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-30  
-25  
-20  
-15  
-10  
-5  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA28P065T  
IXTP28P065T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
4
0
0
0
-4  
-8  
-12  
-16  
-20  
-24  
-28  
-32  
-36  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-1.4  
-40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 33V  
I D = -14A  
I
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
-
10,000  
1,000  
100  
100  
= 1 MHz  
f
RDS(on) Limit  
25µs  
100µs  
1ms  
C
iss  
-
10  
C
oss  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
10ms  
C
rss  
100ms  
-
1
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-1  
- 10  
- 100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA28P065T  
IXTP28P065T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Drain Current  
33  
31  
29  
27  
25  
23  
21  
19  
32  
30  
28  
26  
24  
22  
20  
RG = 10Ω, VGS = -10V  
VDS = - 33V  
TJ = 25ºC  
RG = 10Ω, VGS = -10V  
VDS = - 33V  
I D = - 28A  
I D = -14A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-14  
-16  
-18  
-20  
-22  
-24  
-26  
-28  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
38  
28  
50  
46  
42  
38  
34  
30  
26  
22  
18  
tf  
td(off) - - - -  
27  
26  
25  
24  
23  
22  
21  
20  
t r  
td(on) - - - -  
34  
30  
26  
22  
18  
14  
RG = 10Ω, VGS = -10V  
TJ = 125ºC, VGS = -10V  
VDS = - 33V  
VDS = - 33V  
I D = - 28A, -14A  
I D = - 28A, -14A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
30  
28  
26  
24  
22  
20  
18  
44  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
tf  
t
d(off) - - - -  
tf  
td(off) - - - -  
40  
36  
32  
28  
24  
20  
RG = 10Ω, VGS = -10V  
TJ = 125ºC, VGS = -10V  
VDS = - 33V  
VDS = - 33V  
TJ = 25ºC  
I D = -14A  
TJ = 125ºC  
I D = - 28A  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
-14  
-16  
-18  
-20  
-22  
-24  
-26  
-28  
ID - Amperes  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA28P065T  
IXTP28P065T  
Fig. 19. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_28P065T(A1)11-05-10-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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