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NZT7053

型号：

NZT7053

描述：

NPN达林顿晶体管[ NPN Darlington Transistor ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

4 页

PDF大小：

45 K

下载PDF手册
Discr ete P OWER & Sign a l  
Tech n ologies  
2N7052  
2N7053  
NZT7053  
C
E
C
TO-92  
C
B
B
TO-226  
C
E
SOT-223  
B
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely high  
gain at collector currents to 1.0 A and high breakdown voltage.  
Sourced from Process 06.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
100  
100  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
12  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N7052  
2N7053  
*NZT7053  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
1,000  
8.0  
125  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
50  
125  
°C/W  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
ã 1997 Fairchild Semiconductor Corporation  
NPN Darlington Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0  
100  
100  
12  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
I = 100 A, I = 0  
µ
C
E
IE = 1.0 mA, IC = 0  
VCB = 80 V, IE = 0  
VCE = 80 V, IE = 0  
VEB = 7.0 V, IC = 0  
0.1  
0.2  
0.1  
A
A
A
µ
µ
µ
ICES  
Collector-Cutoff Current  
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 100 mA, VCE = 5.0 V  
IC = 1.0 A, VCE = 5.0 V  
IC = 100 mA, IB = 0.1 mA  
10,000  
1,000  
20,000  
1.5  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
VCE(sat)  
VBE(on)  
IC = 100 mA, VBE = 5.0 V  
2.0  
V
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
IC = 100 mA, VCE = 5.0 V,  
200  
MHz  
pF  
FT  
Collector-Base Capacitance  
VCB = 10 V,f = 1.0 MHz  
10  
8.0  
2N7052  
2N7053  
Ccb  
*Pulse Test: Pulse Width £300 ms, Duty Cycle £1.0%  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
100  
2
1.6  
1.2  
0.8  
0.4  
0
β = 1000  
80  
60  
125 °C  
- 40°C  
40  
25 °C  
25 °C  
125 °C  
20  
0
- 40°C  
0.001  
0.01  
0.1  
1
10  
100  
1000  
IC - COLLECTOR CURRENT (A)  
IC - COLLECTOR CURRENT (mA)  
NPN Darlington Transistor  
(continued)  
Typical Characteristics (continued)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base Emitter ON Voltage vs  
Collector Current  
2
2
1.6  
1.2  
0.8  
0.4  
0
β = 1000  
- 40°C  
1.6  
- 40°C  
25 °C  
25 °C  
1.2  
125 °C  
125 °C  
0.8  
VCE= 5V  
0.4  
0
10  
100  
1000  
10  
100  
1000  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Junction Capacitance vs  
Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
100  
10  
1
100  
VCB = 80V  
10  
1
C
ib  
0.1  
0.01  
C
cb  
25  
50  
75  
100  
125  
0.1  
1
10  
100  
TA- AMBIENT TEMPERATURE (ºC)  
REVERSE BIAS VOLTAGE (V)  
Power Dissipation vs  
Ambient Temperature  
Typical Collector-Emitter Leakage  
Current vs Temperature  
1
0.75  
0.5  
0.25  
0
1000  
VCE = 80V  
VBE = 0  
SOT-223  
100  
10  
1
TO-92  
TO-226  
0.1  
0
40  
80  
120  
160  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
º
TJ - JUNCTION TEMPERATURE ( C)  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench™  
QS™  
CROSSVOLT™  
E2CMOSTM  
FACT™  
FACT Quiet Series™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
TinyLogic™  
FAST®  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
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