SM-8 DUAL NPN MEDIUM POWER
ZDT649
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL T649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
35
25
5
V
V
Peak Pulse Current
6
A
Continuous Collector Current
IC
2
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 333
