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NZT7053_NL

型号：

NZT7053_NL

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

8 页

PDF大小：

305 K

下载PDF手册
Discr ete P OWER & Sign a l  
Tech n ologies  
2N7052  
2N7053  
NZT7053  
C
E
C
TO-92  
C
B
B
TO-226  
C
E
SOT-223  
B
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely high  
gain at collector currents to 1.0 A and high breakdown voltage.  
Sourced from Process 06.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
100  
100  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
12  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N7052  
2N7053  
*NZT7053  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
1,000  
8.0  
125  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
50  
125  
°C/W  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
ã 1997 Fairchild Semiconductor Corporation  
NPN Darlington Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0  
100  
100  
12  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
I = 100 A, I = 0  
µ
C
E
IE = 1.0 mA, IC = 0  
VCB = 80 V, IE = 0  
VCE = 80 V, IE = 0  
VEB = 7.0 V, IC = 0  
0.1  
0.2  
0.1  
A
A
A
µ
µ
µ
ICES  
Collector-Cutoff Current  
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 100 mA, VCE = 5.0 V  
IC = 1.0 A, VCE = 5.0 V  
IC = 100 mA, IB = 0.1 mA  
10,000  
1,000  
20,000  
1.5  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
VCE(sat)  
VBE(on)  
IC = 100 mA, VBE = 5.0 V  
2.0  
V
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
IC = 100 mA, VCE = 5.0 V,  
200  
MHz  
pF  
FT  
Collector-Base Capacitance  
VCB = 10 V,f = 1.0 MHz  
10  
8.0  
2N7052  
2N7053  
Ccb  
*Pulse Test: Pulse Width £300 ms, Duty Cycle £1.0%  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
100  
2
1.6  
1.2  
0.8  
0.4  
0
β
= 1000  
80  
60  
125 °C  
- 40°C  
40  
25 °C  
25 °C  
125 °C  
20  
0
- 40°C  
0.001  
0.01  
0.1  
1
10  
100  
IC - COLLECTOR CURRENT (mA)  
1000  
IC - COLLECTOR CURRENT (A)  
NPN Darlington Transistor  
(continued)  
Typical Characteristics (continued)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base Emitter ON Voltage vs  
Collector Current  
2
2
1.6  
1.2  
0.8  
0.4  
0
β = 1000  
- 40°C  
1.6  
- 40°C  
25 °C  
25 °C  
1.2  
125 °C  
125 °C  
0.8  
VCE= 5V  
0.4  
0
10  
100  
1000  
10  
100  
1000  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Junction Capacitance vs  
Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
100  
10  
1
100  
VCB = 80V  
10  
1
C
ib  
0.1  
0.01  
C
cb  
25  
50  
75  
100  
125  
0.1  
1
10  
100  
TA- AMBIENT TEMPERATURE (ºC)  
REVERSE BIAS VOLTAGE (V)  
Power Dissipation vs  
Ambient Temperature  
Typical Collector-Emitter Leakage  
Current vs Temperature  
1
0.75  
0.5  
0.25  
0
1000  
VCE = 80V  
VBE = 0  
SOT-223  
100  
10  
1
TO-92  
TO-226  
0.1  
0
40  
80  
120  
160  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
º
TJ - JUNCTION TEMPERATURE ( C)  
TO-92 Tape and Reel Data  
TO-92 Packaging  
Configuration: Figure 1.0  
TAPE and REEL OPTION  
See Fig 2.0 for various  
Reeling Styles  
FSCINT Label sample  
FAIRCHILD SEMICONDUCTOR CORPORATION  
HTB:B  
QTY:  
10000  
LOT:  
CBVK741B019  
NSID:  
D/C1:  
SPEC:  
PN2222N  
FSCINT  
Label  
SPEC REV:  
QA REV:  
D9842  
B2  
5 Reels per  
Intermediate Box  
(FSCINT)  
Customized  
Label  
F63TNR Label sample  
LOT: CBVK741B019  
F63TNR  
Label  
QTY: 2000  
SPEC:  
FSID: PN222N  
Customized  
Label  
D/C1: D9842  
D/C2:  
QTY1:  
QTY2:  
SPEC REV:  
CPN:  
N/F: F  
(F63TNR)3  
375mm x 267mm x 375mm  
Intermediate Box  
TO-92 TNR/AMMO PACKING INFROMATION  
AMMO PACK OPTION  
See Fig 3.0 for 2 Ammo  
Pack Options  
Packing  
Style  
A
Quantity  
2,000  
EOL code  
D26Z  
Reel  
E
2,000  
D27Z  
Ammo  
M
2,000  
D74Z  
P
2,000  
D75Z  
FSCINT  
Label  
Unit weight  
Reel weight with components  
Ammo weight with components = 1.02 kg  
= 0.22 gm  
= 1.04 kg  
Max quantity per intermediate box = 10,000 units  
5 Ammo boxes per  
Intermediate Box  
