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FZT489

型号:

FZT489

描述:

NPN硅平面中功率晶体管[ NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

1 页

PDF大小:

45 K

SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FZT489  
ISSUE 3 - NOVEMBER 1995  
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT589  
FZT489  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
30  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
A
ICM  
4
A
Base Current  
IB  
200  
2
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=30V  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
50  
30  
5
V
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
ICES  
VCES=30V  
VEB=4V  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.6  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn On Voltage  
1.0  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
100  
100  
60  
IC=1mA, VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=4A, VCE=2V*  
300  
10  
20  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT449 datasheet  
3 - 188  
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