IXTA 5N50P IXTP 5N50P
IXTY 5N50P
TO-263 (IXTA) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
3.0
4.7
S
Ciss
Coss
Crss
620
72
pF
pF
pF
6.3
td(on)
tr
td(off)
tf
22
26
65
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 30 Ω (External)
Qg(on)
Qgs
12.6
4.3
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
5.0
RthJC
RthCS
1.4°C/W
°C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VGS = 0 V
5
A
A
ISM
Repetitive
15
VSD
trr
IF = IS, VGS = 0 V, Pulse test
1.5
V
IF = 5 A, -di/dt = 100 A/μs,
400
ns
VR = 100 V, VGS = 0 V
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-252 (IXTY) Outline
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
Pins: 1 - Gate
3 - Source
2,4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