327mm x 158mm x 135mm  
Immediate Box  
Customized  
Label  
F63TNR  
Label  
Customized  
Label  
333mm x 231mm x 183mm  
Intermediate Box  
(TO-92) BULK PACKING INFORMATION  
BULK OPTION  
See Bulk Packing  
Information table  
EOL  
CODE  
LEADCLIP  
DESCRIPTION  
QUANTITY  
2.0 K / BOX  
DIMENSION  
J18Z  
TO-18 OPTION STD  
TO-5 OPTION STD  
NO LEAD CLIP  
Anti-static  
Bubble Sheets  
J05Z  
NO LEAD CLIP  
NO LEADCLIP  
1.5 K / BOX  
2.0 K / BOX  
FSCINT Label  
NO EOL  
CODE  
TO-92 STANDARD  
STRAIGHT FOR: PKG 92,  
94 (NON PROELECTRON  
SERIES), 96  
L34Z  
TO-92 STANDARD  
STRAIGHT FOR: PKG 94  
NO LEADCLIP  
2.0 K / BOX  
(PROELECTRON SERIES  
2000 units per  
EO70 box for  
std option  
114mm x 102mm x 51mm  
Immediate Box  
BCXXX, BFXXX, BSRXXX),  
97, 98  
5 EO70 boxes per  
intermediate Box  
530mm x 130mm x 83mm  
Intermediate box  
Customized  
Label  
FSCINT Label  
10,000 units maximum  
per intermediate box  
for std option  
March 2001, Rev. B1  
©2001 Fairchild Semiconductor Corporation  
TO-92 Tape and Reel Data, continued  
TO-92 Reeling Style  
Configuration: Figure 2.0  
Machine Option “A” (H)  
Machine Option “E” (J)  
Style “A”, D26Z, D70Z (s/h)  
Style “E”, D27Z, D71Z (s/h)  
TO-92 Radial Ammo Packaging  
Configuration: Figure 3.0  
FIRST WIRE OFF IS COLLECTOR  
ADHESIVE TAPE IS ON THE TOP SIDE  
FLAT OF TRANSISTOR IS ON TOP  
FIRST WIRE OFF IS EMITTER  
ADHESIVE TAPE IS ON THE TOP SIDE  
FLAT OF TRANSISTOR IS ON BOTTOM  
ORDER STYLE  
D74Z (M)  
ORDER STYLE  
D75Z (P)  
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)  
ADHESIVE TAPE IS ON BOTTOM SIDE  
FLAT OF TRANSISTOR IS ON TOP  
FIRST WIRE OFF IS EMITTER (ON PKG. 92)  
ADHESIVE TAPE IS ON BOTTOM SIDE  
FLAT OF TRANSISTOR IS ON BOTTOM  
September 1999, Rev. B  
TO-92 Tape and Reel Data, continued  
TO-92 Tape and Reel Taping  
Dimension Configuration: Figure 4.0  
Hd  
P
Pd  
b
Ha  
W1  
d
S
L
H1  
HO  
L1  
WO  
t
W2  
W
t1  
P1 F1  
P2  
DO  
ITEM DESCRIPTION  
SYMBOL  
DIMENSION  
PO  
b
0.098 (max)  
Base of Package to Lead Bend  
Component Height  
Ha  
HO  
H1  
Pd  
Hd  
P
0.928 (+/- 0.025)  
0.630 (+/- 0.020)  
0.748 (+/- 0.020)  
0.040 (max)  
User Direction of Feed  
Lead Clinch Height  
Component Base Height  
Component Alignment ( side/side )  
Component Alignment ( front/back )  
Component Pitch  
0.031 (max)  
0.500 (+/- 0.020)  
0.500 (+/- 0.008)  
0.150 (+0.009, -0.010)  
0.247 (+/- 0.007)  
0.104 (+/- 0 .010)  
0.018 (+0.002, -0.003)  
0.429 (max)  
PO  
P1  
P2  
F1/F2  
d
Feed Hole Pitch  
Hole Center to First Lead  
Hole Center to Component Center  
Lead Spread  
Lead Thickness  
L
Cut Lead Length  
L1  
t
0.209 (+0.051, -0.052)  
0.032 (+/- 0.006)  
0.021 (+/- 0.006)  
0.708 (+0.020, -0.019)  
0.236 (+/- 0.012)  
0.035 (max)  
Taped Lead Length  
Taped Lead Thickness  
Carrier Tape Thickness  
Carrier Tape Width  
t1  
W
TO-92 Reel  
Configuration: Figure 5.0  
Hold - down Tape Width  
Hold - down Tape position  
Feed Hole Position  
WO  
W1  
W2  
DO  
S
0.360 (+/- 0.025)  
0.157 (+0.008, -0.007)  
0.004 (max)  
Sprocket Hole Diameter  
Lead Spring Out  
Note : All dimensions are in inches.  
ELECTROSTATIC  
SENSITIVE DEVICES  
D4  
D1  
ITEM DESCRIPTION  
SYSMBOL MINIMUM  
MAXIMUM  
D2  
Reel Diameter  
D1  
D2  
D2  
D3  
D4  
W1  
W2  
W3  
13.975  
1.160  
0.650  
3.100  
2.700  
0.370  
1.630  
14.025  
1.200  
0.700  
3.300  
3.100  
0.570  
1.690  
2.090  
F63TNR Label  
Arbor Hole Diameter (Standard)  
(Small Hole)  
Customized Label  
Core Diameter  
Hub Recess Inner Diameter  
Hub Recess Depth  
Flange to Flange Inner Width  
Hub to Hub Center Width  
W1  
W3  
W2  
Note: All dimensions are inches  
D3  
July 1999, Rev. A  
TO-92 Package Dimensions  
TO-92 (FS PKG Code 92, 94, 96)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 0.1977  
January 2000, Rev. B  
©2000 Fairchild Semiconductor International  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  
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